Study of Triboelectric Charges in Thin Dielectric and Semiconductor Films by SPM Methods.
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- Semiconductors, 2022, v. 56, n. 6, p. 325, doi. 10.1134/S1063782622070028
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2022 AND VI 56 AND IP 6
Results: 8
1
2
Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms.
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- Semiconductors, 2022, v. 56, n. 6, p. 321, doi. 10.1134/S1063782622070016
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- Publication type:
- Article
3
A Model for Multiparametric Analysis of the Parameters of Short-Channel HEMT-Type Transistors.
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- Semiconductors, 2022, v. 56, n. 6, p. 346, doi. 10.1134/S1063782622070065
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- Publication type:
- Article
4
GaN Quantum-Dot Formation by a Temperature Increase in an Ammonia Flow.
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- Semiconductors, 2022, v. 56, n. 6, p. 340, doi. 10.1134/S1063782622070053
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- Publication type:
- Article
5
Polariton Resonance in the Self-Modulation of the Asymmetric State of a Superradiant Laser.
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- Semiconductors, 2022, v. 56, n. 6, p. 333, doi. 10.1134/S1063782622070041
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- Publication type:
- Article
6
Leakage Current through the Gate Dielectric in Transistors with Channel Lengths of up to 100 nm.
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- Semiconductors, 2022, v. 56, n. 6, p. 360, doi. 10.1134/S1063782622070089
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- Publication type:
- Article
7
Transformation of N-Polar Inversion Domains from AlN Buffer Layers during the Growth of AlGaN Layers.
- Published in:
- Semiconductors, 2022, v. 56, n. 6, p. 352, doi. 10.1134/S1063782622070077
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- Publication type:
- Article
8
Bimodality in the Electroluminescence Spectra of InGaAs Quantum Well–Dot Nanostructures.
- Published in:
- Semiconductors, 2022, v. 56, n. 6, p. 329, doi. 10.1134/S106378262207003X
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- Publication type:
- Article