Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 11

Results: 10

GaSb-Based Thermophotovoltaic Converters of IR Selective Emitter Radiation.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 840, doi. 10.1134/S1063782621100134
By:
- Khvostikov, V. P.;
- Sorokina, S. V.;
- Khvostikova, O. A.;
- Nakhimovich, M. V.;
- Shvarts, M. Z.
Publication type:
Article
Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 835, doi. 10.1134/S1063782621100122
By:
- Khanin, Yu. N.;
- Vdovin, E. E.
Publication type:
Article
Structural and Electrical Properties of PbS Films Doped with Cr3+ Ions during Chemical Deposition.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 855, doi. 10.1134/S106378262110016X
By:
- Maskaeva, L. N.;
- Mostovshchikova, E. V.;
- Voronin, V. I.;
- Pozdin, A. V.;
- Selyanin, I. O.;
- Anokhina, I. A.;
- Markov, V. F.
Publication type:
Article
Silicon-Doped GaSb Grown by MOVPE in a Wide Range of the V/III Ratio.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 850, doi. 10.1134/S1063782621100158
By:
- Levin, R. V.;
- Vlasov, A. S.;
- Pushnyi, B. V.
Publication type:
Article
Sol–Gel Derived Photonic Crystals BaTiO3/SiO2.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 831, doi. 10.1134/S1063782621100110
By:
- Gaponenko, N. V.;
- Kholov, P. A.;
- Karnilava, Yu. D.;
- Lashkovskaya, E. I.;
- Labunov, V. A.;
- Martynov, I. L.;
- Osipov, E. V.;
- Chistyakov, A. A.;
- Kargin, N. I.;
- Raichenok, T. F.;
- Tikhomirov, S. A.
Publication type:
Article
Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 844, doi. 10.1134/S1063782621100146
By:
- Lebedev, M. V.;
- Lvova, T. V.;
- Smirnov, A. N.;
- Davydov, V. Yu.
Publication type:
Article
Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 823, doi. 10.1134/S1063782621100080
By:
- Dmitriev, D. V.;
- Kolosovsky, D. A.;
- Fedosenko, E. V.;
- Toropov, A. I.;
- Zhuravlev, K. S.
Publication type:
Article
Model of a Terahertz Quantum-Cascade Laser Based on Two-Dimensional Plasmons.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 828, doi. 10.1134/S1063782621100092
By:
- Dubinov, A. A.;
- Aleshkin, V. Ya.
Publication type:
Article
Transverse Nernst–Ettingshausen Effect in the Two–Dimensional Electron Gas of a Doubly Periodic Semiconductor Superlattice.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 869, doi. 10.1134/S1063782621100183
By:
- Perov, A. A.;
- Pikunov, P. V.
Publication type:
Article
Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide.
Published in:
Semiconductors, 2021, v. 55, n. 11, p. 865, doi. 10.1134/S1063782621100171
By:
- Okhapkin, A. I.;
- Kraev, S. A.;
- Arkhipova, E. A.;
- Daniltsev, V. M.;
- Khrykin, O. I.;
- Yunin, P. A.;
- Drozdov, M. N.
Publication type:
Article

Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 11

GaSb-Based Thermophotovoltaic Converters of IR Selective Emitter Radiation.

Manifestations of Resonant-Tunneling Processes and Random Potential Fluctuations with the Participation of Quantum-Dot Levels in the Photocurrent Relaxation of p–i–n GaAs/AlAs Heterostructures.

Structural and Electrical Properties of PbS Films Doped with Cr<sup>3+</sup> Ions during Chemical Deposition.

Silicon-Doped GaSb Grown by MOVPE in a Wide Range of the V/III Ratio.

Sol–Gel Derived Photonic Crystals BaTiO<sub>3</sub>/SiO<sub>2</sub>.

Modification of the Electronic Properties of the n-InP (100) Surface with Sulfide Solutions.

Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux.

Model of a Terahertz Quantum-Cascade Laser Based on Two-Dimensional Plasmons.

Transverse Nernst–Ettingshausen Effect in the Two–Dimensional Electron Gas of a Doubly Periodic Semiconductor Superlattice.

Effect of the Chloropentafluoroethane Additive in Chlorine-Containing Plasma on the Etching Rate and Etching-Profile Characteristics of Gallium Arsenide.