Found: 21
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About the choice of auxiliary sources during the solution of the problem of diffraction of a point source field by a dielectric body.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 211, doi. 10.1134/S1064226916030116
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- Article
Diffraction of a plane wave by a multiserial lattice located in a dielectric layer.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 224, doi. 10.1134/S1064226916030104
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- Article
A vector model of wave propagation through an interface of dissipative media.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 234, doi. 10.1134/S1064226916030177
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- Article
Boundary-value problem for the adjoint Helmholtz equation.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 243, doi. 10.1134/S1064226916030141
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- Article
Amplitude-goniometric passive location of an emitting target in the nonstationary radio channel.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 246, doi. 10.1134/S1064226916030050
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- Article
Influence of the medium nonlinearity on the reflection of monochromatic and pulsed radiation.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 254, doi. 10.1134/S1064226916030244
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- Article
Tunneling of optical beams in a layered structure with a periodic variation in the refractive index.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 261, doi. 10.1134/S1064226916030037
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- Article
Generation in crossed fields under parametric variation in the magnetic field.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 267, doi. 10.1134/S1064226916030025
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- Article
Geometrized theory of plane electron beams and model of an electron-optical system of planar gyrotron.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 272, doi. 10.1134/S1064226916030190
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- Article
Wideband planar filters with an extended stopband.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 291, doi. 10.1134/S1064226916030220
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- Article
Device for nanoobject manipulation based on two-layer composite with shape memory.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 302, doi. 10.1134/S1064226916030086
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- Article
Analytical model used to calculate focal-plane-array parameters.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 311, doi. 10.1134/S106422691603013X
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- Article
Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 319, doi. 10.1134/S1064226916030207
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- Article
Focal plane arrays mesastructures formation by ion-beam etching.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 324, doi. 10.1134/S1064226916030153
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- Article
Influence of parameters of the semiconductor-dielectric interface on the current of the guard ring of silicon photodiodes.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 328, doi. 10.1134/S1064226916030074
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- Article
Investigation of the surface roughness of CdZnTe substrates by different techniques of nanometer accuracy.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 333, doi. 10.1134/S1064226916030062
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- Article
Analytical approach to selection of the optimum structure of avalanche heterophotodiodes based on direct bandgap semiconductors.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 338, doi. 10.1134/S1064226916030098
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- Article
Temperature dependence of diffusion length in MCT epitaxial layers.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 344, doi. 10.1134/S1064226916030128
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- Article
320 × 256 avalanche array photodetector on the basis of ternary alloys of the AB group with an InGaAs absorbing layer and an InAlAs barrier layer.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 348, doi. 10.1134/S1064226916030219
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- Article
Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 352, doi. 10.1134/S1064226916030165
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- Article
Characteristics of heteroepitaxial structures AlGaN for p- i- n diode focal plane arrays.
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- Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 358, doi. 10.1134/S1064226916030189
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- Article