Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 5

Results: 17

Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 479, doi. 10.1134/S1063782624050178
By:
- Zhuravlev, M. N.;
- Egorkin, V. I.
Publication type:
Article
Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 473, doi. 10.1134/S1063782624050166
By:
- Zholudev, M. S.;
- Kozlov, D. V.;
- Morozov, S. V.
Publication type:
Article
Analysis of Stability of Generation in Quantum Well Lasers.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 464, doi. 10.1134/S1063782624050154
By:
- Sokolova, Z. N.;
- Asryan, L. V.
Publication type:
Article
Polar Optical Phonons in Superlattices Si/SiO2.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 457, doi. 10.1134/S1063782624050142
By:
- Smirnov, M. B.;
- Grigorieva, N. R.;
- Pankin, D. V.;
- Roginskii, E. M.;
- Savin, A. V.
Publication type:
Article
MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 451, doi. 10.1134/S1063782624050130
By:
- Samartsev, I. V.;
- Zvonkov, B. N.;
- Baidus, N. V.;
- Chigineva, A. B.;
- Zhidyaev, K. S.;
- Dikareva, N. V.;
- Zdoroveyshchev, A. V.;
- Rykov, A. V.;
- Plankina, S. M.;
- Nezhdanov, A. V.;
- Ershov, A. V.
Publication type:
Article
Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 445, doi. 10.1134/S1063782624050129
By:
- Pivovarova, A. A.;
- Vinskaya, N. D.;
- Kunitsyna, E. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 436, doi. 10.1134/S1063782624050117
By:
- Lyubutin, S. K.;
- Patrakov, V. E.;
- Rukin, S. N.;
- Slovikovsky, B. G.;
- Tsyranov, S. N.
Publication type:
Article
Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 433, doi. 10.1134/S1063782624050105
By:
- Lebedev, A. A.;
- Sakharov, A. V.;
- Kozlovski, V. V.;
- Malevsky, D. A.;
- Nikolaev, A. E.;
- Levinshtein, M. E.
Publication type:
Article
Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 429, doi. 10.1134/S1063782624050099
By:
- Kononov, A. A.;
- Ilinskiy, A. V.;
- Castro, R. A.;
- Klimov, V. A.;
- Pashkevich, M. E.;
- Popova, I. O.;
- Shadrin, E. B.
Publication type:
Article
Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 422, doi. 10.1134/S1063782624050087
By:
- Komkov, O. S.;
- Yakushev, M. V.
Publication type:
Article
Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 413, doi. 10.1134/S1063782624050075
By:
- Kocharovskaya, E. R.;
- Kocharovsky, Vl. V.
Publication type:
Article
Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 409, doi. 10.1134/S1063782624050063
By:
- Kharitonova, P. G.;
- Glukhovskoy, E. G.;
- Kozlowski, A. V.;
- Stetsyura, S. V.
Publication type:
Article
Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 406, doi. 10.1134/S1063782624050051
By:
- Filosofov, N. G.;
- Budkin, G. V.;
- Agekyan, V. F.;
- Karczewski, G.;
- Serov, A. Yu.;
- Verbin, S. Yu.;
- Shtrom, I. V.;
- Reznitsky, A. N.
Publication type:
Article
Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 401, doi. 10.1134/S106378262405004X
By:
- Davydov, S. Yu.;
- Lebedev, A. A.
Publication type:
Article
Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 393, doi. 10.1134/S1063782624050038
By:
- Chukeev, M. A.;
- Khramtsov, E. S.;
- Zheng, Shiming;
- Ignatiev, I. V.;
- Eliseev, S. A.;
- Efimov, Yu. P.
Publication type:
Article
Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1).
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 386, doi. 10.1134/S1063782624050026
By:
- Bokhan, P. A.;
- Zhuravlev, K. S.;
- Zakrevsky, D. E.;
- Malin, T. V.;
- Fateev, N. V.
Publication type:
Article
Luminescence in p–i–n Structures with Compensated Quantum Wells.
Published in:
Semiconductors, 2024, v. 58, n. 5, p. 375, doi. 10.1134/S1063782624050014
By:
- Adamov, R. B.;
- Melentev, G. A.;
- Podoskin, A. A.;
- Kondratov, M. I.;
- Grishin, A. E.;
- Slipchenko, S. O.;
- Sedova, I. V.;
- Sorokin, S. V.;
- Klimko, G. V.;
- Makhov, I. S.;
- Firsov, D. A.;
- Shalygin, V. A.
Publication type:
Article

Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 5

Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate.

Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe.

Analysis of Stability of Generation in Quantum Well Lasers.

Polar Optical Phonons in Superlattices Si/SiO<sub>2</sub>.

MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current.

Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures.

Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode.

Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes.

Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor.

Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures.

Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity.

Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate.

Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers.

Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model.

Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation.

Mechanisms of Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si Structures (x = 0.56–1).

Luminescence in p–i–n Structures with Compensated Quantum Wells.