Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 2

Results: 21

Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 283, doi. 10.1134/S1063782621020032
By:
- Aghamaliyev, Z. A.
Publication type:
Article
Recent Developments in Semipolar InGaN Laser Diodes.
Published in:
2021
By:
- Das, Aparna
Publication type:
Literature Review
Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 262, doi. 10.1134/S1063782621020214
By:
- Yan, F.;
- Wang, Y.;
- Jin, X. L.;
- Peng, Y.;
- Luo, J.;
- Yang, J.
Publication type:
Article
TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 256, doi. 10.1134/S1063782621020159
By:
- Ivanov, P. A.;
- Lebedeva, N. M.
Publication type:
Article
Taking Account of the Substrate in Calculation of the Electrical Resistance of Microdisk Lasers.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 250, doi. 10.1134/S1063782621020226
By:
- Zhukov, A. E.;
- Kryzhanovskaya, N.V.;
- Moiseev, E. I.;
- Nadtochiy, A. M.;
- Maximov, M. V.;
- Dragunova, A. S.
Publication type:
Article
High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 243, doi. 10.1134/S1063782621020147
By:
- Ivanov, P. A.;
- Lebedeva, N. M.;
- Il'inskaya, N. D.;
- Kudoyarov, M. F.;
- Samsonova, T. P.;
- Kon'kov, O. I.;
- Zadiranov, Yu. M.
Publication type:
Article
Model Estimates of the Quantum Capacitance of Amorphous and Epitaxial Graphene-Like Compounds.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 234, doi. 10.1134/S1063782621020111
By:
- Davydov, S. Yu.
Publication type:
Article
Multicomponent Diamond-Like Semiconductors Based on the InBV–CdS System: Bulk and Surface Properties.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 228, doi. 10.1134/S1063782621020160
By:
- Kirovskaya, I. A.;
- Filatova, T. N.;
- Nor, P. E.
Publication type:
Article
Photoaccumulating Nanoheterostructures Based on Titanium Dioxide.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 219, doi. 10.1134/S1063782621020172
By:
- Konstantinova, E. A.;
- Zaitsev, V. B.;
- Kytina, E. V.;
- Marikutsa, A. V.
Publication type:
Article
Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 214, doi. 10.1134/S1063782621020123
By:
- Gazizulina, A. S.;
- Nasirov, A. A.;
- Nebesniy, A. A.;
- Parchinskiy, P. B.;
- Kim, Dojin
Publication type:
Article
The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 207, doi. 10.1134/S1063782621020068
By:
- Aleksandrov, O. V.
Publication type:
Article
Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 202, doi. 10.1134/S1063782621020184
By:
- Lachinov, A. A.;
- Karamov, D. D.;
- Lachinov, A. N.
Publication type:
Article
Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 194, doi. 10.1134/S1063782621020020
By:
- Abramkin, D. S.;
- Petrushkov, M. O.;
- Emelyanov, E. A.;
- Nenashev, A. V.;
- Yesin, M. Yu.;
- Vasev, A. V.;
- Putyato, M. A.;
- Bogomolov, D. B.;
- Gutakovskiy, A. K.;
- Preobrazhenskiy, V. V.
Publication type:
Article
Study of Alkali (Na,K)-Doped Cu2ZnSnS4 Thin Films Prepared by Sol–Gel Method.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 179, doi. 10.1134/S1063782621020135
By:
- Hosseinpour, R.;
- Izadifard, M.;
- Ghazi, M. E.
Publication type:
Article
Thermal Expansion and Thermal Conductivity of (In2S3)x(AgIn5S8)1 –x Alloys.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 133, doi. 10.1134/S1063782621020081
By:
- Bodnar, I. V.;
- Feshchenko, A. A.;
- Khoroshko, V. V.
Publication type:
Article
Molecular-Dynamics Study of Dimer Formation on a GaAs (001) Surface at Low Temperatures.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 175, doi. 10.1134/S1063782621020202
By:
- Prasolov, N. D.;
- Gutkin, A. A.;
- Brunkov, P. N.
Publication type:
Article
Amplification Lengths of Spectral Components of Intrinsic Stimulated Picosecond Emission. Dependence of the Characteristic Relaxation Time of These Components on Their Amplification Lengths. Relation Between Stimulated and Spontaneous Emission Spectra in GaAs
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 162, doi. 10.1134/S1063782621020044
By:
- Ageeva, N. N.;
- Bronevoi, I. L.;
- Zabegaev, D. N.;
- Krivonosov, A. N.
Publication type:
Article
Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 154, doi. 10.1134/S1063782621020056
By:
- Ageeva, N. N.;
- Bronevoi, I. L.;
- Zabegaev, D. N.;
- Krivonosov, A. N.
Publication type:
Article
Structural and Electronic Properties of ZnSiAs2, ZnSnAs2, and Their Mixed Crystals ZnSi1 –xSnxAs2.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 146, doi. 10.1134/S1063782621020196
By:
- Mecheri, B.;
- Meradji, H.;
- Ghemid, S.;
- Bendjeddou, H.;
- Boukhtouta, M.
Publication type:
Article
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 137, doi. 10.1134/S106378262102007X
By:
- Bagraev, N. T.;
- Kukushkin, S. A.;
- Osipov, A. V.;
- Romanov, V. V.;
- Klyachkin, L. E.;
- Malyarenko, A. M.;
- Khromov, V. S.
Publication type:
Article
Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films.
Published in:
Semiconductors, 2021, v. 55, n. 2, p. 168, doi. 10.1134/S1063782621020093
By:
- Borodavchenko, O. M.;
- Zhivulko, V. D.;
- Mudryí, A. V.;
- Yakushev, M. V.;
- Mogilnikov, I. A.
Publication type:
Article