Formation of Planar Field-Emission Devices Based on Carbon Nanotubes on Co–Nb–N–(O) Alloy.
- Published in:
- Semiconductors, 2022, v. 56, n. 13, p. 493, doi. 10.1134/S1063782622130164
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- Publication type:
- Article
Works matching IS 10637826 AND DT 2022 AND VI 56 AND IP 13
Results: 15
1
2
Simulation of Silicon Carbide Sputtering by a Focused Gallium Ion Beam.
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- Semiconductors, 2022, v. 56, n. 13, p. 487, doi. 10.1134/S1063782622130085
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- Article
3
Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review).
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- Semiconductors, 2022, v. 56, n. 13, p. 472, doi. 10.1134/S1063782622130024
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- Article
4
Electrophoretic Deposition of a Composite Electrode Material of a Supercapacitor Based on Few-Layer Graphite Nanoflakes and Ni(OH)<sub>2</sub>.
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- Semiconductors, 2022, v. 56, n. 13, p. 462, doi. 10.1134/S1063782622130036
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- Article
5
Optical Control of the Parameters of Substrates in Silicon-Carbide Epitaxial Structures.
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- Semiconductors, 2022, v. 56, n. 13, p. 455, doi. 10.1134/S1063782622130073
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- Article
6
X-Ray Photoelectron Spectroscopy of the Surface Layers of Faceted Zinc-Oxide Nanorods.
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- Semiconductors, 2022, v. 56, n. 13, p. 450, doi. 10.1134/S1063782622130097
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- Article
7
Focused-Ion-Beam Exposure of an Ultrathin Electron-Beam Resist for the Formation of Nanoscale Field-Effect Transistor Contacts.
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- Semiconductors, 2022, v. 56, n. 13, p. 444, doi. 10.1134/S1063782622130139
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- Article
8
Nanostructured Thermoelectric Materials for Temperatures of 200–1200 K Obtained by Spark Plasma Sintering.
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- Semiconductors, 2022, v. 56, n. 13, p. 437, doi. 10.1134/S1063782622130152
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- Article
9
Mechanical Stresses and Magnetic Properties of NiFe and CoNiFe Films Obtained by Electrochemical Deposition.
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- Semiconductors, 2022, v. 56, n. 13, p. 431, doi. 10.1134/S1063782622130115
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- Article
10
Modeling the Transport Properties of a 1D van der Waals Heterojunction Formed by a Carbon Nanotube and a MoS<sub>2</sub> Nanotube.
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- Semiconductors, 2022, v. 56, n. 13, p. 427, doi. 10.1134/S1063782622130127
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- Article
11
Electrically Conductive Carbon-Nanotube Framework Materials.
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- Semiconductors, 2022, v. 56, n. 13, p. 422, doi. 10.1134/S106378262213005X
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- Article
12
Simulation of the Dielectric Characteristics of Syntactic Materials.
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- Semiconductors, 2022, v. 56, n. 13, p. 416, doi. 10.1134/S1063782622130061
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- Article
13
Investigation of the Chemical Composition of Films Deposited by the Electric-Arc Sputtering of Graphite and Titanium from Two Sources.
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- Semiconductors, 2022, v. 56, n. 13, p. 411, doi. 10.1134/S1063782622130048
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- Article
14
Electronic Properties of Graphene Nanoribbons Doped with Pyrrole-Like Nitrogen.
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- Semiconductors, 2022, v. 56, n. 13, p. 406, doi. 10.1134/S1063782622130103
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- Article
15
Tensometric Studies of the Composition of Arsenic and Phosphorus Vapor.
- Published in:
- Semiconductors, 2022, v. 56, n. 13, p. 403, doi. 10.1134/S1063782622130140
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- Publication type:
- Article