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Laws governing the reaction of a system.
- Published in:
- Technical Physics Letters, 1998, v. 24, n. 10, p. 749, doi. 10.1134/1.1262253
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- Article
Modified method of plasma-enhanced chemical vapor deposition of nanocrystalline silicon.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 758, doi. 10.1134/1.1262256
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- Article
Investigation of plug extrusion processes in counterpropagating waves.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 747, doi. 10.1134/1.1262252
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- Article
Mechanism of field-enhanced self-sustaining secondary electron emission in porous dielectrics.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 752, doi. 10.1134/1.1262254
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- Article
Switching time of planar ferroelectric capacitors using strontium titanate and barium strontium titanate films.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 755, doi. 10.1134/1.1262255
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- Article
Decay dynamics of superheated states of liquid metals.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 760, doi. 10.1134/1.1262257
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- Article
Metal–insulator cathode in an rf electron gun.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 762, doi. 10.1134/1.1262258
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- Article
Chain mechanism for initiation of hydrocarbon oxidation reactions in a low-temperature plasma.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 764, doi. 10.1134/1.1262259
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- Article
Adhesion mechanism of friction in nanotribocontacts.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 766, doi. 10.1134/1.1262260
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- Article
Anisotropy of thin ferromagnetic films.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 769, doi. 10.1134/1.1262261
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- Article
A new class of electrostatic systems which keep plane homogeneous charged-particle beams exactly parallel.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 772, doi. 10.1134/1.1262262
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- Article
Preparation of thick YBa[sub 2]Cu[sub 3]O[sub 7-δ] films by dc magnetron sputtering.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 786, doi. 10.1134/1.1262268
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- Article
Modeling of a crossed-groove cavity in the 8 mm wavelength range.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 777, doi. 10.1134/1.1262264
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- Article
Retention time and memory mechanism in ferrite powders.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 780, doi. 10.1134/1.1262265
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- Article
On the generation of radiation defects by accelerated ions in silicon.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 793, doi. 10.1134/1.1262271
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- Article
Preparation and investigation of films of (Zn[sub 1-x]Cd[sub x])[sub 3](P[sub 1-y]As[sub y])[sub 2] solid solutions.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 784, doi. 10.1134/1.1262267
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- Article
Formation of macroparticle structures in an rf induction discharge plasma.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 774, doi. 10.1134/1.1262263
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- Article
Physical model for shock-wave initiation of detonation in pressed fine crystalline explosives.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 789, doi. 10.1134/1.1262269
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- Article
Active microwave pulse compressor utilizing an axisymmetric mode of a circular waveguide.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 791, doi. 10.1134/1.1262270
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- Article
Hydrogen-induced phase transition in barium cerate.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 782, doi. 10.1134/1.1262266
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- Article
Features of the emission spectrum of relativistic electrons moving in an ultraintense laser field.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 797, doi. 10.1134/1.1262272
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- Article
Observation of self-modulation regimes of generation in high-power backward-wave tubes.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 816, doi. 10.1134/1.1262278
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- Article
Investigation of the characteristics of an ionization–neutron calorimeter in 4–70 GeV hadron beams at the IHEP accelerator.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 803, doi. 10.1134/1.1262274
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- Article
Experiments on interferometric enhanced scattering in a plasma with a nonuniform magnetic field.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 806, doi. 10.1134/1.1262275
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- Article
Apparatus for growing GaN films on large-area substrates by the method of chloride–hydride vapor-phase epitaxy.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 813, doi. 10.1134/1.1262277
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Study of the surface of diamondlike carbon films doped with copper.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 800, doi. 10.1134/1.1262273
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- Article
Influence of a shock-wave pressure gradient on the appearance of a microhardness maximum in α-Fe irradiated by a high-power ion beam.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 819, doi. 10.1134/1.1262279
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- Article
On the epitaxy of aluminum nitride on silicon substrates in a chloride–hydride process.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 810, doi. 10.1134/1.1262276
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Monitoring the deposition of an interference film by differential reflection of light.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 822, doi. 10.1134/1.1262280
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- Article
Spin–orbit interaction in the field of an optical vortex of a few-mode fiber.
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- Technical Physics Letters, 1998, v. 24, n. 10, p. 826, doi. 10.1134/1.1262281
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- Article