Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 4

Results: 20

Single-Mode Lasers (1050 nm) of Mesa-Stripe Design Based on an AlGaAs/GaAs Heterostructure with an Ultra-Narrow Waveguide.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 489, doi. 10.1134/S1063782620040181

By:

Shashkin, I. S.;
Leshko, A. Y.;
Nikolaev, D. N.;
Shamakhov, V. V.;
Veselov, D. A.;
Rudova, N. A.;
Bakhvalov, K. V.;
Zolotarev, V. V.;
Slipchenko, S. O.;
Pikhtin, N. A.;
Kop'ev, P. S.

Publication type:

Article

Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 484, doi. 10.1134/S106378262004017X

By:

Shashkin, I. S.;
Leshko, A. Y.;
Nikolaev, D. N.;
Shamakhov, V. V.;
Rudova, N. A.;
Bakhvalov, K. V.;
Lutetskiy, A. V.;
Kapitonov, V. A.;
Zolotarev, V. V.;
Slipchenko, S. O.;
Pikhtin, N. A.;
Kop'ev, P. S.

Publication type:

Article

Growth and Characterization of TCNQ-Doped Ni(II)TAAB Thin Film As a New π-Conjugated Organic Semiconductor.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 441, doi. 10.1134/S1063782620040144

By:

Sánchez-Vergara, M. E.;
Molina, B.;
Hernández-García, A.;
Álvarez-Bada, J. R.;
Salcedo, R.

Publication type:

Article

Features of SiO2 Layers Synthesized on Silicon by Molecular Layer Deposition.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 506, doi. 10.1134/S106378262004003X

By:

Baraban, A. P.;
Denisov, E. A.;
Dmitriev, V. A.;
Drozd, A. V.;
Drozd, V. E.;
Selivanov, A. A.;
Seisyan, R. P.

Publication type:

Article

TCAD Simulation Study of Single-, Double-, and Triple-Material Gate Engineered Trigate FinFETs.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 501, doi. 10.1134/S1063782620040211

By:

Vimala, P.;
Arun Samuel, T. S.

Publication type:

Article

Investigation into the Internal Electric-Field Strength in the Active Region of InGaN/GaN-Based LED Structures with Various Numbers of Quantum Wells by Electrotransmission Spectroscopy.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 495, doi. 10.1134/S1063782620040028

By:

Aslanyan, A. E.;
Avakyants, L. P.;
Chervyakov, A. V.;
Turkin, A. N.;
Mirzai, S. S.;
Kureshov, V. A.;
Sabitov, D. R.;
Marmalyuk, A. A.

Publication type:

Article

Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 476, doi. 10.1134/S1063782620040053

By:

Emelyanov, V. M.;
Kalyuzhnyy, N. A.;
Mintairov, S. A.;
Nakhimovich, M. V.;
Salii, R. A.;
Shvarts, M. Z.

Publication type:

Article

Surface Modification of SOI Sensors for the Detection of RNA Biomarkers.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 471, doi. 10.1134/S1063782620040090

By:

Naumova, O. V.;
Fomin, B. I.;
Dmitrienko, E. V.;
Pyshnaya, I. A.;
Pyshnyi, D. V.

Publication type:

Article

Terahertz Photoconductivity in Graphene in a Magnetic Field.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 465, doi. 10.1134/S106378262004020X

By:

Vasiliev, Yu. B.;
Novikov, S. N.;
Danilov, S. N.;
Ganichev, S. D.

Publication type:

Article

Study of the Properties of Two-Dimensional MoS2 and WS2 Films Synthesized by Chemical-Vapor Deposition.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 454, doi. 10.1134/S1063782620040193

By:

Smagulova, S. A.;
Vinokurov, P. V.;
Semenova, A. A.;
Popova, E. I.;
Vasylieva, F. D.;
Obraztsova, E. D.;
Fedotov, P. V.;
Antonova, I. V.

Publication type:

Article

Multilevel Recording in Ge2Sb2Te5 Thin Films.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 450, doi. 10.1134/S1063782620040065

By:

Fefelov, S. A.;
Kazakova, L. P.;
Bogoslovskiy, N. A.;
Bylev, A. B.;
Yakubov, A. O.

Publication type:

Article

Modification of the Photoelectric Properties of Undoped Hydrogenated Amorphous Silicon Films under Preliminary Illumination at Elevated Temperatures.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 437, doi. 10.1134/S1063782620040119

By:

Ormont, N. N.;
Kurova, I. A.

Publication type:

Article

On the Dominant Mechanism of the Nonradiative Excitation of Manganese Ions in II–VI Diluted Magnetic Semiconductors.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 433, doi. 10.1134/S1063782620040041

By:

Chernenko, A. V.

Publication type:

Article

Size Quantization in n-GaP.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 429, doi. 10.1134/S1063782620040132

By:

Rasulov, V. R.;
Rasulov, P. Ya.;
Eshboltaev, I. M.;
Sultonov, R. R.

Publication type:

Article

Dependence of the Crystallization Kinetics of Cr0.26Si0.74 Thin Films on Their Thickness.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 426, doi. 10.1134/S1063782620040107

By:

Novikov, S. V.;
Kuznetsova, V. S.;
Burkov, A. T.;
Schumann, J.

Publication type:

Article

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 417, doi. 10.1134/S1063782620040168

By:

Seredin, P. V.;
Goloshchapov, D. L.;
Zolotukhin, D. S.;
Lenshin, A. S.;
Mizerov, A. M.;
Timoshnev, S. N.;
Nikitina, E. V.;
Arsentiev, I. N.;
Kukushkin, S. A.

Publication type:

Article

Raman Scattering in the InSb–MnSb Eutectic Composite.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 412, doi. 10.1134/S1063782620040089

By:

Mammadov, I. Kh.;
Arasly, D. H.;
Rahimov, R. N.;
Khalilova, A. A.

Publication type:

Article

Dielectric Spectroscopy and Mechanism of the Semiconductor–Metal Phase Transition in Doped VO2:Ge and VO2:Mg Films.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 403, doi. 10.1134/S1063782620040077

By:

Ilinskiy, A. V.;
Kastro, R. A.;
Pashkevich, M. E.;
Shadrin, E. B.

Publication type:

Article

Temperature-Dependent Total Absorption of Exciton Polaritons in Bulk Semiconductors.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 399, doi. 10.1134/S1063782620040156

By:

Seisyan, R. P.;
Vaganov, S. A.

Publication type:

Article

Investigation of the Magnesium Impurity in Silicon.

Published in:

Semiconductors, 2020, v. 54, n. 4, p. 393, doi. 10.1134/S1063782620040120

By:

Portsel, L. M.;
Shuman, V. B.;
Lavrent'ev, A. A.;
Lodygin, A. N.;
Abrosimov, N. V.;
Astrov, Yu. A.

Publication type:

Article