Works matching IS 10637826 AND DT 2022 AND VI 56 AND IP 3

Results: 16

Comparison of Thin Films of Titanium Dioxide Deposited by Sputtering and Sol–Gel Methods for Waveguiding Applications.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 234, doi. 10.1134/S106378262106004X

By:

Brella, M.;
Taabouche, A.;
Gharbi, B.;
Gheriani, R.;
Bouachiba, Y.;
Bouabellou, A.;
Serrar, H.;
Touil, S.;
Laggoune, K.;
Boudissa, M.

Publication type:

Article

Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 230, doi. 10.1134/S1063782622020178

By:

Veis, A. N.;
Lukyanova, L. N.;
Usov, O. A.

Publication type:

Article

Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 223, doi. 10.1134/S1063782622020166

By:

Tyschenko, I. E.;
Spesivtsev, E. V.;
Shklyaev, A. A.;
Popov, V. P.

Publication type:

Article

Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 215, doi. 10.1134/S1063782622020154

By:

Tyschenko, I. E.;
Khmelnitsky, R. A.;
Saraykin, V. V.;
Volodin, V. A.;
Popov, V. P.

Publication type:

Article

The Effect of Neodymium(III) Ions on the Photoluminescence of Cadmium and Zinc Sulfides in a Polyacrylate Matrix.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 207, doi. 10.1134/S1063782622020130

By:

Smagin, V. P.;
Isaeva, A. A.;
Shelepova, E. A.

Publication type:

Article

Investigation of the Relationship between Mechanical Stresses, Optical Inhomogeneity, and the Oxygen Concentration in Germanium Crystals.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 201, doi. 10.1134/S1063782622020129

By:

Shimanskii, A. F.;
Kravtsova, E. D.;
Kulakovskaya, T. V.;
Grigorovich, A. P.;
Kopytkova, S. A.;
Smirnov, A. D.

Publication type:

Article

Scanning Tunneling Microscopy in (Bi, Sb)2(Te, Se, S)3 Chalcogenide Thermoelectrics.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 195, doi. 10.1134/S1063782622020105

By:

Lukyanova, L. N.;
Makarenko, I. V.;
Usov, O. A.

Publication type:

Article

Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 189, doi. 10.1134/S1063782622020099

By:

Lebedev, A. A.;
Kozlovski, V. V.;
Levinshtein, M. E.;
Malevsky, D. A.;
Oganesyan, G. A.;
Strel'chuk, A. M.;
Davydovskaya, K. S.

Publication type:

Article

Irradiation with Argon Ions of Cr/4H-SiC Photodetectors.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 184, doi. 10.1134/S1063782622020087

By:

Kalinina, E. V.;
Kudoyarov, M. F.;
Nikitina, I. P.;
Dementyeva, E. V.;
Zabrodskii, V. V.

Publication type:

Article

Synthesis and Thermoelectric Properties of an Sn1 – xPbxSb4Te8 Solid Solution Doped with Bismuth.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 180, doi. 10.1134/S1063782622020075

By:

Gurbanov, G. R.;
Adygezalova, M. B.

Publication type:

Article

The Effect of Synthesis and Heat Treatment Modes on the Local Structure of a Ge2Sb2Te5 Chalcogenide Semiconductor.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 175, doi. 10.1134/S1063782622020063

By:

Garibova, S. N.;
Isaev, A. I.;
Mekhtieva, S. I.;
Ataeva, S. U.;
Alekberov, R. I.

Publication type:

Article

Atomistic Simulation of the Lattice Properties of SnSe.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 169, doi. 10.1134/S1063782622020051

By:

Filanovich, A. N.;
Lysogorskiy, Y. V.;
Povzner, A. A.

Publication type:

Article

Anisotropic Stresses in GaN(11‒20) Layers on an r-Al2O3 Substrate during Hydride Vapor Phase Epitaxy.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 164, doi. 10.1134/S106378262202004X

By:

Bessolov, V. N.;
Konenkova, E. V.;
Seredova, N. V.;
Panteleev, V. N.;
Scheglov, M. E.

Publication type:

Article

The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 160, doi. 10.1134/S1063782622020038

By:

Aleksandrov, O. V.;
Tyapkin, N. S.;
Mokrushina, S. A.;
Fomin, V. N.

Publication type:

Article

Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 153, doi. 10.1134/S1063782622020026

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Zabegaev, D. N.;
Krivonosov, A. N.

Publication type:

Article

Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time.

Published in:

Semiconductors, 2022, v. 56, n. 3, p. 145, doi. 10.1134/S1063782622020014

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Zabegaev, D. N.;
Krivonosov, A. N.

Publication type:

Article

Works matching IS 10637826 AND DT 2022 AND VI 56 AND IP 3

Comparison of Thin Films of Titanium Dioxide Deposited by Sputtering and Sol–Gel Methods for Waveguiding Applications.

Optical Absorption Related to Interband and Intersubband Electron Transitions in Bismuth Telluride.

Structural Changes in Nanometer-Thick Silicon-on-Insulator Films During High-Temperature Annealing.

Diffusion of Germanium from a Buried SiO<sub>2</sub> Layer and Formation of a SiGe Phase.

The Effect of Neodymium(III) Ions on the Photoluminescence of Cadmium and Zinc Sulfides in a Polyacrylate Matrix.

Investigation of the Relationship between Mechanical Stresses, Optical Inhomogeneity, and the Oxygen Concentration in Germanium Crystals.

Scanning Tunneling Microscopy in (Bi, Sb)<sub>2</sub>(Te, Se, S)<sub>3</sub> Chalcogenide Thermoelectrics.

Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature.

Irradiation with Argon Ions of Cr/4H-SiC Photodetectors.

Synthesis and Thermoelectric Properties of an Sn<sub>1 – x</sub>Pb<sub>x</sub>Sb<sub>4</sub>Te<sub>8</sub> Solid Solution Doped with Bismuth.

The Effect of Synthesis and Heat Treatment Modes on the Local Structure of a Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Chalcogenide Semiconductor.

Atomistic Simulation of the Lattice Properties of SnSe.

Anisotropic Stresses in GaN(11‒20) Layers on an r-Al<sub>2</sub>O<sub>3</sub> Substrate during Hydride Vapor Phase Epitaxy.

The Effect of Ionizing Irradiation on the Charge Distribution and Breakdown of MOSFETs.

Transition from an Exponential to Linear Increase in the Energy Density of the Spectral Component of Picosecond Stimulated Emission by GaAs upon Gain Saturation.

Functional Dependences of the Maximum Energy Density of the Spectral Component of Stimulated Picosecond Emission by GaAs upon Gain Saturation. The Residual Characteristic Emission Relaxation Time.