Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 6

Results: 16

Solar-Blind UV Detectors Based on β-Ga2O3 Films.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 682, doi. 10.1134/S1063782620060093

By:

Kalygina, V. M.;
Almaev, A. V.;
Novikov, V. A.;
Petrova, Yu. S.

Publication type:

Article

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 672, doi. 10.1134/S1063782620060111

By:

Markov, L. K.;
Smirnova, I. P.;
Kukushkin, M. V.;
Pavluchenko, A. S.

Publication type:

Article

Correcting the Characteristics of Silicon Photodiodes by Ion Implantation.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 666, doi. 10.1134/S1063782620060032

By:

Asadchikov, V. E.;
Dyachkova, I. G.;
Zolotov, D. A.;
Chukhovskii, F. N.;
Nikitina, E. V.

Publication type:

Article

Impact of Carrier Gas on the GaN Layers Properties Grown on (001) and (11n) GaAs Substrates by AP-MOVPE: Comparative Study.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 691, doi. 10.1134/S106378262006010X

By:

Laifi, J.;
Bchetnia, A.

Publication type:

Article

Electronic Properties of Silicene Films Subjected to Neutron Transmutation Doping.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 641, doi. 10.1134/S1063782620060068

By:

Galashev, A. E.;
Vorob'ev, A. S.

Publication type:

Article

Silicon Light-Emitting Diodes with Luminescence from (113) Defects.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 687, doi. 10.1134/S1063782620060081

By:

Kalyadin, A. E.;
Shtel'makh, K. F.;
Aruev, P. N.;
Zabrodskii, V. V.;
Karabeshkin, K. V.;
Shek, E. I.;
Sobolev, N. A.

Publication type:

Article

Optical Properties and Critical Points of PbSe Nanostructured Thin Films.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 630, doi. 10.1134/S106378262006007X

By:

Huseynaliyev, M. N.;
Yasinova, S. N.;
Jalilli, D. N.;
Mekhtiyeva, S. I.

Publication type:

Article

Ultimate Lasing Temperature of Microdisk Lasers.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 677, doi. 10.1134/S1063782620060172

By:

Zhukov, A. E.;
Kryzhanovskaya, N. V.;
Moiseev, E. I.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Nadtochiy, A. M.;
Maximov, M. V.

Publication type:

Article

Atomic Carbon Transport between the Rh Surface and Bulk in Graphene Formation and Destruction.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 662, doi. 10.1134/S1063782620060147

By:

Rut'kov, E. V.;
Afanas'eva, E. Yu.;
Gall, N. R.

Publication type:

Article

Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 658, doi. 10.1134/S1063782620060160

By:

Shutaev, V. A.;
Grebenshchikova, E. A.;
Sidorov, V. G.;
Kompan, M. E.;
Yakovlev, Yu. P.

Publication type:

Article

Formation of a Two-Phase Structure in CH3NH3PbI3 Organometallic Perovskite.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 654, doi. 10.1134/S1063782620060020

By:

Amasev, D. V.;
Mikhalevich, V. G.;
Tameev, A. R.;
Saitov, Sh. R.;
Kazanskii, A. G.

Publication type:

Article

MBE-Grown InxGa1 –xAs Nanowires with 50% Composition.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 650, doi. 10.1134/S1063782620060056

By:

Dubrovskii, V. G.;
Reznik, R. R.;
Kryzhanovskaya, N. V.;
Shtrom, I. V.;
Ubyivovk, E. D.;
Soshnikov, I. P.;
Cirlin, G. E.

Publication type:

Article

AC Electrical Conductivity of FeGaInSe4.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 627, doi. 10.1134/S1063782620060123

By:

Niftiyev, N. N.;
Mammadov, F. M.;
Muradov, M. B.

Publication type:

Article

Influence of Ni-Doping in ZnO Thin Films Coated on Porous Silicon Substrates and ZnO|PS Based Hetero-Junction Diodes.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 634, doi. 10.1134/S1063782620060135

By:

Priya, V. L.;
Prithivikumaran, N.

Publication type:

Article

Charge-Transfer Features in Zinc Sulfide Doped Layers in a Low-Frequency Alternating Electric Field.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 623, doi. 10.1134/S1063782620060044

By:

Avanesyan, V. T.;
Zharkoy, A. B.;
Rakina, A. V.

Publication type:

Article

Impedance Characteristics of γ-Irradiated (TlGaSe2)1 –x(TlInS2)x Solid Solutions.

Published in:

Semiconductors, 2020, v. 54, n. 6, p. 615, doi. 10.1134/S1063782620060159

By:

Sardarly, R. M.;
Salmanov, F. T.;
Aliyeva, N. A.;
Abbasli, R. M.

Publication type:

Article