Works matching IS 10637850 AND DT 2020 AND VI 46 AND IP 3


Results: 27
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    Thick Epitaxial α-Ga2O3:Sn Layers on a Patterned Sapphire Substrate.

    Published in:
    Technical Physics Letters, 2020, v. 46, n. 3, p. 228, doi. 10.1134/S106378502003013X
    By:
    • Nikolaev, V. I.;
    • Pechnikov, A. I.;
    • Guzilova, L. I.;
    • Chikiryaka, A. V.;
    • Shcheglov, M. P.;
    • Nikolaev, V. V.;
    • Stepanov, S. I.;
    • Vasil'ev, A. A.;
    • Shchemerov, I. V.;
    • Polyakov, A. Ya.
    Publication type:
    Article
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    Power Characteristics of GaN Microwave Transistors on Silicon Substrates.

    Published in:
    Technical Physics Letters, 2020, v. 46, n. 3, p. 211, doi. 10.1134/S1063785020030050
    By:
    • Chernykh, I. A.;
    • Romanovskiy, S. M.;
    • Andreev, A. A.;
    • Ezubchenko, I. S.;
    • Chernykh, M. Y.;
    • Grishchenko, J. V.;
    • Mayboroda, I. O.;
    • Korneev, S. V.;
    • Krymko, M. M.;
    • Zanaveskin, M. L.;
    • Sinkevich, V. F.
    Publication type:
    Article
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