Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 11

Results: 10

GaSb-Based Thermophotovoltaic Converters of IR Selective Emitter Radiation.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 840, doi. 10.1134/S1063782621100134

By:

Khvostikov, V. P.;
Sorokina, S. V.;
Khvostikova, O. A.;
Nakhimovich, M. V.;
Shvarts, M. Z.

Publication type:

Article

Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 835, doi. 10.1134/S1063782621100122

By:

Khanin, Yu. N.;
Vdovin, E. E.

Publication type:

Article

Model of a Terahertz Quantum-Cascade Laser Based on Two-Dimensional Plasmons.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 828, doi. 10.1134/S1063782621100092

By:

Dubinov, A. A.;
Aleshkin, V. Ya.

Publication type:

Article

Silicon-Doped GaSb Grown by MOVPE in a Wide Range of the V/III Ratio.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 850, doi. 10.1134/S1063782621100158

By:

Levin, R. V.;
Vlasov, A. S.;
Pushnyi, B. V.

Publication type:

Article

Sol–Gel Derived Photonic Crystals BaTiO3/SiO2.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 831, doi. 10.1134/S1063782621100110

By:

Gaponenko, N. V.;
Kholov, P. A.;
Karnilava, Yu. D.;
Lashkovskaya, E. I.;
Labunov, V. A.;
Martynov, I. L.;
Osipov, E. V.;
Chistyakov, A. A.;
Kargin, N. I.;
Raichenok, T. F.;
Tikhomirov, S. A.

Publication type:

Article

Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 844, doi. 10.1134/S1063782621100146

By:

Lebedev, M. V.;
Lvova, T. V.;
Smirnov, A. N.;
Davydov, V. Yu.

Publication type:

Article

Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 823, doi. 10.1134/S1063782621100080

By:

Dmitriev, D. V.;
Kolosovsky, D. A.;
Fedosenko, E. V.;
Toropov, A. I.;
Zhuravlev, K. S.

Publication type:

Article

Structural and Electrical Properties of PbS Films Doped with Cr3+ Ions during Chemical Deposition.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 855, doi. 10.1134/S106378262110016X

By:

Maskaeva, L. N.;
Mostovshchikova, E. V.;
Voronin, V. I.;
Pozdin, A. V.;
Selyanin, I. O.;
Anokhina, I. A.;
Markov, V. F.

Publication type:

Article

Transverse Nernst–Ettingshausen Effect in the Two–Dimensional Electron Gas of a Doubly Periodic Semiconductor Superlattice.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 869, doi. 10.1134/S1063782621100183

By:

Perov, A. A.;
Pikunov, P. V.

Publication type:

Article

Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide.

Published in:

Semiconductors, 2021, v. 55, n. 11, p. 865, doi. 10.1134/S1063782621100171

By:

Okhapkin, A. I.;
Kraev, S. A.;
Arkhipova, E. A.;
Daniltsev, V. M.;
Khrykin, O. I.;
Yunin, P. A.;
Drozdov, M. N.

Publication type:

Article

Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 11

GaSb-Based Thermophotovoltaic Converters of IR Selective Emitter Radiation.

Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures.

Model of a Terahertz Quantum-Cascade Laser Based on Two-Dimensional Plasmons.

Silicon-Doped GaSb Grown by MOVPE in a Wide Range of the V/III Ratio.

Sol–Gel Derived Photonic Crystals BaTiO<sub>3</sub>/SiO<sub>2</sub>.

Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions.

Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.

Structural and Electrical Properties of PbS Films Doped with Cr<sup>3+</sup> Ions during Chemical Deposition.

Transverse Nernst–Ettingshausen Effect in the Two–Dimensional Electron Gas of a Doubly Periodic Semiconductor Superlattice.

Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide.