Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 5

Results: 8

Two-Dimensional Plasma Excitations in a Random Array of Quantum Antidots.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 272, doi. 10.1134/S1063782623070199
By:
- Vasilyev, Yu. B.
Publication type:
Article
The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 268, doi. 10.1134/S1063782623070187
By:
- Sobolev, N. A.;
- Kalyadin, A. E.;
- Shtel'makh, K. F.;
- Shek, E. I.;
- Sakharov, V. I.;
- Serenkov, I. T.
Publication type:
Article
Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 263, doi. 10.1134/S1063782623070163
By:
- Semakova, A. A.;
- Ruzhevich, M. S.;
- Romanov, V. V.;
- Bazhenov, N. L.;
- Mynbaev, K. D.;
- Moiseev, K. D.
Publication type:
Article
Study of Deposition of Al2O3 Nanolayers by Atomic Layer Deposition on the Structured ITO Films.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 257, doi. 10.1134/S1063782623070151
By:
- Markov, L. K.;
- Pavluchenko, A. S.;
- Smirnova, I. P.;
- Mesh, M. V.;
- Kolokolov, D. S.;
- Pushkarev, A. P.
Publication type:
Article
High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 252, doi. 10.1134/S106378262307014X
By:
- Malevskaya, A. V.;
- Kalyuzhnyy, N. A.;
- Mintairov, S. A.;
- Salii, R. A.;
- Malevskii, D. A.;
- Nakhimovich, M. V.;
- Larionov, V. R.;
- Pokrovskii, P. V.;
- Shvarts, M. Z.;
- Andreev, V. M.
Publication type:
Article
Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 244, doi. 10.1134/S1063782623070138
By:
- Lebedev, M. V.;
- Lvova, T. V.;
- Smirnov, A. N.;
- Davydov, V. Yu.;
- Koroleva, A. V.;
- Zhizhin, E. V.;
- Lebedev, S. V.
Publication type:
Article
Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 239, doi. 10.1134/S1063782623070126
By:
- Lebedev, A. A.;
- Kozlovski, V. V.;
- Levinshtein, M. E.;
- Malevsky, D. A.;
- Kuzmin, R. A.
Publication type:
Article
Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb1–xSnxTe with x ≥ 0.4.
Published in:
Semiconductors, 2023, v. 57, n. 5, p. 235, doi. 10.1134/S1063782623070114
By:
- Kaveev, A. K.;
- Tereshchenko, O. E.
Publication type:
Article

Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 5

Two-Dimensional Plasma Excitations in a Random Array of Quantum Antidots.

The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates.

Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement.

Study of Deposition of Al<sub>2</sub>O<sub>3</sub> Nanolayers by Atomic Layer Deposition on the Structured ITO Films.

High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces.

Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range.

Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb<sub>1–x</sub>Sn<sub>x</sub>Te with x ≥ 0.4.