Electronic Properties of α-graphyne Nanoribbon with Vacancies.
- Published in:
- Semiconductors, 2024, v. 58, n. 8, p. 651, doi. 10.1134/S1063782624601043
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 8
Results: 7
1
2
Gate Length Influence on the Strain of the AlGaN Barrier Layer under the Gate in AlGaN/AlN/GaN HFETs at Different Temperatures.
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- Semiconductors, 2024, v. 58, n. 8, p. 645, doi. 10.1134/S1063782624601572
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- Article
3
Investigation of Enhancement-Mode AlGaN/GaN MIS-HEMT with Recessed Gate Structure.
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- Semiconductors, 2024, v. 58, n. 8, p. 637, doi. 10.1134/S1063782624600967
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- Article
4
The Influence of Ag Metal Thickness on Barrier Height in Ag/n-CdSe Schottky Diodes.
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- Semiconductors, 2024, v. 58, n. 8, p. 631, doi. 10.1134/S1063782624600694
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- Article
5
Effect of Thermal Treatment on the Structure, Microstructure and Magnetic Properties of Co-precipitated CoFe<sub>2</sub>O<sub>4</sub> Nanoparticles.
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- Semiconductors, 2024, v. 58, n. 8, p. 620, doi. 10.1134/S1063782624601493
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- Publication type:
- Article
6
An Environmentally Friendly Synthesis of Mn-doped ZnO Nanoparticles and its Enhanced Antibacterial, Electrochemical and Photocatalytic behaviors: Effect of Doping Concentration.
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- Semiconductors, 2024, v. 58, n. 8, p. 611, doi. 10.1134/S1063782624601298
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- Article
7
Improving the Texturization of n-Type c-Si Absorbers using Sodium Hypochlorite (NaOCl) as an Additional Component in the Standard Solution Containing a Mixture of IPA and KOH.
- Published in:
- Semiconductors, 2024, v. 58, n. 8, p. 603, doi. 10.1134/S1063782624600700
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- Publication type:
- Article