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Results: 11

Study of the Sensitivity of Porous SnO2-Based Thick-Film Elements to the Hydrogen Concentration in Air.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1063, doi. 10.1134/S1063782621130030
By:
- Amelichev, V. V.;
- Generalov, S. S.;
- Nikolaeva, A. V.;
- Polomoshnov, S. A.;
- Kovalev, V. A.;
- Kovalev, A. M.;
- Krivetskiy, V. V.
Publication type:
Article
Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1055, doi. 10.1134/S1063782621130029
By:
- Afanasev, A. V.;
- Ilyin, V. A.;
- Luchinin, V. V.;
- Reshanov, S. A.
Publication type:
Article
Investigation of the Dynamic Range of Silicon Photomultiplier Tubes.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1049, doi. 10.1134/S1063782621130121
By:
- Zenevich, A. O.;
- Kochergina, O. V.
Publication type:
Article
Analysis of Degradation Mechanisms of Gate Dielectrics Based on SiO2 in MOS Transistors.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1045, doi. 10.1134/S1063782621130054
By:
- Eliseeva, D. A.;
- Safonov, S. O.
Publication type:
Article
Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1039, doi. 10.1134/S1063782621130042
By:
- Egorkin, V. I.;
- Bespalov, V. A.;
- Zaitsev, A. A.;
- Zemlyakov, V. E.;
- Kapaev, V. V.;
- Kukhtyaeva, O. B.
Publication type:
Article
Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge2Sb2Te5 Layers Grown on Si(111) Substrates.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1033, doi. 10.1134/S106378262113011X
By:
- Zaytseva, Yu. S.;
- Borgardt, N. I.;
- Prikhodko, A. S.;
- Zallo, E.;
- Calarco, R.
Publication type:
Article
Prediction of Conditions for Chloride–Hydride Epitaxy of Ga1 – yInyAs1 – xPx Layers Isoperiodic with GaAs and GaAs1 – xPx.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1029, doi. 10.1134/S1063782621130091
By:
- Vigdorovich, E. N.
Publication type:
Article
Effect of Fullerene Encapsulation on Optical and Thermoelectrical Properties of Carbon Nanotubes.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1024, doi. 10.1134/S106378262113008X
By:
- Morozova, E. V.;
- Timkaeva, D. A.
Publication type:
Article
Prediction of the Effective Permittivity of Foam Polymer Materials.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1021, doi. 10.1134/S1063782621130078
By:
- Lavrov, I. V.;
- Bardushkin, V. V.;
- Yakovlev, V. B.;
- Bardushkin, A. V.
Publication type:
Article
Spin Valves in Microelectronics (A Review).
Published in:
2021
By:
- Iusipova, Iu. A.;
- Popov, A. I.
Publication type:
Literature Review
Method for Predicting the Effective Conductivity of Textured Polycrystals Taking Intergranular Gaps into Consideration.
Published in:
Semiconductors, 2021, v. 55, n. 13, p. 1003, doi. 10.1134/S1063782621130066
By:
- Lavrov, I. V.
Publication type:
Article

Study of the Sensitivity of Porous SnO<sub>2</sub>-Based Thick-Film Elements to the Hydrogen Concentration in Air.

Analysis of the Gas Phase Epitaxy of Silicon Carbide as a Basic Process for the Technology of Power Electronics.

Investigation of the Dynamic Range of Silicon Photomultiplier Tubes.

Analysis of Degradation Mechanisms of Gate Dielectrics Based on SiO<sub>2</sub> in MOS Transistors.

Normally-Off p-Gate Transistor Based on AlGaN/GaN Heterostructures.

Electron-Microscopy Studies of the Structure of Thin Epitaxial Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Layers Grown on Si(111) Substrates.

Prediction of Conditions for Chloride–Hydride Epitaxy of Ga<sub>1 – y</sub>In<sub>y</sub>As<sub>1 – x</sub>P<sub>x</sub> Layers Isoperiodic with GaAs and GaAs<sub>1 – x</sub>P<sub>x</sub>.

Effect of Fullerene Encapsulation on Optical and Thermoelectrical Properties of Carbon Nanotubes.

Prediction of the Effective Permittivity of Foam Polymer Materials.

Spin Valves in Microelectronics (A Review).

Method for Predicting the Effective Conductivity of Textured Polycrystals Taking Intergranular Gaps into Consideration.