Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 3

Results: 17

Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 284, doi. 10.1134/S1063782624030175

By:

Tsyplenkov, V. V.;
Zhukavin, R. Kh.;
Shastin, V. N.

Publication type:

Article

Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3by Atomic and Molecular Ions.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 279, doi. 10.1134/S1063782624030163

By:

Struchkov, A. I.;
Karabeshkin, K. V.;
Karaseov, P. A.;
Titov, A. I.

Publication type:

Article

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 273, doi. 10.1134/S1063782624030151

By:

Snigirev, L. A.;
Bert, N. A.;
Preobrazhenskii, V. V.;
Putyato, M. A.;
Semyagin, B. R.;
Chaldyshev, V. V.

Publication type:

Article

High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 267, doi. 10.1134/S106378262403014X

By:

Slipchenko, S. O.;
Podoskin, A. A.;
Shushkanov, I. V.;
Krychkov, V. A.;
Rizaev, A. E.;
Kondratov, M. I.;
Grishin, A. E.;
Pikhtin, N. A.;
Bagaev, T. A.;
Svetogorov, V. N.;
Ladugin, M. A.;
Marmalyuk, A. A.;
Simakov, V. A.

Publication type:

Article

Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 263, doi. 10.1134/S1063782624030138

By:

Salii, R. A.;
Mintairov, S. A.;
Nadtochiy, A. M.;
Kalyuzhnyy, N. A.

Publication type:

Article

The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 254, doi. 10.1134/S1063782624030126

By:

Protasov, D. Yu.;
Kamesh, P. P.;
Svit, K. A.;
Dmitriev, D. V.;
Makeeva, A. A.;
Rzaev, E. M.;
Zhuravlev, K. S.

Publication type:

Article

Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 250, doi. 10.1134/S1063782624030114

By:

Permyakova, O. O.;
Rogozhin, A. E.;
Myagonkikh, A. V.;
Rudenko, K. V.

Publication type:

Article

Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 244, doi. 10.1134/S1063782624030102

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Salii, R. A.;
Nadtochiy, A. M.;
Kalyuzhnyy, N. A.

Publication type:

Article

Magnetic Minibands in Superlattices Based on the Semi-Dirac Crystals.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 241, doi. 10.1134/S1063782624030096

By:

Kryuchkov, S. V.;
Kukhar, E. I.;
Kotelnikov, E. Yu.

Publication type:

Article

Features of InP on Si Nanowire Growth.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 238, doi. 10.1134/S1063782624030084

By:

Karlina, L. B.;
Vlasov, A. S.;
Ilkiv, I. V.;
Vershinin, A. V.;
Soshnikov, I. P.

Publication type:

Article

Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 231, doi. 10.1134/S1063782624030072

By:

Kalinnikov, M. A.;
Lobanov, D. N.;
Kudryavtsev, K. E.;
Andreev, B. A.;
Yunin, P. A.;
Krasilnikova, L. V.;
Novikov, A. V.;
Skorokhodov, E. V.;
Skorokhodov, Z. F.

Publication type:

Article

Formation of Channel Silicon to Create Filter Layers.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 227, doi. 10.1134/S1063782624030060

By:

Ivlev, K. E.;
Bolotov, V. V.;
Ponomareva, I. V.;
Knyazev, E. V.

Publication type:

Article

Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 222, doi. 10.1134/S1063782624030059

By:

Ilkiv, I. V.;
Lendyashova, V. V.;
Borodin, B. B.;
Talalaev, V. G.;
Shugabaev, T.;
Reznik, R. R.;
Cirlin, G. E.

Publication type:

Article

Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 214, doi. 10.1134/S1063782624030047

By:

Bykov, A. A.;
Nomokonov, D. V.;
Strygin, I. S.;
Marchishin, I. V.;
Bakarov, A. K.

Publication type:

Article

Top-Down Formation of Biocompatible SiC Nanotubes.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 209, doi. 10.1134/S1063782624030035

By:

Bouravleuv, A. D.;
Kazakin, A. N.;
Nashchekina, Yu. A.;
Nashchekin, A. V.;
Ubyyvovk, E. V.;
Astrahanceva, V. A.;
Osipov, A. V.;
Svyatec, G. V.;
Kukushkin, S. A.

Publication type:

Article

Multi-Phonon Relaxation of the 1s(T2) Triplet of Neutral Magnesium Donors in Silicon.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 202, doi. 10.1134/S1063782624030023

By:

Bekin, N. A.;
Zhukavin, R. Kh.;
Tsyplenkov, V. V.;
Shastin, V. N.

Publication type:

Article

Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 197, doi. 10.1134/S1063782624030011

By:

Aleksandrov, O. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 3

Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.

Analysis of Individual Collision Cascade Parameters during Irradiation of Ga<sub>2</sub>O<sub>3</sub>by Atomic and Molecular Ions.

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.

High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures.

Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs.

The Electrochemical Profiling of n<sup>+</sup>/n GaAs Structures for Field-Effect Transistors.

Low Resistance State Degradation during Endurance Measurements in HfO<sub>2</sub>/HfO<sub>X</sub>N<sub>Y</sub>-Based Structures.

Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.

Magnetic Minibands in Superlattices Based on the Semi-Dirac Crystals.

Features of InP on Si Nanowire Growth.

Features of Formation of In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation.

Formation of Channel Silicon to Create Filter Layers.

Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them.

Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping.

Top-Down Formation of Biocompatible SiC Nanotubes.

Multi-Phonon Relaxation of the 1s(T<sub>2</sub>) Triplet of Neutral Magnesium Donors in Silicon.

Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release.