Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 9

Results: 27

On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1211, doi. 10.1134/S106378261909015X

By:

Polischuk, O. V.;
Fateev, D. V.;
Popov, V. V.

Publication type:

Article

Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1272, doi. 10.1134/S1063782619090069

By:

Ikonnikov, A. V.;
Chernichkin, V. I.;
Dudin, V. S.;
Akopian, D. A.;
Akimov, A. N.;
Klimov, A. E.;
Tereshchenko, O. E.;
Ryabova, L. I.;
Khokhlov, D. R.

Publication type:

Article

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1266, doi. 10.1134/S1063782619090240

By:

Uaman Svetikova, T. A.;
Ikonnikov, A. V.;
Rumyantsev, V. V.;
Kozlov, D. V.;
Chernichkin, V. I.;
Galeeva, A. V.;
Varavin, V. S.;
Mikhailov, N. N.;
Dvoretskii, S. A.;
Morozov, S. V.;
Gavrilenko, V. I.

Publication type:

Article

Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1192, doi. 10.1134/S1063782619090124

By:

Obolenskaya, E. S.;
Ivanov, A. S.;
Pavelyev, D. G.;
Kozlov, V. A.;
Vasilev, A. P.

Publication type:

Article

Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1258, doi. 10.1134/S1063782619090082

By:

Khrebtov, A. I.;
Reznik, R. R.;
Ubyivovk, E. V.;
Litvin, A. P.;
Skurlov, I. D.;
Parfenov, P. S.;
Kulagina, A. S.;
Danilov, V. V.;
Cirlin, G. E.

Publication type:

Article

Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1262, doi. 10.1134/S1063782619090161

By:

Prokhorov, D. S.;
Shengurov, V. G.;
Denisov, S. A.;
Filatov, D. O.;
Zdoroveishev, A. V.;
Chalkov, V. Yu.;
Zaitsev, A. V.;
Ved', M. V.;
Dorokhin, M. V.;
Baidakova, N. A.

Publication type:

Article

Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1255, doi. 10.1134/S1063782619090288

By:

Zhukavin, R. Kh.;
Pavlov, S. G.;
Pohl, A.;
Abrosimov, N. V.;
Riemann, H.;
Redlich, B.;
Hübers, H.-W.;
Shastin, V. N.

Publication type:

Article

Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1249, doi. 10.1134/S1063782619090276

By:

Zabavichev, I. Yu.;
Potehin, A. A.;
Puzanov, A. S.;
Obolenskiy, S. V.;
Kozlov, V. A.

Publication type:

Article

Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1246, doi. 10.1134/S1063782619090252

By:

Umnyagin, G. M.;
Degtyarov, V. E.;
Obolenskiy, S. V.

Publication type:

Article

Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al2O3 Substrate.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1242, doi. 10.1134/S1063782619090227

By:

Sushkov, A. A.;
Pavlov, D. A.;
Shengurov, V. G.;
Denisov, S. A.;
Chalkov, V. Yu.;
Baidus, N. V.;
Rykov, A. V.;
Kryukov, R. N.

Publication type:

Article

Tunnel Diodes Based on n+-Ge/p+-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1238, doi. 10.1134/S1063782619090203

By:

Shengurov, V. G.;
Filatov, D. O.;
Denisov, S. A.;
Chalkov, V. Yu.;
Alyabina, N. A.;
Zaitsev, A. V.

Publication type:

Article

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1234, doi. 10.1134/S1063782619090197

By:

Shastin, V. N.;
Zhukavin, R. Kh.;
Kovalevsky, K. A.;
Tsyplenkov, V. V.;
Rumyantsev, V. V.;
Shengurov, D. V.;
Pavlov, S. G.;
Shuman, V. B.;
Portsel, L. M.;
Lodygin, A. N.;
Astrov, Yu. A.;
Abrosimov, N. V.;
Klopf, J. M.;
Hübers, H.-W.

Publication type:

Article

Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1148, doi. 10.1134/S1063782619090033

By:

Baryshev, V. R.;
Ginzburg, N. S.;
Zaslavsky, V. Yu.;
Malkin, A. M.

Publication type:

Article

On the Spin States of Electrons in a Double Quantum Dot in a Two-Dimensional Topological Insulator with Spin-Orbit Interaction.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1229, doi. 10.1134/S1063782619090215

By:

Sukhanov, A. A.;
Sablikov, V. A.

Publication type:

Article

Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1222, doi. 10.1134/S1063782619090173

By:

Puzanov, A. S.;
Venediktov, M. M.;
Obolenskiy, S. V.;
Kozlov, V. A.

Publication type:

Article

Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1217, doi. 10.1134/S1063782619090185

By:

Rumyantsev, V. V.;
Maremyanin, K. V.;
Fokin, A. P.;
Dubinov, A. A.;
Utochkin, V. V.;
Glyavin, M. Yu.;
Mikhailov, N. N.;
Dvoretskii, S. A.;
Morozov, S. V.;
Gavrilenko, V. I.

