Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 2

Results: 9

Microstructure and Phase Composition of an Alloy of Iron and Chrome Disilicides.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 143, doi. 10.1134/S106378262303017X

By:

Suvorova, E. I.;
Solomkin, F. Yu.;
Arkharova, N. A.;
Sharenkova, N. V.;
Isachenko, G. N.

Publication type:

Article

Multiple Changes in the Electron-Phonon Interaction in Quantum Wells with Dielectrically Different Barriers.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 137, doi. 10.1134/S1063782623040115

By:

Maslov, A. Yu.;
Proshina, O. V.

Publication type:

Article

ODMR Active Bright Sintered Detonation Nanodiamonds Obtained Without Irradiation.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 130, doi. 10.1134/S1063782623020100

By:

Likhachev, K. V.;
Uchaev, M. V.;
Breev, I. D.;
Ankudinov, A. V.;
Babunts, R. A.;
Baranov, P. G.;
Kidalov, S. V.

Publication type:

Article

Effect of Proton Irradiation on the Properties of High-Voltage Integrated 4H-SiC Schottky Diodes at Operating Temperatures.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 125, doi. 10.1134/S1063782623030107

By:

Lebedev, A. A.;
Kozlovskii, V. V.;
Levinshtein, M. E.;
Malevskii, D. A.;
Oganesyan, G. A.

Publication type:

Article

Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 121, doi. 10.1134/S1063782623040103

By:

Lebedev, A. A.;
Davydov, V. Yu.;
Eliseev, I. A.;
Lebedev, S. P.;
Nikitina, I. P.;
Oganesyan, G. A.;
Smirnov, A. N.;
Shakhov, L. V.

Publication type:

Article

Light and Heavy Excitons in Strained CdTe/CdZnTe Quantum Wells.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 112, doi. 10.1134/S1063782623040097

By:

Kotova, L. V.;
Belova, D. D.;
Andre, R.;
Mariette, H.;
Kochereshko, V. P.

Publication type:

Article

Efficient Spin Generation in Graphene by Magnetic Proximity Effect Upon Absorption of Far-IR Radiation.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 104, doi. 10.1134/S1063782623020069

By:

Denisov, K. S.;
Golenitskii, K. Yu.

Publication type:

Article

Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 93, doi. 10.1134/S1063782623040012

By:

Babichev, A. V.;
Komarov, S. D.;
Tkach, Yu. S.;
Nevedomskiy, V. N.;
Blokhin, S. A.;
Kryzhanovskaya, N. V.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Novikov, I. I.

Publication type:

Article

Electron States of Atoms in Monolayers Adsorbed on Silicon Carbide.

Published in:

Semiconductors, 2023, v. 57, n. 2, p. 100, doi. 10.1134/S1063782623020057

By:

Davydov, S. Yu.;
Posrednik, O. V.

Publication type:

Article