Works matching IS 10637850 AND DT 1999 AND VI 25 AND IP 4
Results: 32
YBa[sub 2]Cu[sub 3]O[sub x] Josephson junctions on a bicrystal sapphire substrate for devices in the millimeter and submillimeter wavelength ranges.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 249, doi. 10.1134/1.1262444
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Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 253, doi. 10.1134/1.1262443
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Optical limiting of laser radiation in dispersed liquid-crystal structures with fullerenes.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 257, doi. 10.1134/1.1262445
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Thermoelectrodynamic loss of material by a solid armature in a railgun as a cause of velocity limitation.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 260, doi. 10.1134/1.1262446
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Chemical potential of a binary solution.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 263, doi. 10.1134/1.1262447
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Flow in a turbulent supersonic boundary layer with a heat source.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 265, doi. 10.1134/1.1262448
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Hybrid “antenna–amplifier” relativistic traveling-wave tube using an azimuthally asymmetric mode of a rod slow-wave system.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 267, doi. 10.1134/1.1262440
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Turbulent diffusion of passive impurities.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 271, doi. 10.1134/1.1262449
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Anomalous phenomena.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 274, doi. 10.1134/1.1262450
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Influence of screening on calculations on the total energy of calcium oxide.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 278, doi. 10.1134/1.1262451
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Depth of penetration of microindenters in a metal target subjected to a fast powder flux.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 280, doi. 10.1134/1.1262452
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Extension of a model analysis of the degree of polarization of light.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 282, doi. 10.1134/1.1262453
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Scale invariance and the Gell-Mann–Low function of the conductance of a layer with an exponentially broad resistance spectrum.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 285, doi. 10.1134/1.1262454
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Losses in diamond in the millimeter range.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 288, doi. 10.1134/1.1262455
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Continuous optical discharge in a thermionic converter for conversion of laser radiation energy into electrical energy.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 290, doi. 10.1134/1.1262456
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Efficient lasing of a mixture of organic dyes at 610 and 670 nm.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 293, doi. 10.1134/1.1262457
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Theory of the undulator superradiance of an electron beam pulse in the group synchronism regime.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 296, doi. 10.1134/1.1262441
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Longitudinal chromatic aberration of an accelerating gap.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 300
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Influence of a thin layer with arbitrary conductivity on the characteristics of acoustic waves in potassium niobate.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 302, doi. 10.1134/1.1262459
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Photoluminescence of porous-silicon/diamondlike-carbon-film structures subjected to rapid thermal annealing.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 304, doi. 10.1134/1.1262460
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Autostochastic system of coupled microwave generators.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 307, doi. 10.1134/1.1262461
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Multiple-tip liquid-metal field emitter.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 310, doi. 10.1134/1.1262462
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Nature of the anomalous dispersion of particles in fullerite–alkali-metal-halide composites.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 313, doi. 10.1134/1.1262463
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Long-range gettering of microdefects in silicon single crystals during the formation of porous silicon layers on their surface and ion irradiation.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 315, doi. 10.1134/1.1262464
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Radiation effects in high-electron-mobility transistors.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 317, doi. 10.1134/1.1262465
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Effect of anodic etching of heavily doped silicon on the location of the plasma minimum.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 319, doi. 10.1134/1.1262442
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Investigation of a glow discharge in a mixture of Ar and OH.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 321
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Investigation of the electrochemical coupling coefficient of acoustic waves in thin potassium niobate plates.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 324, doi. 10.1134/1.1262467
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Gas-sensitive properties of copper-containing fullerene membranes.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 326, doi. 10.1134/1.1262468
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Photovoltaic properties of semiconductor-protein heterocontacts.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 328
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Optical properties of thin films of amorphous vanadium oxides.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 331, doi. 10.1134/1.1262470
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Influence of heating of the active region in InGaAsP/InP injection lasers on their spectral characteristics.
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- Technical Physics Letters, 1999, v. 25, n. 4, p. 334, doi. 10.1134/1.1262471
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