Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 3

Results: 17

Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 284, doi. 10.1134/S1063782624030175
By:
- Tsyplenkov, V. V.;
- Zhukavin, R. Kh.;
- Shastin, V. N.
Publication type:
Article
Analysis of Individual Collision Cascade Parameters during Irradiation of Ga2O3by Atomic and Molecular Ions.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 279, doi. 10.1134/S1063782624030163
By:
- Struchkov, A. I.;
- Karabeshkin, K. V.;
- Karaseov, P. A.;
- Titov, A. I.
Publication type:
Article
Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 273, doi. 10.1134/S1063782624030151
By:
- Snigirev, L. A.;
- Bert, N. A.;
- Preobrazhenskii, V. V.;
- Putyato, M. A.;
- Semyagin, B. R.;
- Chaldyshev, V. V.
Publication type:
Article
High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 267, doi. 10.1134/S106378262403014X
By:
- Slipchenko, S. O.;
- Podoskin, A. A.;
- Shushkanov, I. V.;
- Krychkov, V. A.;
- Rizaev, A. E.;
- Kondratov, M. I.;
- Grishin, A. E.;
- Pikhtin, N. A.;
- Bagaev, T. A.;
- Svetogorov, V. N.;
- Ladugin, M. A.;
- Marmalyuk, A. A.;
- Simakov, V. A.
Publication type:
Article
Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 263, doi. 10.1134/S1063782624030138
By:
- Salii, R. A.;
- Mintairov, S. A.;
- Nadtochiy, A. M.;
- Kalyuzhnyy, N. A.
Publication type:
Article
The Electrochemical Profiling of n+/n GaAs Structures for Field-Effect Transistors.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 254, doi. 10.1134/S1063782624030126
By:
- Protasov, D. Yu.;
- Kamesh, P. P.;
- Svit, K. A.;
- Dmitriev, D. V.;
- Makeeva, A. A.;
- Rzaev, E. M.;
- Zhuravlev, K. S.
Publication type:
Article
Low Resistance State Degradation during Endurance Measurements in HfO2/HfOXNY-Based Structures.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 250, doi. 10.1134/S1063782624030114
By:
- Permyakova, O. O.;
- Rogozhin, A. E.;
- Myagonkikh, A. V.;
- Rudenko, K. V.
Publication type:
Article
Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 244, doi. 10.1134/S1063782624030102
By:
- Mintairov, M. A.;
- Evstropov, V. V.;
- Mintairov, S. A.;
- Salii, R. A.;
- Nadtochiy, A. M.;
- Kalyuzhnyy, N. A.
Publication type:
Article
Magnetic Minibands in Superlattices Based on the Semi-Dirac Crystals.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 241, doi. 10.1134/S1063782624030096
By:
- Kryuchkov, S. V.;
- Kukhar, E. I.;
- Kotelnikov, E. Yu.
Publication type:
Article
Features of InP on Si Nanowire Growth.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 238, doi. 10.1134/S1063782624030084
By:
- Karlina, L. B.;
- Vlasov, A. S.;
- Ilkiv, I. V.;
- Vershinin, A. V.;
- Soshnikov, I. P.
Publication type:
Article
Features of Formation of InxGa1 –xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 231, doi. 10.1134/S1063782624030072
By:
- Kalinnikov, M. A.;
- Lobanov, D. N.;
- Kudryavtsev, K. E.;
- Andreev, B. A.;
- Yunin, P. A.;
- Krasilnikova, L. V.;
- Novikov, A. V.;
- Skorokhodov, E. V.;
- Skorokhodov, Z. F.
Publication type:
Article
Formation of Channel Silicon to Create Filter Layers.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 227, doi. 10.1134/S1063782624030060
By:
- Ivlev, K. E.;
- Bolotov, V. V.;
- Ponomareva, I. V.;
- Knyazev, E. V.
Publication type:
Article
Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 222, doi. 10.1134/S1063782624030059
By:
- Ilkiv, I. V.;
- Lendyashova, V. V.;
- Borodin, B. B.;
- Talalaev, V. G.;
- Shugabaev, T.;
- Reznik, R. R.;
- Cirlin, G. E.
Publication type:
Article
Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 214, doi. 10.1134/S1063782624030047
By:
- Bykov, A. A.;
- Nomokonov, D. V.;
- Strygin, I. S.;
- Marchishin, I. V.;
- Bakarov, A. K.
Publication type:
Article
Top-Down Formation of Biocompatible SiC Nanotubes.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 209, doi. 10.1134/S1063782624030035
By:
- Bouravleuv, A. D.;
- Kazakin, A. N.;
- Nashchekina, Yu. A.;
- Nashchekin, A. V.;
- Ubyyvovk, E. V.;
- Astrahanceva, V. A.;
- Osipov, A. V.;
- Svyatec, G. V.;
- Kukushkin, S. A.
Publication type:
Article
Multi-Phonon Relaxation of the 1s(T2) Triplet of Neutral Magnesium Donors in Silicon.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 202, doi. 10.1134/S1063782624030023
By:
- Bekin, N. A.;
- Zhukavin, R. Kh.;
- Tsyplenkov, V. V.;
- Shastin, V. N.
Publication type:
Article
Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release.
Published in:
Semiconductors, 2024, v. 58, n. 3, p. 197, doi. 10.1134/S1063782624030011
By:
- Aleksandrov, O. V.
Publication type:
Article

Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 3

Optical Excitation of Spin-Triplet States of Two-Electron Donors in Silicon.

Analysis of Individual Collision Cascade Parameters during Irradiation of Ga<sub>2</sub>O<sub>3</sub>by Atomic and Molecular Ions.

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs.

High-Current Low-Voltage Switches for Nanosecond Pulse Durations Based on Thyristor (Al)GaAs/GaAs Homo- and Heterostructures.

Epitaxial Heterostructures of the Active Region for Near-Infrared LEDs.

The Electrochemical Profiling of n<sup>+</sup>/n GaAs Structures for Field-Effect Transistors.

Low Resistance State Degradation during Endurance Measurements in HfO<sub>2</sub>/HfO<sub>X</sub>N<sub>Y</sub>-Based Structures.

Effect of Temperature on Current Through Various Recombination Channels in GaAs Solar Cells with GalnAs Quantum Dots.

Magnetic Minibands in Superlattices Based on the Semi-Dirac Crystals.

Features of InP on Si Nanowire Growth.

Features of Formation of In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation.

Formation of Channel Silicon to Create Filter Layers.

Formation of InAs Nanoislands on Silicon Surfaces and Heterostructures Based on Them.

Two-Subband Magnetotransport in GaAs Single Quantum Well with Superlattice Doping.

Top-Down Formation of Biocompatible SiC Nanotubes.

Multi-Phonon Relaxation of the 1s(T<sub>2</sub>) Triplet of Neutral Magnesium Donors in Silicon.

Model of Breakdown of MOS-Structures by the Mechanism of Anode Hydrogen Release.