Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 3
Results: 7
Low Temperature Electrical Properties of CVD Graphene on LiNbO<sub>3</sub>: Acoustic Studies.
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- Semiconductors, 2023, v. 57, n. 3, p. 184, doi. 10.1134/S1063782623030077
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- Article
Front Contact to the GaSb-Photovoltaic Converter: Properties and Thermal Stability.
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- Semiconductors, 2023, v. 57, n. 3, p. 177, doi. 10.1134/S1063782623060180
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- Article
Temperature Dependence of Dislocation-Related Electroluminescence in Silicon Light-Emitting Diodes Containing Oxygen Precipitates.
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- Semiconductors, 2023, v. 57, n. 3, p. 172, doi. 10.1134/S1063782623060179
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- Article
Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors.
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- Semiconductors, 2023, v. 57, n. 3, p. 166, doi. 10.1134/S1063782623050159
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- Article
Gettering of Epitaxial Indium Arsenide by the Rare Earth Element Holmium.
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- Semiconductors, 2023, v. 57, n. 3, p. 160, doi. 10.1134/S1063782623060118
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- Article
Reduction of Misfit Dislocation Density in Metamorphic Heterostructures by Design Optimization of the Buffer Layer with Non-Linear Graded Composition Profile.
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- Semiconductors, 2023, v. 57, n. 3, p. 153, doi. 10.1134/S1063782623050032
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- Article
Initial Stages of Growth of the GaN(112) Layer on a Nano-structured Si(113) Substrate.
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- Semiconductors, 2023, v. 57, n. 3, p. 149, doi. 10.1134/S1063782623060040
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- Article