Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 5

Results: 17

Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 479, doi. 10.1134/S1063782624050178

By:

Zhuravlev, M. N.;
Egorkin, V. I.

Publication type:

Article

Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 473, doi. 10.1134/S1063782624050166

By:

Zholudev, M. S.;
Kozlov, D. V.;
Morozov, S. V.

Publication type:

Article

Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 433, doi. 10.1134/S1063782624050105

By:

Lebedev, A. A.;
Sakharov, A. V.;
Kozlovski, V. V.;
Malevsky, D. A.;
Nikolaev, A. E.;
Levinshtein, M. E.

Publication type:

Article

Polar Optical Phonons in Superlattices Si/SiO2.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 457, doi. 10.1134/S1063782624050142

By:

Smirnov, M. B.;
Grigorieva, N. R.;
Pankin, D. V.;
Roginskii, E. M.;
Savin, A. V.

Publication type:

Article

MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 451, doi. 10.1134/S1063782624050130

By:

Samartsev, I. V.;
Zvonkov, B. N.;
Baidus, N. V.;
Chigineva, A. B.;
Zhidyaev, K. S.;
Dikareva, N. V.;
Zdoroveyshchev, A. V.;
Rykov, A. V.;
Plankina, S. M.;
Nezhdanov, A. V.;
Ershov, A. V.

Publication type:

Article

Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 445, doi. 10.1134/S1063782624050129

By:

Pivovarova, A. A.;
Vinskaya, N. D.;
Kunitsyna, E. V.;
Yakovlev, Yu. P.

Publication type:

Article

Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 436, doi. 10.1134/S1063782624050117

By:

Lyubutin, S. K.;
Patrakov, V. E.;
Rukin, S. N.;
Slovikovsky, B. G.;
Tsyranov, S. N.

Publication type:

Article

Analysis of Stability of Generation in Quantum Well Lasers.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 464, doi. 10.1134/S1063782624050154

By:

Sokolova, Z. N.;
Asryan, L. V.

Publication type:

Article

Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 429, doi. 10.1134/S1063782624050099

By:

Kononov, A. A.;
Ilinskiy, A. V.;
Castro, R. A.;
Klimov, V. A.;
Pashkevich, M. E.;
Popova, I. O.;
Shadrin, E. B.

Publication type:

Article

Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 422, doi. 10.1134/S1063782624050087

By:

Komkov, O. S.;
Yakushev, M. V.

Publication type:

Article

Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 413, doi. 10.1134/S1063782624050075

By:

Kocharovskaya, E. R.;
Kocharovsky, Vl. V.

Publication type:

Article

Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 409, doi. 10.1134/S1063782624050063

By:

Kharitonova, P. G.;
Glukhovskoy, E. G.;
Kozlowski, A. V.;
Stetsyura, S. V.

Publication type:

Article

Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 406, doi. 10.1134/S1063782624050051

By:

Filosofov, N. G.;
Budkin, G. V.;
Agekyan, V. F.;
Karczewski, G.;
Serov, A. Yu.;
Verbin, S. Yu.;
Shtrom, I. V.;
Reznitsky, A. N.

Publication type:

Article

Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 401, doi. 10.1134/S106378262405004X

By:

Davydov, S. Yu.;
Lebedev, A. A.

Publication type:

Article

Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 393, doi. 10.1134/S1063782624050038

By:

Chukeev, M. A.;
Khramtsov, E. S.;
Zheng, Shiming;
Ignatiev, I. V.;
Eliseev, S. A.;
Efimov, Yu. P.

Publication type:

Article

Mechanisms of Optical Gain in Heavily Doped AlxGa1 –xN:Si Structures (x = 0.56–1).

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 386, doi. 10.1134/S1063782624050026

By:

Bokhan, P. A.;
Zhuravlev, K. S.;
Zakrevsky, D. E.;
Malin, T. V.;
Fateev, N. V.

Publication type:

Article

Luminescence in p–i–n Structures with Compensated Quantum Wells.

Published in:

Semiconductors, 2024, v. 58, n. 5, p. 375, doi. 10.1134/S1063782624050014

By:

Adamov, R. B.;
Melentev, G. A.;
Podoskin, A. A.;
Kondratov, M. I.;
Grishin, A. E.;
Slipchenko, S. O.;
Sedova, I. V.;
Sorokin, S. V.;
Klimko, G. V.;
Makhov, I. S.;
Firsov, D. A.;
Shalygin, V. A.

Publication type:

Article

Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 5

Field p-Channel Transistors Based on GaN/AlN/GaN Heterostructures on a Silicon Substrate.

Calculation of Resonant States for Double Coulomb Acceptor in Narrow-Gap HgCdTe.

Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes.

Polar Optical Phonons in Superlattices Si/SiO<sub>2</sub>.

MOCVD Growth of InGaAs Metamorphic Heterostructures for Photodiodes with Low Dark Current.

Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures.

Spatial Inhomogeneity of Impact-Ionization Switching Process in Power Si Diode.

Analysis of Stability of Generation in Quantum Well Lasers.

Features of the Phase Transition in Thin Films of AgI Superionic Semiconductor.

Photomodulation Optical Spectroscopy of CdHgTe Graded Band Gap Heterostructures.

Structure and Self-Modulation Features of the Superradiant States in Asymmetric Fabry–Perot Cavity.

Photoelectric Characteristics and Surface Morphology of Cadmium Sulfide Modified by Iron Arachinate.

Photoluminescence of CdTe/CdMnTe and CdTe/CdMgTe Heterostructures with Quantum Wells Separated by Thick Barriers.

Effect of Adsorbed Macromolecule on the Carriers Mobility in Single Layer Graphene: Dangling Bonds Model.

Effect of Electric Field on Excitons in a Quantum Well under Additional Optical Excitation.

Mechanisms of Optical Gain in Heavily Doped Al<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N:Si Structures (x = 0.56–1).

Luminescence in p–i–n Structures with Compensated Quantum Wells.