Works matching IS 10637826 AND DT 2023 AND VI 57 AND IP 11

Results: 8

Internal Loss in Diode Lasers with Quantum Well-Dots.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 513, doi. 10.1134/S1063782623090191
By:
- Zhukov, A. E.;
- Nadtochiy, A. M.;
- Kryzhanovskaya, N. V.;
- Shernyakov, Yu. M.;
- Gordeev, N. Yu.;
- Serin, A. A.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Payusov, A. S.;
- Kornyshov, G. O.;
- Maximov, M. V.;
- Wang, Y.
Publication type:
Article
Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 508, doi. 10.1134/S106378262308016X
By:
- Timoshnev, S. N.;
- Benemanskaya, G. V.;
- Mizerov, A. M.;
- Sobolev, M. S.;
- Enns, Ya. B.
Publication type:
Article
Maximum Hopping Direct Current Conductivity via Hydrogen-like Impurities in Semiconductors.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 499, doi. 10.1134/S1063782623080158
By:
- Poklonski, N. A.;
- Vyrko, S. A.;
- Anikeev, I. I.;
- Zabrodskii, A. G.
Publication type:
Article
The Influence of the Waveguide Layer Composition on the Emission Parameters of 1550 nm InGaAs/InP Laser Heterostructures.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 492, doi. 10.1134/S1063782623080134
By:
- Novikov, I. I.;
- Nyapshaev, I. A.;
- Gladyshev, A. G.;
- Andryushkin, V. V.;
- Babichev, A. V.;
- Karachinsky, L. Yu.;
- Shernyakov, Yu. M.;
- Denisov, D. V.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. E.;
- Egorov, A. Yu.
Publication type:
Article
Temperature Dependencies of Radiative and Nonradiative Carrier Lifetimes in InGaAs Quantum Well-Dots.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 488, doi. 10.1134/S1063782623080110
By:
- Nadtochiy, A. M.;
- Melnichenko, I. A.;
- Ivanov, K. A.;
- Mintairov, S. A.;
- Kalyuzhnyy, N. A.;
- Maximov, M. V.;
- Kryzhanovskaya, N. V.;
- Zhukov, A. E.
Publication type:
Article
Growth of Hexagonal Boron Nitride (hBN) on Silicon Carbide Substrates by the Physical Vapor Transport Method.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 483, doi. 10.1134/S1063782623080092
By:
- Mokhov, E. N.;
- Davydov, V. Yu.;
- Smirnov, A. N.;
- Nagaluk, S. S.
Publication type:
Article
Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 474, doi. 10.1134/S106378262308002X
By:
- Babichev, A. V.;
- Pirogov, E. V.;
- Sobolev, M. S.;
- Denisov, D. V.;
- Fominykh, H. A.;
- Baranov, A. I.;
- Gudovskikh, A. S.;
- Melnichenko, I. A.;
- Yunin, P. A.;
- Nevedomsky, V. N.;
- Tokarev, M. V.;
- Ber, B. Ya.;
- Gladyshev, A. G.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Egorov, A. Yu.
Publication type:
Article
Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes.
Published in:
Semiconductors, 2023, v. 57, n. 11, p. 469, doi. 10.1134/S1063782623080018
By:
- Afanasev, A. V.;
- Zabrodskiy, V. V.;
- Ilyin, V. A.;
- Luchinin, V. V.;
- Nikolaev, A. V.;
- Serkov, A. V.;
- Trushlyakova, V. V.;
- Chigirev, D. A.
Publication type:
Article