Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 5

Results: 8

Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 263, doi. 10.1134/S1063782623070163

By:

Semakova, A. A.;
Ruzhevich, M. S.;
Romanov, V. V.;
Bazhenov, N. L.;
Mynbaev, K. D.;
Moiseev, K. D.

Publication type:

Article

Two-Dimensional Plasma Excitations in a Random Array of Quantum Antidots.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 272, doi. 10.1134/S1063782623070199

By:

Vasilyev, Yu. B.

Publication type:

Article

The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 268, doi. 10.1134/S1063782623070187

By:

Sobolev, N. A.;
Kalyadin, A. E.;
Shtel'makh, K. F.;
Shek, E. I.;
Sakharov, V. I.;
Serenkov, I. T.

Publication type:

Article

Study of Deposition of Al2O3 Nanolayers by Atomic Layer Deposition on the Structured ITO Films.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 257, doi. 10.1134/S1063782623070151

By:

Markov, L. K.;
Pavluchenko, A. S.;
Smirnova, I. P.;
Mesh, M. V.;
Kolokolov, D. S.;
Pushkarev, A. P.

Publication type:

Article

High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 252, doi. 10.1134/S106378262307014X

By:

Malevskaya, A. V.;
Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Salii, R. A.;
Malevskii, D. A.;
Nakhimovich, M. V.;
Larionov, V. R.;
Pokrovskii, P. V.;
Shvarts, M. Z.;
Andreev, V. M.

Publication type:

Article

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 244, doi. 10.1134/S1063782623070138

By:

Lebedev, M. V.;
Lvova, T. V.;
Smirnov, A. N.;
Davydov, V. Yu.;
Koroleva, A. V.;
Zhizhin, E. V.;
Lebedev, S. V.

Publication type:

Article

Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 239, doi. 10.1134/S1063782623070126

By:

Lebedev, A. A.;
Kozlovski, V. V.;
Levinshtein, M. E.;
Malevsky, D. A.;
Kuzmin, R. A.

Publication type:

Article

Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb1–xSnxTe with x ≥ 0.4.

Published in:

Semiconductors, 2023, v. 57, n. 5, p. 235, doi. 10.1134/S1063782623070114

By:

Kaveev, A. K.;
Tereshchenko, O. E.

Publication type:

Article

Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 5

Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement.

Two-Dimensional Plasma Excitations in a Random Array of Quantum Antidots.

The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates.

Study of Deposition of Al<sub>2</sub>O<sub>3</sub> Nanolayers by Atomic Layer Deposition on the Structured ITO Films.

High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors.

Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces.

Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range.

Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb<sub>1–x</sub>Sn<sub>x</sub>Te with x ≥ 0.4.