Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 10

Results: 32

Continuous-Wave Stimulated Emission in the 10–14-μm Range under Optical Excitation in HgCdTe/CdHgTe-QW Structures with Quasirelativistic Dispersion.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1371, doi. 10.1134/S1063782620100322

By:

Utochkin, V. V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Gavrilenko, V. I.;
Kulikov, N. S.;
Fadeev, M. A.;
Rumyantsev, V. V.;
Mikhailov, N. N.;
Dvoretsky, S. A.;
Razova, A. A.;
Morozov, S. V.

Publication type:

Article

Investigation of Stimulated Emission from HgTe/CdHgTe Quantum-Well Heterostructures in the 3–5 μm Atmospheric Transparency Window.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1365, doi. 10.1134/S106378262010019X

By:

Kushkov, L. A.;
Utochkin, V.V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Kudryavtsev, K. E.;
Gavrilenko, V. I.;
Kulikov, N. S.;
Fadeev, M. A.;
Rumyantsev, V. V.;
Mikhailov, N. N.;
Dvoretskii, S. A.;
Razova, A. A.;
Morozov, S. V.

Publication type:

Article

Comparison of the Efficiency of Promising Heterostructure Frequency-Multiplier Diodes of the THz-Frequency Range.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1360, doi. 10.1134/S1063782620100073

By:

Dyukov, D. I.;
Fefelov, A. G.;
Korotkov, A. V.;
Pavelyev, D. G.;
Kozlov, V. A.;
Obolenskaya, E. S.;
Ivanov, A. S.;
Obolensky, S. V.

Publication type:

Article

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1352, doi. 10.1134/S1063782620100334

By:

Yablonskiy, A. N.;
Novikov, A. V.;
Stepikhova, M. V.;
Sergeev, S. M.;
Baidakova, N. A.;
Shaleev, M. V.;
Krasilnik, Z. F.

Publication type:

Article

Relaxation of the Excited States of Arsenic in Strained Germanium.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1347, doi. 10.1134/S1063782620100188

By:

Kovalevsky, K. A.;
Choporova, Yu. Yu.;
Zhukavin, R. Kh.;
Abrosimov, N. V.;
Pavlov, S. G.;
Hübers, H.-W.;
Tsyplenkov, V. V.;
Kukotenko, V. D.;
Knyazev, B. A.;
Shastin, V. N.

Publication type:

Article

Time-Resolved Photoluminescence in Heterostructures with InGaAs:Cr/GaAs Quantum Wells.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1341, doi. 10.1134/S1063782620100061

By:

Dorokhin, M. V.;
Demina, P. B.;
Danilov, Yu. A.;
Vikhrova, O. V.;
Kuznetsov, Yu. M.;
Ved', M. V.;
Iikawa, F.;
Balanta, M. A. G.

Publication type:

Article

Combination of Reactive-Ion Etching and Chemical Etching as a Method for Optimizing the Surface Relief on AlGaInN Heterostructures.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1310, doi. 10.1134/S1063782620100218

By:

Markov, L. K.;
Smirnova, I. P.;
Kukushkin, M. V.;
Pavluchenko, A. S.

Publication type:

Article

Growth of a Ge Layer on a Si/SiO2/Si(100) Structure by the Hot Wire Chemical Vapor Deposition.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1332, doi. 10.1134/S1063782620100309

By:

Sushkov, A. A.;
Pavlov, D. A.;
Denisov, S. A.;
Chalkov, V. Yu.;
Kryukov, R. N.;
Pitirimova, E. A.

Publication type:

Article

Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1325, doi. 10.1134/S1063782620100164

By:

Klimov, A. E.;
Akimov, A. N.;
Akhundov, I. O.;
Golyashov, V. A.;
Gorshkov, D. V.;
Ishchenko, D. V.;
Matyushenko, E. V.;
Neizvestny, I. G.;
Sidorov, G. Yu.;
Suprun, S. P.;
Tarasov, A. S.;
Tereshchenko, O. E.;
Epov, V.S.

