Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 3

Results: 19

On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 378, doi. 10.1134/S1063782620030173

By:

Shupenev, A. E.;
Korshunov, I. S.;
Grigoryants, A. G.

Publication type:

Article

Synthesis and Characterization of Sol–Gel Screen Printed Gd:ZnO (GZO) Film Towards Opto-Electronic Applications.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 374, doi. 10.1134/S1063782620030069

By:

Preeti Chaudhary;
Vipin Kumar

Publication type:

Article

Parasitic Recombination in a Laser with Asymmetric Barrier Layers.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 366, doi. 10.1134/S1063782620030203

By:

Zubov, F. I.;
Muretova, M. E.;
Payusov, A. S.;
Maximov, M. V.;
Zhukov, A. E.;
Asryan, L. V.

Publication type:

Article

Photoreversible Current in InGaN/GaN-Based LED Heterostructures with Different Numbers of QWs.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 362, doi. 10.1134/S1063782620030021

By:

Aslanyan, A. E.;
Avakyants, L. P.;
Chervyakov, A. V.;
Turkin, A. N.;
Kureshov, V. A.;
Sabitov, D. R.;
Marmalyuk, A. A.

Publication type:

Article

Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 355, doi. 10.1134/S1063782620030112

By:

Kalinovskii, V. S.;
Kontrosh, E. V.;
Klimko, G. V.;
Ivanov, S. V.;
Yuferev, V. S.;
Ber, B. Y.;
Kazantsev, D. Y.;
Andreev, V. M.

Publication type:

Article

Impedance Spectroscopy of Porous Silicon and Silicon-Carbon Anodes Produced by Sintering.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 383, doi. 10.1134/S1063782620030124

By:

Lozhkina, D. A.;
Rumyantsev, A. M.;
Astrova, E. V.

Publication type:

Article

Properties of a Tamm-Plasmon-Based Microcavity with Metal Intracavity Layers and an Organic Active Region.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 350, doi. 10.1134/S106378262003015X

By:

Morozov, K. M.;
Belonovskii, A. V.;
Girshova, E. I.;
Ivanov, K. A.;
Kaliteevski, M. A.

Publication type:

Article

Double Avalanche Injection in Diode Avalanche Sharpeners.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 345, doi. 10.1134/S1063782620030100

By:

Ivanov, M. S.;
Podolska, N. I.;
Rodin, P. B.

Publication type:

Article

Kelvin Probe Force Microscopy Study of the Electrostatic System of the Crystal Surface of AuNi/GaN Schottky Diodes.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 337, doi. 10.1134/S1063782620030185

By:

Torkhov, N. A.;
Novikov, V. A.

Publication type:

Article

Manganese Clusterization in ZnS:Mn, Mg Synthesized by Self-Propagating High-Temperature Synthesis.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 330, doi. 10.1134/S1063782620030033

By:

Bacherikov, Yu. Yu.;
Vorona, I. P.;
Okhrimenko, O. B.;
Kladko, V. P.;
Zhuk, A. G.;
Okulov, S. M.;
Polishchuk, Yu. O.;
Gilchuk, A. V.;
Romanenko, Yu. M.;
Kidalov, V. V.

Publication type:

Article

On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSixOy Films on Quartz Substrates by Furnace and Pulsed Laser Annealing.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 322, doi. 10.1134/S1063782620030070

By:

Zhang Fan;
Kochubey, S. A.;
Stoffel, M.;
Rinnert, H.;
Vergnat, M.;
Volodin, V. A.

Publication type:

Article

Ohmic Contacts to Gallium Nitride-Based Structures.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 317, doi. 10.1134/S1063782620030197

By:

Zhelannov, A. V.;
Ionov, A. S.;
Seleznev, B. I.;
Fedorov, D. G.

Publication type:

Article

Effective Mass Model Supported Band Gap Variation in Cobalt-Doped ZnO Nanoparticles Obtained by Co-Precipitation.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 311, doi. 10.1134/S1063782620030136

By:

Misra, K. P.;
Jain, S.;
Agarwala, A.;
Halder, N.;
Chattopadhyay, S.

Publication type:

Article

Characteristics of DC Electrical Conductivity and Optoelectronic Features of Tin Dioxide Nanocrystals Synthesized by Sol–Gel Chemistry.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 297, doi. 10.1134/S1063782620030045

By:

Badr, A. M.;
Afify, H. H.;
Shaker, Sh. E.;
Elshaikh, H. A.

Publication type:

Article

On the Role of Structural Imperfections of Graphene in Resonant Tunneling through Localized States in the h-BN Barrier of van-der-Waals Heterostructures.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 291, doi. 10.1134/S1063782620030082

By:

Grigoriev, M. V.;
Ghazaryan, D. A.;
Vdovin, E. E.;
Khanin, Yu. N.;
Morozov, S. V.;
Novoselov, K. S.

Publication type:

Article

Photoluminescence and Photoelectric Properties of the ZnO–LiNbO3 Thin-Film Structure in the Ultraviolet and Visible Spectral Regions.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 285, doi. 10.1134/S1063782620030094

By:

Grigoryev, L. V.;
Morozov, I. S.;
Zhuravlev, N. V.;
Semenov, A. A.;
Nikitin, A. A.

Publication type:

Article

Reflection from the Side Face of a PbSb2Te4 Crystal.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 282, doi. 10.1134/S1063782620030161

By:

Nemov, S. A.;
Ulashkevich, Yu. V.;
Pogumirsky, M. V.;
Stepanova, O. S.

Publication type:

Article

Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 278, doi. 10.1134/S1063782620030148

By:

Mokhov, E. N.;
Rabchinskiy, M. K.;
Nagalyuk, S. S.;
Gafurov, M. R.;
Kazarova, O. P.

Publication type:

Article

Heating of Electrons in Pure Ge in a Quantum Magnetic Field Upon the Thermal Excitation of Charge Carriers.

Published in:

Semiconductors, 2020, v. 54, n. 3, p. 275, doi. 10.1134/S1063782620030057

By:

Bannaya, V. F.;
Nikitina, E. V.

Publication type:

Article