Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 13

Results: 15

Normally off GaN Transistor for a Complementary Pair.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1132, doi. 10.1134/S1063782624700179
By:
- Egorkin, V. I.;
- Chukanova, O. B.
Publication type:
Article
On the Temperature Characteristics of Noise Diodes.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1128, doi. 10.1134/S1063782624700167
By:
- Zenevich, A. O.;
- Kochergina, O. V.;
- Buslyuk, V. V.;
- Fedosyuk, D. N.;
- Luschiy, D. A.
Publication type:
Article
Calculation of the Efficiency of a Photodiode with Generation and Recombination in the Space-Charge Region.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1120, doi. 10.1134/S1063782624700155
By:
- Saurov, M. A.;
- Lakalin, A. V.;
- Putrya, M. G.
Publication type:
Article
Influence of Pulse Power on the Parameters of Film Absorbing Elements.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1114, doi. 10.1134/S1063782624700143
By:
- Pilkevich, A. V.;
- Sadkov, V. D.
Publication type:
Article
On the Laser Formation of Suspended Graphene Channels of Photodetectors.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1109, doi. 10.1134/S1063782624700131
By:
- Nekrasov, N. P.;
- Murashko, D. T.;
- Vasilevsky, P. N.;
- Gerasimenko, A. Yu.;
- Nevolin, V. K.;
- Bobrinetskiy, I. I.
Publication type:
Article
On the Formation of TiO2–ZnO Composite Layers with Increased Photosensitivity by Electrophoretic Deposition.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1104, doi. 10.1134/S106378262470012X
By:
- Pak, K. I.;
- Sorokina, L. I.;
- Kuzmin, A. V.;
- Ryazanov, R. M.;
- Kitsyuk, E. P.;
- Dubkov, S. V.;
- Gromov, D. G.
Publication type:
Article
Comparison of Silicon and Silicon-Dioxide Sputtering by a Focused Ion Beam.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1097, doi. 10.1134/S1063782624700118
By:
- Rumyantsev, A. V.;
- Borgardt, N. I.
Publication type:
Article
Transmission Electron Microscopy Study of the Structure of GaAs Layers in GaAs/Ge/GaAs Heterostructures.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1089, doi. 10.1134/S1063782624700106
By:
- Sazonov, V. A.;
- Borgardt, N. I.;
- Prikhodko, A. S.;
- Kazakov, I. P.;
- Klekovkin, A. V.
Publication type:
Article
Effect of Electron Injection and Temperature on the Gas Sensitivity of Diamond-Graphite Film Structures to Water Vapor.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1084, doi. 10.1134/S106378262470009X
By:
- Skripal, A. V.;
- Trunilin, N. A.;
- Yafarov, R. K.
Publication type:
Article
Peculiarities of the Impact of a Helium Ion Beam on an Intercalated Graphite Film.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1077, doi. 10.1134/S1063782624700088
By:
- Khamdokhov, Z. M.;
- Margushev, Z. Ch.;
- Kalazhokov, Z. Kh.;
- Kalazhokov, Kh. Kh.;
- Kushkhov, Kh. B.;
- Teshev, R. Sh.
Publication type:
Article
On the Crystallization of Ge2Sb2Te5 Thin Films Using a Thin-Film Resistive-Heating Element for Creating Optoelectronic and Integrated-Optical Elements and Devices on Their Basis.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1070, doi. 10.1134/S1063782624700076
By:
- Glukhenkaya, V. B.;
- Pestov, G. N.;
- Gulidova, A. I.;
- Saurov, M. A.;
- Smirnov, P. A.;
- Fedyanina, M. E.;
- Kozlov, A. O.;
- Savitskiy, A. I.
Publication type:
Article
Study of the Concentration and Mobility of Carriers in Nanostructured PbTe- and GeTe-Based Thermoelectric Materials.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1064, doi. 10.1134/S1063782624700064
By:
- Pepelyaev, D. V.;
- Korchagin, E. P.;
- Shtern, M. Yu.;
- Rogachev, M. S.;
- Terekhov, D. Yu.;
- Bursin, S. B.;
- Shtern, Yu. I.;
- Sherchenkov, A. A.
Publication type:
Article
On the Creation of Molybdenum-Oxide-Based Layers for Semiconductor Gas Sensors.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1060, doi. 10.1134/S1063782624700052
By:
- Nalimova, S. S.;
- Shomakhov, Z. V.;
- Moshnikov, V. A.
Publication type:
Article
Electronic Structure of Bismuth Ferromanganite BiFe0.5Mn0.5O3.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1054, doi. 10.1134/S1063782624700040
By:
- Baglov, A. V.;
- Khoroshko, L. S.;
- Silibin, M. V.;
- Karpinsky, D. V.
Publication type:
Article
Study of p–i–n Diode Structures on High-Resistivity Silicon Substrates Using Deep-Level Transient Spectroscopy.
Published in:
Semiconductors, 2024, v. 58, n. 13, p. 1049, doi. 10.1134/S1063782624700039
By:
- Grigoreva, T. V.;
- Golubkov, S. A.;
- Boiko, A. N.
Publication type:
Article

Works matching IS 10637826 AND DT 2024 AND VI 58 AND IP 13

Normally off GaN Transistor for a Complementary Pair.

On the Temperature Characteristics of Noise Diodes.

Calculation of the Efficiency of a Photodiode with Generation and Recombination in the Space-Charge Region.

Influence of Pulse Power on the Parameters of Film Absorbing Elements.

On the Laser Formation of Suspended Graphene Channels of Photodetectors.

On the Formation of TiO<sub>2</sub>–ZnO Composite Layers with Increased Photosensitivity by Electrophoretic Deposition.

Comparison of Silicon and Silicon-Dioxide Sputtering by a Focused Ion Beam.

Transmission Electron Microscopy Study of the Structure of GaAs Layers in GaAs/Ge/GaAs Heterostructures.

Effect of Electron Injection and Temperature on the Gas Sensitivity of Diamond-Graphite Film Structures to Water Vapor.

Peculiarities of the Impact of a Helium Ion Beam on an Intercalated Graphite Film.

On the Crystallization of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Thin Films Using a Thin-Film Resistive-Heating Element for Creating Optoelectronic and Integrated-Optical Elements and Devices on Their Basis.

Study of the Concentration and Mobility of Carriers in Nanostructured PbTe- and GeTe-Based Thermoelectric Materials.

On the Creation of Molybdenum-Oxide-Based Layers for Semiconductor Gas Sensors.

Electronic Structure of Bismuth Ferromanganite BiFe<sub>0.5</sub>Mn<sub>0.5</sub>O<sub>3</sub>.

Study of p–i–n Diode Structures on High-Resistivity Silicon Substrates Using Deep-Level Transient Spectroscopy.