Fabrication and Study of the Properties of GaAs Layers Doped with Bismuth.
- Published in:
- Semiconductors, 2024, v. 58, n. 4, p. 368, doi. 10.1134/S1063782624040171
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- Article
Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 4
Results: 17
1
2
Defects in GaInAsBi Epitaxial Films on Si(001) Substrates.
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- Semiconductors, 2024, v. 58, n. 4, p. 339, doi. 10.1134/S1063782624040110
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- Article
3
Ge/Si(001) Heteroepitaxial Layers Doped in the HW CVD Process by Impurity Evaporation from a Sublimating Ge Source.
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- Semiconductors, 2024, v. 58, n. 4, p. 358, doi. 10.1134/S1063782624040158
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- Article
4
Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs.
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- Semiconductors, 2024, v. 58, n. 4, p. 354, doi. 10.1134/S1063782624040146
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- Article
5
Current Generation in Pd/InP Structures in Hydrogen Medium.
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- Semiconductors, 2024, v. 58, n. 4, p. 349, doi. 10.1134/S1063782624040134
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- Article
6
Photoluminescence of Arsenic Doped Epitaxial Films of Cd<sub>0.3</sub>Hg<sub>0.7</sub>Te.
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- Semiconductors, 2024, v. 58, n. 4, p. 345, doi. 10.1134/S1063782624040122
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- Article
7
Study of the Possibility to Increase Annual Electricity Production Using Silicon Solar Cells with a Nanostructured Surface.
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- Semiconductors, 2024, v. 58, n. 4, p. 364, doi. 10.1134/S106378262404016X
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- Article
8
Formation of Bound States and Control of Their Localization in a Double Quantum Dot at the Edge of the Two-Dimensional Topological Insulator with Magnetic Barriers.
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- Semiconductors, 2024, v. 58, n. 4, p. 335, doi. 10.1134/S1063782624040109
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- Publication type:
- Article
9
Transport Characteristics Calculation of Bilayer Graphene with Different Misorientation Angle.
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- Semiconductors, 2024, v. 58, n. 4, p. 331, doi. 10.1134/S1063782624040092
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- Article
10
Formation of Single and Heterostructured Nanowires Based on InAs<sub>1 –</sub><sub>x</sub>P<sub>x</sub> Solid Solutions on Si(111).
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- Semiconductors, 2024, v. 58, n. 4, p. 327, doi. 10.1134/S1063782624040080
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- Article
11
Dislocation Structure of AlN/SiC Templates Grown by Sublimation.
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- Semiconductors, 2024, v. 58, n. 4, p. 323, doi. 10.1134/S1063782624040079
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- Article
12
Luminescence Characteristics of Chromium-Doped by High-Temperature Diffusion CVD-ZnSe.
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- Semiconductors, 2024, v. 58, n. 4, p. 315, doi. 10.1134/S1063782624040067
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- Article
13
Terahertz Radiation Sources with an Active Region Based on Super-Multiperiod AlGaAs/GaAs Superlattices.
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- Semiconductors, 2024, v. 58, n. 4, p. 310, doi. 10.1134/S1063782624040055
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- Publication type:
- Article
14
Change in Stoichiometry of ZnS Nanoparticles from the Energy of Action to Nano- and Femtosecond Laser Radiation.
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- Semiconductors, 2024, v. 58, n. 4, p. 306, doi. 10.1134/S1063782624040043
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- Publication type:
- Article
15
Surface Morphology of AlN Layers Grown on a Nano-Structured SiN<sub>x</sub>/Si(100) Template.
- Published in:
- Semiconductors, 2024, v. 58, n. 4, p. 302, doi. 10.1134/S1063782624040031
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- Article
16
Finding the Wedge-Shaped Au Nanoclusters at the Surface of GaAs and Investigating Them with the Polarization Spectroscopy of Plasmons.
- Published in:
- Semiconductors, 2024, v. 58, n. 4, p. 295, doi. 10.1134/S106378262404002X
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- Publication type:
- Article
17
Triboelectric Generation by Friction of Heavily Doped Diamond Probes on a p-Si Surface.
- Published in:
- Semiconductors, 2024, v. 58, n. 4, p. 289, doi. 10.1134/S1063782624040018
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- Publication type:
- Article