Publication type:

Article

Crystalline-Phase Switching in Heterostructured Ga(As,P) Nanowires under the Impact of Elastic Strains.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1320, doi. 10.1134/S1063782620100267

By:

Sibirev, N. V.;
Berdnikov, Yu. S.;
Sibirev, V. N.

Publication type:

Article

Electrical and Photoelectric Properties of α-Si/SiO2 and α-Ge/SiO2 Multilayer Nanostructures on p-Si Substrates Annealed at Various Temperatures.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1315, doi. 10.1134/S1063782620100292

By:

Sreseli, O. M.;
Elistratova, M. A.;
Goryachev, D. N.;
Beregulin, E. V.;
Nevedomskii, V. N.;
Bert, N. A.;
Ershov, A. V.

Publication type:

Article

Behavior of Lithium Donors in Bulk Single-Crystal Isotopically Pure 28Si1 –x72Gex Alloys.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1336, doi. 10.1134/S1063782620100097

By:

Ezhevskii, A. A.;
Sennikov, P. G.;
Guseinov, D. V.;
Soukhorukov, A. V.;
Kalinina, E. A.;
Abrosimov, N. V.

Publication type:

Article

Physicochemical Interactions in the GeSb2Te4–PbSb2Te4 System.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1304, doi. 10.1134/S1063782620100139

By:

Gurbanov, G. R.;
Adygezalova, M. B.

Publication type:

Article

Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1296, doi. 10.1134/S1063782620100127

By:

Gassoumi, M.

Publication type:

Article

Investigation of the Electrical Properties of Double-Gate Dual-Active-Layer (DG-DAL) Thin-Film Transistor (TFT) with HfO2|La2O3|HfO2 (HLH) Sandwich Gate Dielectrics.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1290, doi. 10.1134/S1063782620100243

By:

Ramesh, L.;
Moparthi, S.;
Tiwari, P. K.;
Samoju, V. R.;
Saramekala, G. K.

Publication type:

Article

Analysis of the Temperature Dependence of Diode Ideality Factor in InGaN-Based UV-A Light-Emitting Diode.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1284, doi. 10.1134/S106378262010005X

By:

Dalapati, P.;
Manik, N. B.;
Basu, A. N.

Publication type:

Article

1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1276, doi. 10.1134/S1063782620100048

By:

Blokhin, S. A.;
Nevedomsky, S. N.;
Bobrov, M. A.;
Maleev, N. A.;
Blokhin, A. A.;
Kuzmenkov, A. G.;
Vasyl'ev, A. P.;
Rohas, S. S.;
Babichev, A. V.;
Gladyshev, A. G.;
Novikov, I. I.;
Karachinsky, L. Ya.;
Denisov, D. V.;
Voropaev, K. O.;
Ionov, A. S.;
Egorov, A. Yu.;
Ustinov, V. M.

Publication type:

Article

Comparative Analysis of the Optical and Physical Properties of InAs and In0.8Ga0.2As Quantum Dots and Solar Cells Based on them.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1267, doi. 10.1134/S1063782620100255

By:

Salii, R. A.;
Mintairov, S. A.;
Nadtochiy, A. M.;
Nevedomskii, V. N.;
Shvarts, M. Z.;
Kalyuzhnyy, N. A.

Publication type:

Article

Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1260, doi. 10.1134/S1063782620100280

By:

Sobolev, M. M.;
Soldatenkov, F. Y.

Publication type:

Article

External Quantum Efficiency of Bifacial HIT Solar Cells.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1254, doi. 10.1134/S1063782620100085

By:

Ermachikhin, A. V.;
Vorobyov, Yu. V.;
Maslov, A. D.;
Trusov, E. P.;
Litvinov, V. G.

