Works matching IS 10637826 AND DT 2020 AND VI 54 AND IP 1

Results: 27

Strong Coupling of Excitons in Hexagonal GaN Microcavities.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 127, doi. 10.1134/S1063782620010042
By:
- Belonovskii, A. V.;
- Pozina, G.;
- Levitskii, I. V.;
- Morozov, K. M.;
- Mitrofanov, M. I.;
- Girshova, E. I.;
- Ivanov, K. A.;
- Rodin, S. N.;
- Evtikhiev, V. P.;
- Kaliteevski, M. A.
Publication type:
Article
High-Power 4H-SiC MOSFET with an Epitaxial Buried Channel.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 122, doi. 10.1134/S1063782620010157
By:
- Mikhaylov, A. I.;
- Afanasyev, A. V.;
- Ilyin, V. A.;
- Luchinin, V. V.;
- Reshanov, S. A.;
- Schöner, A.
Publication type:
Article
Temperature Dependence of Losses in Mechanical Resonator Fabricated via the Direct Bonding of Silicon Strips.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 117, doi. 10.1134/S1063782620010200
By:
- Prokhorov, L. G.;
- Svetaev, A. V.;
- Lunin, B. S.;
- Zapotylko, N. R.;
- Katkov, A. A.;
- Mitrofanov, V. P.
Publication type:
Article
Multidimensional dU/dT Effect in High-Power Thyristors.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 112, doi. 10.1134/S1063782620010273
By:
- Yurkov, S. N.;
- Mnatsakanov, T. T.;
- Tandoev, A. G.
Publication type:
Article
Optimization of the In0.3Ga0.7As-Layer Thickness in a Triple-Junction In0.3Ga0.7As/GaAs/In0.5Ga0.5P Solar Cell.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 108, doi. 10.1134/S1063782620010133
By:
- Legan, D. M.;
- Pchelyakov, O. P.;
- Preobrazhenskii, V. V.
Publication type:
Article
Erratum to: First-Principles Investigation of Electronic Properties of GaAsxSb1 – x Ternary Alloys.
Published in:
2020
By:
- Singh, A. K.;
- Chandra, Devesh;
- Kattayat, Sandhya;
- Kumar, Shalendra;
- Alvi, P. A.;
- Rathi, Amit
Publication type:
Correction Notice
Application of High-Frequency EPR Spectroscopy for the Identification and Separation of Nitrogen and Vanadium Sites in Silicon Carbide Crystals and Heterostructures.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 150, doi. 10.1134/S1063782620010066
By:
- Edinach, E. V.;
- Krivoruchko, A. D.;
- Gurin, A. S.;
- Muzafarova, M. V.;
- Ilyin, I. V.;
- Babunts, R. A.;
- Romanov, N. G.;
- Badalyan, A. G.;
- Baranov, P. G.
Publication type:
Article
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 144, doi. 10.1134/S1063782620010108
By:
- Il'inskaya, N. D.;
- Lebedeva, N. M.;
- Zadiranov, Yu. M.;
- Ivanov, P. A.;
- Samsonova, T. P.;
- Kon'kov, O. I.;
- Potapov, A. S.
Publication type:
Article
Formation of Au Nanoparticles and Features of Etching of a Si Substrate under Irradiation with Atomic and Molecular Ions.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 137, doi. 10.1134/S106378262001025X
By:
- Tuzhilkin, M. S.;
- Bespalova, P. G.;
- Mishin, M. V.;
- Kolesnikov, I. E.;
- Karabeshkin, K. V.;
- Karaseov, P. A.;
- Titov, A. I.
Publication type:
Article
High-Performance Growth of Terahertz Quantum Cascade Laser Structures by Solid Source MBE.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 131, doi. 10.1134/S1063782620010248
By:
- Tao Jiang;
- Shen, Changle;
- Zhan, Zhiqiang;
- Li, Jia;
- Zou, Ruijiao;
- Luo, Jia Wen;
- Li, Ke Yu;
- Wang, Xuemin;
- Wu, Weidong
Publication type:
Article
Anomalous Edge Emission from Zinc Selenide Heavily Doped with Oxygen.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 102, doi. 10.1134/S1063782620010169
By:
- Morozova, N. K.;
- Miroshnikova, I. N.
