Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 6
Results: 16
Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study.
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- Semiconductors, 2020, v. 54, n. 6, p. 691, doi. 10.1134/S106378262006010X
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Silicon Light-Emitting Diodes with Luminescence from (113) Defects.
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- Semiconductors, 2020, v. 54, n. 6, p. 687, doi. 10.1134/S1063782620060081
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Solar-Blind UV Detectors Based on β-Ga2O3 Films.
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- Semiconductors, 2020, v. 54, n. 6, p. 682, doi. 10.1134/S1063782620060093
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Ultimate Lasing Temperature of Microdisk Lasers.
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- Semiconductors, 2020, v. 54, n. 6, p. 677, doi. 10.1134/S1063782620060172
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Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching.
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- Semiconductors, 2020, v. 54, n. 6, p. 672, doi. 10.1134/S1063782620060111
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Correcting the Characteristics of Silicon Photodiodes by Ion Implantation.
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- Semiconductors, 2020, v. 54, n. 6, p. 666, doi. 10.1134/S1063782620060032
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Atomic Carbon Transport between the Rh Surface and Bulk in Graphene Formation and Destruction.
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- Semiconductors, 2020, v. 54, n. 6, p. 662, doi. 10.1134/S1063782620060147
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Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures.
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- Semiconductors, 2020, v. 54, n. 6, p. 658, doi. 10.1134/S1063782620060160
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Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite.
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- Semiconductors, 2020, v. 54, n. 6, p. 654, doi. 10.1134/S1063782620060020
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MBE-Grown InxGa1 –xAs Nanowires with 50% Composition.
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- Semiconductors, 2020, v. 54, n. 6, p. 650, doi. 10.1134/S1063782620060056
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Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping.
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- Semiconductors, 2020, v. 54, n. 6, p. 641, doi. 10.1134/S1063782620060068
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Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes.
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- Semiconductors, 2020, v. 54, n. 6, p. 634, doi. 10.1134/S1063782620060135
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Optical Properties and Critical Points of PbSe Nanostructured Thin Films.
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- Semiconductors, 2020, v. 54, n. 6, p. 630, doi. 10.1134/S106378262006007X
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- Article
AC Electrical Conductivity of FeGaInSe4.
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- Semiconductors, 2020, v. 54, n. 6, p. 627, doi. 10.1134/S1063782620060123
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Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field.
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- Semiconductors, 2020, v. 54, n. 6, p. 623, doi. 10.1134/S1063782620060044
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Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions.
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- Semiconductors, 2020, v. 54, n. 6, p. 615, doi. 10.1134/S1063782620060159
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