Publication type:

Article

Spontaneous and Stimulated Emission in Thin Films of Cu(In1 –xGax)(SySe1 –y)2 Solid Solutions in the Сomposition of Solar Cells.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1247, doi. 10.1134/S1063782620100310

By:

Svitsiankou, I. E.;
Pavlovskii, V. N.;
Muravitskaya, E. V.;
Lutsenko, E. V.;
Yablonskii, G. P.;
Borodavchenko, O. M.;
Zhivulko, V. D.;
Mudry, A. V.;
Yakushev, M. V.;
Kognovitckii, S. O.

Publication type:

Article

Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1241, doi. 10.1134/S1063782620100140

By:

Isayev, A. I.;
Mammadova, H. I.;
Mekhtiyeva, S. I.;
Alekberov, R. I.

Publication type:

Article

Structure, Optical, and Photoelectric Properties of Lead-Sulfide Films Doped with Strontium and Barium.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1230, doi. 10.1134/S1063782620100231

By:

Maskaeva, L. N.;
Mostovshchikova, E. V.;
Voronin, V. I.;
Lekomtseva, E. E.;
Bogatova, P. S.;
Markov, V. F.

Publication type:

Article

Effect of Ultraviolet Radiation and Electric Field on the Conductivity of Structures Based on α- and ε-Ga2O3.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1224, doi. 10.1134/S1063782620100152

By:

Kalygina, V. M.;
Nikolaev, V. I.;
Almaev, A. V.;
Tsymbalov, A. V.;
Kopyev, V. V.;
Petrova, Y. S.;
Pechnikov, I. A.;
Butenko, P. N.

Publication type:

Article

Growth of ZnO Nanostructures by Wet Oxidation of Zn Thin Film Deposited on Heat-Resistant Flexible Substrates at Low Temperature.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1220, doi. 10.1134/S1063782620100103

By:

Farhat, O. F.;
Hisham, M.;
Bououdina, M.;
Oglat, Ammar A.;
Mohammed, Nyan J.

Publication type:

Article

Dispersive Transport of Hydrogen in MOS Structures after Exposure to Ionizing Radiation.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1215, doi. 10.1134/S1063782620100036

By:

Aleksandrov, O. V.

Publication type:

Article

Electron-Population Bragg Grating Induced in an AlxGa1 –xAs–GaAs–AlxGa1 –xAs Heterostructure by Intrinsic Stimulated Picosecond Emission.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1205, doi. 10.1134/S1063782620100024

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Zabegaev, D. N.;
Krivonosov, A. N.

Publication type:

Article

Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1198, doi. 10.1134/S1063782620100176

By:

Komkov, O. S.;
Khakhulin, S. A.;
Firsov, D. D.;
Avdienko, P. S.;
Sedova, I. V.;
Sorokin, S. V.

Publication type:

Article

Structure and Photoelectric Properties of PbSe Films Deposited in the Presence of Ascorbic Acid.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1191, doi. 10.1134/S106378262010022X

By:

Maskaeva, L. N.;
Yurk, V. M.;
Markov, V. F.;
Kuznetsov, M. V.;
Voronin, V. I.;
Lipina, O. A.

Publication type:

Article

Elastic and Thermal Properties of Orthorhombic and Tetragonal Phases of Cu2ZnSiSe4 by First Principles Calculations.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1185, doi. 10.1134/S1063782620100115

By:

Yan Li Gao;
Wen Shui Guan;
Yu Jing Dong

Publication type:

Article

Features of the Electrical-Conductivity Mechanism in γ-Irradiated TlInSe2 Single Crystals under Hydrostatic Pressure.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1180, doi. 10.1134/S1063782620100206

By:

Madatov, R. S.;
Gasimov, Sh. G.;
Babayev, S. S.;
Alekperov, A. S.;
Movsumova, I. M.;
Jabarov, S. H.

Publication type:

Article

Effect of a Nickel Impurity on the Galvanomagnetic Properties and Electronic Structure of PbTe.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1171, doi. 10.1134/S1063782620100279

By:

Skipetrov, E. P.;
Kovalev, B. B.;
Shevchenko, I. V.;
Knotko, A. V.;
Slynko, V. E.

Publication type:

Article