Publication type:
Article
Comparison of the Effects of Environmental Treatments on Hydrogen Concentration and Energy Gap Variations of Hydrogenated Amorphous and Polymorphous Silicon Films Prepared by PECVD Technique.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 91, doi. 10.1134/S1063782620010121
By:
- Keramatzadeh, Alireza;
- Kosarian, Abdolnabi;
- Kaabi, Hooman
Publication type:
Article
Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 46, doi. 10.1134/S1063782620010078
By:
- Emtsev, V. V.;
- Abrosimov, N. V.;
- Kozlovski, V. V.;
- Oganesyan, G. A.;
- Poloskin, D. S.
Publication type:
Article
Carbon Nanotubes and Graphene Powder Based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 85, doi. 10.1134/S1063782620010170
By:
- Chani, Muhammad Tariq Saeed;
- Karimov, Khasan S.;
- Asiri, Abdullah M.
Publication type:
Article
Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 77, doi. 10.1134/S1063782620010212
By:
- Soumava Ghosh;
- Mukhopadhyay, Bratati;
- Sen, Gopa
Publication type:
Article
Study of Electrical Conductivity of La2S3.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 55, doi. 10.1134/S106378262001011X
By:
- Kaminskii, V. V.;
- Kazanin, M. M.;
- Grevtsev, M. A.;
- Sharenkova, N. V.;
- Hirai, S.;
- Jin, S.;
- Polushina, A. D.
Publication type:
Article
Hydrothermal Growth of Undoped and Zn-Doped SnO Nanocrystals: A Frequency Dependence of AC Conductivity and Dielectric Response Studies.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 73, doi. 10.1134/S1063782620010261
By:
- Gowd, A. Viswanath;
- Thangavel, R.
Publication type:
Article
Study of the Luminescence Power of Excitons and Impurity–Defect Centers Excited via Two-Photon Absorption.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 67, doi. 10.1134/S1063782620010091
By:
- Gladilin, A. A.;
- Danilov, V. P.;
- Il'ichev, N. N.;
- Kalinushkin, V. P.;
- Studenikin, M. I.;
- Uvarov, O. V.;
- Chapnin, V. A.;
- Ryabova, A. V.;
- Sidorin, A. V.;
- Gulyamova, E. S.;
- Tumorin, V. V.;
- Pashinin, P. P.
Publication type:
Article
First Principles Study on Electronic Structure and Optical Properties of Ternary Semiconductor InxAl1 –xP Alloys.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 58, doi. 10.1134/S1063782620010182
By:
- Okbi, Farid;
- Lakel, Said;
- Benramache, Said;
- Almi, K.
Publication type:
Article
Band Gap Opening of Doped Graphene Stone Wales Defects: Simulation Study.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 40, doi. 10.1134/S1063782620010236
By:
- Talla, Jamal A.
Publication type:
Article
High-Frequency Conductivity of Disordered Semiconductors in the Region of the Transition from the Linear to Quadratic Frequency Dependence.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 33, doi. 10.1134/S1063782620010194
By:
- Ormont, M. A.;
- Zvyagin, I. P.
Publication type:
Article
On the Growth and Properties of FeIn2S3.6Se0.4 Single Crystals.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 28, doi. 10.1134/S1063782620010054
By:
- Bodnar, I. V.
Publication type:
Article
Anticorrelation between the Intensity of Stimulated Picosecond Emission in GaAs and the Characteristic Time of Charge-Carrier Cooling.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 22, doi. 10.1134/S1063782620010029
By:
- Ageeva, N. N.;
- Bronevoi, I. L.;
- Zabegaev, D. N.;
- Krivonosov, A. N.
Publication type:
Article
Photodielectric Effect in Bi12SiO20 Sillenite Crystals.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 19, doi. 10.1134/S1063782620010030
By:
- Avanesyan, V. T.;
- Piskovatskova, I. V.
Publication type:
Article
Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 15, doi. 10.1134/S1063782620010145
By:
- Mezdrogina, M. M.;
- Vinogradov, A. Ya.;
- Kozhanova, Yu. V.
Publication type:
Article
Revisiting the Nature of the Anomalous Temperature Dependence of the Hall Coefficient Observed for Semiconductor Crystals of Bi2Te3–Sb2Te3 Solid Solutions.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 11, doi. 10.1134/S1063782620010224
By:
- Stepanov, N. P.
Publication type:
Article
Effect of Oxygen and Fluorine Absorption on the Electronic Structure of the InSb(111) Surface.
Published in:
Semiconductors, 2020, v. 54, n. 1, p. 1, doi. 10.1134/S106378262001008X
By:
- Fuks, A. A.;
- Bakulin, A. V.;
- Kulkova, S. E.;
- Valisheva, N. A.;
- Postnikov, A. V.
Publication type:
Article