Works matching IS 10637850 AND DT 1999 AND VI 25 AND IP 8
Results: 30
Use of high-purity Al[sub x]Ga[sub 1-x]As layers in epitaxial structures for high-power microwave field-effect transistors.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 595, doi. 10.1134/1.1262567
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Computer modeling of oxygen migration in HgBa[sub 2]CuO[sub 4+δ].
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 591, doi. 10.1134/1.1262565
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Catalytic plasma anodization of single-crystal 6H–SiC structures.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 593, doi. 10.1134/1.1262566
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High-power broad-band single-mode InGaAsP/InP superluminescent diode.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 598, doi. 10.1134/1.1262568
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Elastic properties of gallium and aluminum nitrides.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 601, doi. 10.1134/1.1262569
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Recombination of preadsorbed oxygen atoms at the surface of solids.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 603, doi. 10.1134/1.1262570
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Multiplication of runaway electrons in discharges with repeated fuel pellet injection.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 606, doi. 10.1134/1.1262571
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Characteristic time for the evolution of instability of a droplet charged to the Rayleigh limit.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 610, doi. 10.1134/1.1262572
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Energy distributions of electrons emitted from a diamond film under the action of a strong field.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 612, doi. 10.1134/1.1262573
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Investigation of profiles of implanted Ti atoms over the depth of boron nitride nanocrystalline ceramic exposed to high radiation doses and fluxes with subsequent annealing.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 615, doi. 10.1134/1.1262574
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Investigation of the entrainment of silicon atoms by “vacancies” formed in an aluminum melt when its surface is exposed to an ion–electron flux.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 618, doi. 10.1134/1.1262575
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Change in the properties of BT-23 titanium alloy induced by implantation of iron and zirconium ions followed by exposure to a low-energy high-current electron beam.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 621
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- Article
Formation of gas folds during pressing of Y[sub 1]Ba[sub 2]Cu[sub 3]O[sub 7-δ] powder.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 624, doi. 10.1134/1.1262577
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- Article
Dependence of the microwave surface resistance on the structure and thickness of superconducting cuprate films.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 626, doi. 10.1134/1.1262578
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Particle size distribution in a coagulating dusty plasma.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 630, doi. 10.1134/1.1262579
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Possibility of nonequilibrium phase transitions in semiconductors and semiconducting superstructures in crossed electric and magnetic fields.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 650
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Nature of hyperthermal surface ionization.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 635, doi. 10.1134/1.1262581
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Bifurcations in the trajectory problem as a cause of internal-time singularities and the onset of quantum (wave) chaos.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 637, doi. 10.1134/1.1262582
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Electrical properties of Schottky diodes using high-resistivity CdTe crystals.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 642, doi. 10.1134/1.1262583
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- Article
Anomalous backscattering of high-power laser radiation by the flat surface of a solid.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 645, doi. 10.1134/1.1262584
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Transition to classical behavior in mesoscopic magnetic systems and quantum decoherence.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 633, doi. 10.1134/1.1262580
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Zero-radius potential model for a planar waveguide in a photonic crystal.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 653, doi. 10.1134/1.1262586
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Observation of a long-range action effect in ion-bombarded GaAs transistor structures.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 655, doi. 10.1134/1.1262587
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Discrimination of acetone and ammonia vapor using an array of thin-film sensors of the same type.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 657, doi. 10.1134/1.1262588
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Annealing of aluminum–silicon-dioxide–silicon structures after α-particle bombardment.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 660, doi. 10.1134/1.1262589
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Control of chaos in nonautonomous systems with quasiperiodic excitation.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 662, doi. 10.1134/1.1262590
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Modulational method of eliminating the zero shift of a fiber ring interferometer induced by polarization nonreciprocity.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 668, doi. 10.1134/1.1262592
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Interaction of charged dust particles. Debye quasimolecule.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 670, doi. 10.1134/1.1262593
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Isolated concentration waves of point defects under pulsed laser irradiation.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 673, doi. 10.1134/1.1262594
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Information transmission using a synchronous chaotic response with filtering in the communication channel.
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- Technical Physics Letters, 1999, v. 25, n. 8, p. 665, doi. 10.1134/1.1262591
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