Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 811, doi. 10.1134/S1063782620070131
- By:
- Publication type:
- Article
Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 7
Results: 12
1
2
Investigation of Pd|HfO2|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 803, doi. 10.1134/S1063782620070076
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- Publication type:
- Article
3
AlGaInSbAs Solid Solutions Grown on InAs Substrates by Zone Recrystallization with a Temperature Gradient.
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- Semiconductors, 2020, v. 54, n. 7, p. 759, doi. 10.1134/S1063782620070088
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- Publication type:
- Article
4
Doping-Dependent Nonlinear Electron Mobility in GaAs|InxGa1 –xAs Coupled Quantum-Well Pseudo-Morphic MODFET Structure.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 788, doi. 10.1134/S1063782620070118
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- Publication type:
- Article
5
Formation of GaN Nanorods in Monodisperse Spherical Mesoporous Silica Particles.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 782, doi. 10.1134/S106378262007012X
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- Publication type:
- Article
6
GaAs Semiconductor Passivated by (NH4)2Sx: Analysis of Different Passivation Methods Using Electrical Characteristics and XPS Measurements.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 817, doi. 10.1134/S106378262007009X
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- Publication type:
- Article
7
2D SiC/Si Structure: Electron States and Adsorbability.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 774, doi. 10.1134/S1063782620070039
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- Publication type:
- Article
8
Scattering Matrix Method for Calculating the Spontaneous-Emission Probability in Cylindrically Symmetric Structures.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 765, doi. 10.1134/S1063782620070106
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- Publication type:
- Article
9
Photodiodes for Detecting the Emission of Quantum-Sized Disc Lasers Operating in the Whispering Gallery Modes (2.2–2.3 μm).
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 796, doi. 10.1134/S1063782620070052
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- Publication type:
- Article
10
Effect of Interfaces and Thickness on the Crystallization Kinetics of Amorphous Germanium Films.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 754, doi. 10.1134/S1063782620070040
- By:
- Publication type:
- Article
11
First-Principle Investigation of the (001) Surface Reconstructions of GaSb and InSb Semiconductors.
- Published in:
- Semiconductors, 2020, v. 54, n. 7, p. 742, doi. 10.1134/S1063782620070027
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- Publication type:
- Article
12
Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review).
- Published in:
- 2020
- By:
- Publication type:
- Literature Review