Works matching IS 10637850 AND DT 1998 AND VI 24 AND IP 6
Results: 33
Laser implantation of impurities in cadmium telluride crystals.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 411, doi. 10.1134/1.1262136
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Influence of the conditions of formation on the structure and phase composition of subsurface layers of uranium coated with the high-temperature oxide.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 414, doi. 10.1134/1.1262137
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On the thermal mechanism of microwave breakdown of high-temperature superconducting films.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 417, doi. 10.1134/1.1262138
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Phototransmittance involving bound excitons in GaP(N) and GaAs[sub 1-x]P[sub x](N).
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 419, doi. 10.1134/1.1262139
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- Article
Nonholonomic relation between the polarization state of light and the angle of twist of a single-mode optical fiber with linear birefringence.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 421, doi. 10.1134/1.1262140
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Experimental study of the temperature stability of magnetic field sensors based on Bi[sub 12]SiO[sub 20] crystals.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 423, doi. 10.1134/1.1262141
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Kinetic parameters in the case of two-dimensional phase transitions in an adsorbed layer.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 427, doi. 10.1134/1.1262142
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Negative differential conductance of quasi-one-dimensional contacts.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 430, doi. 10.1134/1.1262143
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On the nature of the surface phases formed on carbidized tungsten during field evaporation.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 432, doi. 10.1134/1.1262163
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A proposal to use reflection with delay for achieving the self-modulation and stochastic regimes in millimeter-wave gyrotrons.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 436, doi. 10.1134/1.1262164
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- Article
Electromagnetic showers in oriented garnet crystals.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 439, doi. 10.1134/1.1262165
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Modified layered composite with high anisotropy of the piezoconstants e[sub ij][sup *] and d[sub ij][sup *].
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 441, doi. 10.1134/1.1262168
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On the degradation of a shock wave in high-current radiating discharges in gases at atmospheric pressure.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 444, doi. 10.1134/1.1262166
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- Article
On the theory of space–time holography.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 446, doi. 10.1134/1.1262161
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- Article
Conducting microchannels in an ytterbium oxide insulating film.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 463, doi. 10.1134/1.1262147
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- Article
Influence of a finite azimuthal energy of surface anchoring on the Fréedericksz transition in droplets of a nematic liquid crystal with a bipolar structure.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 451, doi. 10.1134/1.1262167
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- Article
Extremal character of the change in the reverse current of silicon p[sup +]–n structures during the formation of nickel Ohmic contacts.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 455, doi. 10.1134/1.1262144
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Functional approach to the Rayleigh–Bénard problem for a nematic liquid crystal.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 457, doi. 10.1134/1.1262145
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- Article
Formation of magnetic nanosize gratings in the illumination of thin-film Fe–Cr mixtures by interfering laser beams.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 460, doi. 10.1134/1.1262146
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- Article
Structure of a weakly ionized gas-discharge plasma.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 448, doi. 10.1134/1.1262162
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- Article
Nonlinear dynamics of the free surface of a conducting liquid in an electric field.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 465, doi. 10.1134/1.1262148
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- Article
Growth of GaN by molecular-beam epitaxy with activation of the nitrogen by a capacitive rf magnetron discharge.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 467, doi. 10.1134/1.1262149
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Transverse hot-electron effects in semiconductors.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 470, doi. 10.1134/1.1262150
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Emissive characteristics of mesa-stripe lasers (λ=3.0–3.6 μm) made from InGaAsSb/InAsSbP double heterostructures.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 472, doi. 10.1134/1.1262151
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Features of the deformation of Ge–GaAs heterostructures under concentrated loads.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 475, doi. 10.1134/1.1262160
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Electroluminescence of quantum-well structures on type-II InAs/GaSb heterojunctions.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 477, doi. 10.1134/1.1262152
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The “zero” current and self-sustaining electron bunches in M-type devices.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 480, doi. 10.1134/1.1262153
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Optimization of the contrast, brightness, and modulation amplitude of light in electrooptic devices based on polymer-encapsulated ferroelectric liquid crystals.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 483, doi. 10.1134/1.1262154
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Modeling the energy profile of a shear in alloys with the D1a superstructure.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 485, doi. 10.1134/1.1262155
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Achieving a high sensitivity of measurements in optical systems for rewriting holograms by incoherent light.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 487, doi. 10.1134/1.1262156
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Displacement field and the aptness of models of the nonequilibrium ordering in III–V composites.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 489, doi. 10.1134/1.1262157
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Lifetimes of magnetopositronium in semiconductor quantum wells.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 492
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Langmuir–Blodgett films made from C[sub 60] fullerene with grafted macromolecules.
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- Technical Physics Letters, 1998, v. 24, n. 6, p. 495, doi. 10.1134/1.1262159
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- Article