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Results: 10

Quantum Transport in a Semiconductor Nanolayer Taking into Account the Surface Scattering of Carriers.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 755, doi. 10.1134/S1063782621090116
By:
- Kuznetsova, I. A.;
- Savenko, O. V.;
- Romanov, D. N.
Publication type:
Article
Surface Potential Modeling of DG SOI MoS2 FET (MFET) and Gate Misalignment Effect Analysis Therein.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 717, doi. 10.1134/S1063782621090037
By:
- Dwivedi, A. K.;
- Baliyan, T.;
- Tripathi, S.
Publication type:
Article
Method for Forming Films of the β-FeSi2 Phase by Pulsed Laser Deposition in Vacuum.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 749, doi. 10.1134/S1063782621090104
By:
- Kuznetsov, Yu. M.;
- Dorokhin, M. V.;
- Nezhdanov, A. V.;
- Zdoroveyshchev, D. A.;
- Lesnikov, V. P.;
- Mashin, A. I.
Publication type:
Article
Dependence of the Lasing Spectrum and Self-Mode Locking on the Photonic Band Gap in Class-C Heterolasers with Distributed Feedback of Waves in a Fabry—Perot Cavity.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 741, doi. 10.1134/S1063782621090098
By:
- Kocharovskaya, E. R.;
- Kukushkin, V. A.;
- Mishin, A. V.;
- Kocharovsky, Vl. V.;
- Kocharovsky, V. V.
Publication type:
Article
Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO2(Y) Films with Au Nanoparticles.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 731, doi. 10.1134/S1063782621090050
By:
- Filatov, D. O.;
- Shenina, M. E.;
- Rozhentsov, I. A.;
- Koryazhkina, M. N.;
- Novikov, A. S.;
- Antonov, I. N.;
- Ershov, A. V.;
- Gorshkov, A. P.;
- Gorshkov, O. N.
Publication type:
Article
Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 726, doi. 10.1134/S1063782621090049
By:
- Evdokimov, A. E.;
- Kuznetsova, M. S.;
- Mikhailov, A. V.;
- Kavokin, K. V.;
- Dzhioev, R. I.
Publication type:
Article
Electronic States and Persistent Currents in Rings with Inhomogeneous Rashba Spin–Orbit Coupling.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 764, doi. 10.1134/S106378262109013X
By:
- Maksimova, G. M.;
- Zainagutdinov, A. R.;
- Telezhnikov, A. V.
Publication type:
Article
Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 735, doi. 10.1134/S1063782621090062
By:
- Gaponenko, N. V.;
- Karnilava, Yu. D.;
- Lashkovskaya, E. I.;
- Zhivulko, V. D.;
- Mudryi, A. V.;
- Radyush, Yu. V.;
- Andreev, B. A.;
- Stepikhova, M. V.;
- Yablonskiy, A. N.;
- Gusev, S. A.;
- Subasri, R.;
- Reddy, D. S.
Publication type:
Article
Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 705, doi. 10.1134/S1063782621080200
By:
- Verkholetov, M. G.;
- Prudaev, I. A.
Publication type:
Article
Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells.
Published in:
Semiconductors, 2021, v. 55, n. 9, p. 710, doi. 10.1134/S1063782621080212
By:
- Vinnichenko, M. Ya.;
- Makhov, I. S.;
- Kharin, N. Yu.;
- Graf, S. V.;
- Panevin, V. Yu.;
- Sedova, I. V.;
- Sorokin, S. V.;
- Firsov, D. A.
Publication type:
Article

Quantum Transport in a Semiconductor Nanolayer Taking into Account the Surface Scattering of Carriers.

Surface Potential Modeling of DG SOI MoS<sub>2</sub> FET (MFET) and Gate Misalignment Effect Analysis Therein.

Method for Forming Films of the β-FeSi<sub>2</sub> Phase by Pulsed Laser Deposition in Vacuum.

Dependence of the Lasing Spectrum and Self-Mode Locking on the Photonic Band Gap in Class-C Heterolasers with Distributed Feedback of Waves in a Fabry—Perot Cavity.

Effect of Optical Illumination on Resistive Switching in MOS Structures Based on ZrO<sub>2</sub>(Y) Films with Au Nanoparticles.

Electron Spin Relaxation and Resonant Cooling of Nuclear Spins in GaAs:Mn Structures.

Electronic States and Persistent Currents in Rings with Inhomogeneous Rashba Spin–Orbit Coupling.

Radiative Properties of Up-Conversion Coatings Formed on the Basis of Erbium-Doped Barium Titanate Xerogels.

Effect of Barrier Contacts on Carrier Transport in Homogeneous GaAs Structures Doped with Deep Cr and EL2 Centers.

Photoconductivity and Infrared-Light Absorption in p-GaAs/AlGaAs Quantum Wells.