Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 2

Results: 21

Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 283, doi. 10.1134/S1063782621020032

By:

Aghamaliyev, Z. A.

Publication type:

Article

Recent Developments in Semipolar InGaN Laser Diodes.

Published in:

2021

By:

Das, Aparna

Publication type:

Literature Review

Analysis and Measurement of Capacitance Characteristics of a Novel Light-Controlled Dual-Directional Gate Silicon-Controlled Rectifier.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 262, doi. 10.1134/S1063782621020214

By:

Yan, F.;
Wang, Y.;
Jin, X. L.;
Peng, Y.;
Luo, J.;
Yang, J.

Publication type:

Article

TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 256, doi. 10.1134/S1063782621020159

By:

Ivanov, P. A.;
Lebedeva, N. M.

Publication type:

Article

Taking Account of the Substrate in Calculation of the Electrical Resistance of Microdisk Lasers.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 250, doi. 10.1134/S1063782621020226

By:

Zhukov, A. E.;
Kryzhanovskaya, N.V.;
Moiseev, E. I.;
Nadtochiy, A. M.;
Maximov, M. V.;
Dragunova, A. S.

Publication type:

Article

High-Voltage 4H-SiC Schottky Diodes with Field-Plate Edge Termination.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 243, doi. 10.1134/S1063782621020147

By:

Ivanov, P. A.;
Lebedeva, N. M.;
Il'inskaya, N. D.;
Kudoyarov, M. F.;
Samsonova, T. P.;
Kon'kov, O. I.;
Zadiranov, Yu. M.

Publication type:

Article

Model Estimates of the Quantum Capacitance of Amorphous and Epitaxial Graphene-Like Compounds.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 234, doi. 10.1134/S1063782621020111

By:

Davydov, S. Yu.

Publication type:

Article

Effect of Carrier Heating by the GaAs Picosecond Stimulated Emission on Duration of Emission.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 154, doi. 10.1134/S1063782621020056

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Zabegaev, D. N.;
Krivonosov, A. N.

Publication type:

Article

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Crystal Silicon Surfaces.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 137, doi. 10.1134/S106378262102007X

By:

Bagraev, N. T.;
Kukushkin, S. A.;
Osipov, A. V.;
Romanov, V. V.;
Klyachkin, L. E.;
Malyarenko, A. M.;
Khromov, V. S.

Publication type:

Article

Radiative Recombination at Ion-Induced Defects in Cu(In,Ga)Se2 Alloy Thin Films.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 168, doi. 10.1134/S1063782621020093

By:

Borodavchenko, O. M.;
Zhivulko, V. D.;
Mudryí, A. V.;
Yakushev, M. V.;
Mogilnikov, I. A.

Publication type:

Article

Amplification Lengths of Spectral Components of Intrinsic Stimulated Picosecond Emission. Dependence of the Characteristic Relaxation Time of These Components on Their Amplification Lengths. Relation Between Stimulated and Spontaneous Emission Spectra in GaAs

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 162, doi. 10.1134/S1063782621020044

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Zabegaev, D. N.;
Krivonosov, A. N.

Publication type:

Article

Giant Magnetoresistance in a Metal–Organic Semiconductor–Metal Structure.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 202, doi. 10.1134/S1063782621020184

By:

Lachinov, A. A.;
Karamov, D. D.;
Lachinov, A. N.

Publication type:

Article

Multicomponent Diamond-Like Semiconductors Based on the InBV–CdS System: Bulk and Surface Properties.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 228, doi. 10.1134/S1063782621020160

By:

Kirovskaya, I. A.;
Filatova, T. N.;
Nor, P. E.

Publication type:

Article

Photoaccumulating Nanoheterostructures Based on Titanium Dioxide.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 219, doi. 10.1134/S1063782621020172

By:

Konstantinova, E. A.;
Zaitsev, V. B.;
Kytina, E. V.;
Marikutsa, A. V.

Publication type:

Article

Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 214, doi. 10.1134/S1063782621020123

By:

Gazizulina, A. S.;
Nasirov, A. A.;
Nebesniy, A. A.;
Parchinskiy, P. B.;
Kim, Dojin

Publication type:

Article

The Effect of the Ionizing Radiation Intensity on the Response of MOS Structures.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 207, doi. 10.1134/S1063782621020068

By:

Aleksandrov, O. V.

Publication type:

Article

Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 194, doi. 10.1134/S1063782621020020

By:

Abramkin, D. S.;
Petrushkov, M. O.;
Emelyanov, E. A.;
Nenashev, A. V.;
Yesin, M. Yu.;
Vasev, A. V.;
Putyato, M. A.;
Bogomolov, D. B.;
Gutakovskiy, A. K.;
Preobrazhenskiy, V. V.

Publication type:

Article

Study of Alkali (Na,K)-Doped Cu2ZnSnS4 Thin Films Prepared by Sol–Gel Method.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 179, doi. 10.1134/S1063782621020135

By:

Hosseinpour, R.;
Izadifard, M.;
Ghazi, M. E.

Publication type:

Article

Molecular-Dynamics Study of Dimer Formation on a GaAs (001) Surface at Low Temperatures.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 175, doi. 10.1134/S1063782621020202

By:

Prasolov, N. D.;
Gutkin, A. A.;
Brunkov, P. N.

Publication type:

Article

Thermal Expansion and Thermal Conductivity of (In2S3)x(AgIn5S8)1 –x Alloys.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 133, doi. 10.1134/S1063782621020081

By:

Bodnar, I. V.;
Feshchenko, A. A.;
Khoroshko, V. V.

Publication type:

Article

Structural and Electronic Properties of ZnSiAs2, ZnSnAs2, and Their Mixed Crystals ZnSi1 –xSnxAs2.

Published in:

Semiconductors, 2021, v. 55, n. 2, p. 146, doi. 10.1134/S1063782621020196

By:

Mecheri, B.;
Meradji, H.;
Ghemid, S.;
Bendjeddou, H.;
Boukhtouta, M.

Publication type:

Article