Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 7
Results: 7
Effect of Temperature and Magnetic Field on Electron Mobility in SiGe/Si/SiGe–layer Structures.
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- Semiconductors, 2024, v. 58, n. 7, p. 597, doi. 10.1134/S1063782624601341
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- Article
Study on the Effects of Precursor Concentration and Annealing Process of In<sub>2</sub>O<sub>3</sub> thin Films Prepared by Sol-gel Method.
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- Semiconductors, 2024, v. 58, n. 7, p. 585, doi. 10.1134/S1063782624600840
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- Article
Nonlinear Transmission and Photoluminescence of Colloidal Solutions of Indium-Selenide-Based Nanocrystals.
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- Semiconductors, 2024, v. 58, n. 7, p. 580, doi. 10.1134/S1063782624601365
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- Article
Strained Germanium Microbridge LED Array Using Elliptical Windows Etching.
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- Semiconductors, 2024, v. 58, n. 7, p. 571, doi. 10.1134/S1063782624601249
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- Article
Dynamic and Photoluminescence Behavior of Nanocrystallites and Bulk Porous Silicon Texture.
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- Semiconductors, 2024, v. 58, n. 7, p. 565, doi. 10.1134/S1063782624601195
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- Article
VO<sub>2</sub>-based Terahertz Metamaterial Devices Switchable between Absorption and Transmission.
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- Semiconductors, 2024, v. 58, n. 7, p. 558, doi. 10.1134/S1063782624601419
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- Article
Performance Characterization and Analytical Modelling of Electrostatic Doped Heterostructure Nanotube Tunnel Field Effect Transistor.
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- Semiconductors, 2024, v. 58, n. 7, p. 547, doi. 10.1134/S1063782624601377
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- Article