Works matching IS 10637826 AND DT 2021 AND VI 55 AND IP 10

Results: 10

Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 816, doi. 10.1134/S1063782621100079

By:

Demir, I.;
Altuntas, I.;
Elagoz, S.

Publication type:

Article

Initial Stages of Growth of Semipolar AlN on a Nanopatterned Si(100) Substrate.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 812, doi. 10.1134/S1063782621100043

By:

Bessolov, V. N.;
Konenkova, E. V.;
Orlova, T. A.;
Rodin, S. N.

Publication type:

Article

Missing Understanding of the Phase Factor between Valence-Electron and Hole Operators.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 790, doi. 10.1134/S1063782621090190

By:

Shiau, Shiue-Yuan;
Combescot, Monique

Publication type:

Article

Generation of Terahertz Radiation in InP:Fe Crystals Due to Second-Order Lattice Nonlinearity.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 785, doi. 10.1134/S1063782621090189

By:

Rumyantsev, V. V.;
Maremyanin, K. V.;
Fokin, A. P.;
Dubinov, A. A.;
Razova, A. A.;
Mikhailov, N. N.;
Dvoretsky, S. A.;
Glyavin, M. Yu.;
Gavrilenko, V. I.;
Morozov, S. V.

Publication type:

Article

Intervalley Relaxation Processes of Shallow Donor States in Germanium.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 799, doi. 10.1134/S1063782621090232

By:

Tsyplenkov, V. V.;
Shastin, V. N.

Publication type:

Article

Formation of an Oxide Surface Layer and Its Influence on the Growth of Epitaxial Silicon Nanowires.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 771, doi. 10.1134/S1063782621090153

By:

Nebolsin, V. A.;
Swaikat, N. A.;
Vorobiev, A. Yu.;
Perepechina, T. A.;
Ozhogina, L. V.

Publication type:

Article

Specific Features of Structural Stresses in InGaN/GaN Nanowires.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 795, doi. 10.1134/S1063782621090207

By:

Soshnikov, I. P.;
Kotlyar, K. P.;
Reznik, R. R.;
Gridchin, V. O.;
Lendyashova, V. V.;
Vershinin, A. V.;
Lysak, V. V.;
Kirilenko, D. A.;
Bert, N. A.;
Cirlin, G. E.

Publication type:

Article

Modeling the Response of a Microwave Low-Barrier Uncooled Mott Diode to the Action of Heavy Ions of Outer Space and Femtosecond Laser Pulses.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 780, doi. 10.1134/S1063782621090177

By:

Puzanov, A. S.;
Bibikova, V. V.;
Zabavichev, I. Yu.;
Obolenskaya, E. S.;
Potekhin, A. A.;
Tarasova, E. A.;
Vostokov, N. V.;
Kozlov, V. A.;
Obolensky, S. V.

Publication type:

Article

Terahertz Stimulated Emission under the Optical Resonant Excitation of Germanium Doped with Shallow Donors.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 804, doi. 10.1134/S1063782621090244

By:

Zhukavin, R. Kh.

Publication type:

Article

Atomic Structure and Optical Properties of CaSi<sub>2</sub> Layers Grown on CaF<sub>2</sub>/Si Substrates.

Published in:

Semiconductors, 2021, v. 55, n. 10, p. 808, doi. 10.1134/S1063782621090268

By:

Zinovyev, V. A.;
Kacyuba, A. V.;
Volodin, V. A.;
Zinovieva, A. F.;
Cherkova, S. G.;
Smagina, Zh. V.;
Dvurechenskii, A. V.;
Krupin, A. Y.;
Borodavchenko, O. M.;
Zhivulko, V. D.;
Mudryi, A. V.

Publication type:

Article