Works matching IS 10637850 AND DT 1998 AND VI 24 AND IP 5
Results: 33
High-temperature diode formed by epitaxial GaP layers.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 329, doi. 10.1134/1.1262110
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Permittivity of strontium titanate film in a SrTiO[sub 3]/Al[sub 2]O[sub 3] structure.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 332, doi. 10.1134/1.1262111
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Observation of carbon segregation and evolution of vacancy defects in a surface layer of iron exposed to a low-energy high-current electron beam.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 334
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Maximum rate of transition between boiling regimes.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 338, doi. 10.1134/1.1262113
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Dynamic recrystallization in a near-eutectic Pb–Sn–Ag alloy under thermal cycling.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 341, doi. 10.1134/1.1262114
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Alternation of nonequilibrium carrier states in n-GaAs.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 343, doi. 10.1134/1.1262115
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Electron dynamics during laser neutralization of negative ions.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 346, doi. 10.1134/1.1262116
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New channels for mechanical twinning.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 348, doi. 10.1134/1.1262117
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Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 351, doi. 10.1134/1.1262118
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New method for measurement of the concentration of acceptor centers in photorefractive crystals.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 354, doi. 10.1134/1.1262119
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Mechanism for the anomalously long range of a “hard laminar flame”.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 357, doi. 10.1134/1.1262120
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Optical limitation effect in a cholesteric liquid crystal–fullerene system.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 359, doi. 10.1134/1.1262121
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Influence of substrate thickness on plasma resonance in a semiconductor heterostructure with a two-dimensional electron gas.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 361, doi. 10.1134/1.1262122
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Dielectric properties of triglycine sulfate crystals with a periodic stratified impurity distribution.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 363, doi. 10.1134/1.1262123
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Enhancement of the luminescence yield of Er[sup 3+] ions at λ=1.54μm in ZBLAN glass additionally doped with Eu[sup 3+] and Tb[sup 3+] and pumped in the range λ=0.975 μm.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 365, doi. 10.1134/1.1262124
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Influence of moisture on the properties of long streamers in air.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 367, doi. 10.1134/1.1262125
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Influence of the “matrix memory” effect on the photodecay of dye molecules adsorbed in porous glass.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 369, doi. 10.1134/1.1262126
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Interrelation between the resistance of Gunn diodes in weak electric fields and the characteristics of oscillators based on them.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 371, doi. 10.1134/1.1262127
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Influence of potassium and fluorine on the formation and properties of the high-temperature 2223 phase in a (Bi, Pb)-Sr-Ca-Cu-O system.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 374, doi. 10.1134/1.1262128
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Influence of a methane atmosphere on the temperature dependence of the conductivity of polycrystalline silicon films.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 377, doi. 10.1134/1.1262129
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A new method of producing thin films.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 379, doi. 10.1134/1.1262130
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Investigation of the structure of thin layers of hexadecane on a metal substrate by infrared spectroscopy.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 381
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Theory of internal thermal equilibrium in inhomogeneous structures.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 383, doi. 10.1134/1.1262132
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Mechanisms of photocurrent amplification in isotypic n[sup +]–GaSb–n[sup 0]–GaInAsSb–n[sup +]–GaAlAsSb heterostructures.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 386, doi. 10.1134/1.1262100
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Laws governing dilatational contrast transmission electron microscope images and the accuracy of models of nonequilibrium ordering in III–V compositions.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 400, doi. 10.1134/1.1262106
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Initial stages in the formation of a CsAu surface alloy.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 390
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New prospects for the development of short-wavelength x-ray holography.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 393, doi. 10.1134/1.1262103
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Relation between the plasticity index and the pseudopotential of covalent tetrahedral crystals.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 395, doi. 10.1134/1.1262104
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Quenching of photoconduction in semiconductors with pulsating recombination activity.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 398, doi. 10.1134/1.1262105
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A possible method of reducing the magnetic field in a relativistic backward-wave tube.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 388, doi. 10.1134/1.1262101
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Measurement and stabilization of the energy parameters of laser radiation using nonlinear optical effects1).
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 403, doi. 10.1134/1.1262107
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Interaction between relativistic charged particles and an extended strong rf field.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 405, doi. 10.1134/1.1262108
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Influence of nitrogen on the optical and mechanical properties of diamond-like carbon films.
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- Technical Physics Letters, 1998, v. 24, n. 5, p. 408, doi. 10.1134/1.1262109
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