Publication type:

Article

Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1175, doi. 10.1134/S1063782619090070

By:

Ivchenko, E. L.;
Kalevich, V. K.;
Kunold, A.;
Balocchi, A.;
Marie, X.;
Amand, T.

Publication type:

Article

On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1207, doi. 10.1134/S1063782619090148

By:

Plankina, S. M.;
Vikhrova, O. V.;
Zvonkov, B. N.;
Zubkov, S. Yu.;
Kriukov, R. N.;
Nezhdanov, A. V.;
Pavlov, D. A.;
Pashen'kin, I. Yu.;
Sushkov, A. A.

Publication type:

Article

Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1203, doi. 10.1134/S1063782619090136

By:

Okhapkin, A. I.;
Yunin, P. A.;
Drozdov, M. N.;
Korolyov, S. A.;
Kraev, S. A.;
Arkhipova, E. A.;
Skorokhodov, E. V.;
Bushuykin, P. A.;
Shashkin, V. I.

Publication type:

Article

Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1198, doi. 10.1134/S1063782619090100

By:

Kozlov, D. V.;
Rumyantsev, V. V.;
Morozov, S. V.

Publication type:

Article

Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1182, doi. 10.1134/S1063782619090094

By:

Klimov, A. E.;
Akimov, A. N.;
Akhundov, I. O.;
Golyashov, V. A.;
Gorshkov, D. V.;
Ishchenko, D. V.;
Sidorov, G. Yu.;
Suprun, S. P.;
Tarasov, A. S.;
Epov, V. S.;
Tereshchenko, O. E.

Publication type:

Article

On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1187, doi. 10.1134/S1063782619090112

By:

Mizerov, A. M.;
Timoshnev, S. N.;
Nikitina, E. V.;
Sobolev, M. S.;
Shubin, K. Yu.;
Berezovskaia, T. N.;
Mokhov, D. V.;
Lundin, W. V.;
Nikolaev, A. E.;
Bouravleuv, A. D.

Publication type:

Article

On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1170, doi. 10.1134/S1063782619090239

By:

Trifonov, A. V.;
Ignatiev, I. V.;
Kavokin, K. V.;
Kavokin, A. V.;
Shapochkin, P. Yu.;
Efimov, Yu. P.;
Eliseev, S. A.;
Lovtcius, V. A.

Publication type:

Article

Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1164, doi. 10.1134/S1063782619090057

By:

Fateev, D. V.;
Mashinsky, K. V.;
Moiseenko, I. M.;
Popov, V. V.

Publication type:

Article

In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1158, doi. 10.1134/S1063782619090045

By:

Dorokhin, M. V.;
Demina, P. B.;
Erofeeva, I. V.;
Zdoroveyshchev, A. V.;
Kuznetsov, Yu. M.;
Boldin, M. S.;
Popov, A. A.;
Lantsev, E. A.;
Boryakov, A. V.

Publication type:

Article

Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd0.7Hg0.3Te QWs Near 14 μm.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1154, doi. 10.1134/S1063782619090264

By:

Utochkin, V. V.;
Aleshkin, V. Ya.;
Dubinov, A. A.;
Gavrilenko, V. I.;
Kulikov, N. S.;
Fadeev, M. A.;
Rumyantsev, V. V.;
Mikhailov, N. N.;
Dvoretskii, S. A.;
Morozov, S. V.

Publication type:

Article

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 9, p. 1143, doi. 10.1134/S1063782619090021

By:

Abramkin, D. S.;
Petrushkov, M. O.;
Putyato, M. A.;
Semyagin, B. R.;
Emelyanov, E. A.;
Preobrazhenskii, V. V.;
Gutakovskii, A. K.;
Shamirzaev, T. S.

Publication type:

Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 9

On the Amplification of Terahertz Radiation by High-Q Resonant Plasmons in a Periodic Graphene Bilayer under Plasmon-Mode Anticrossing.

Features of the Impurity-Photoconductivity Spectra of PbSnTe(In) Epitaxial Films with Temperature Changes.

Evolution of the Impurity Photoconductivity in CdHgTe Epitaxial Films with Temperature.

Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices.

Nonradiative Energy Transfer in Hybrid Nanostructures with Varied Dimensionality.

Enhanced Photoluminescence of Heavily Doped n-Ge/Si(001) Layers.

Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation.

Simulation of the Formation of a Cascade of Displacements and Transient Ionization Processes in Silicon Semiconductor Structures under Neutron Exposure.

Numerical Simulation of the Current–Voltage Characteristics of Bilayer Resistive Memory Based on Non-Stoichiometric Metal Oxides.

Studies of the Cross Section and Photoluminescence of a GaAs Layer Grown on a Si/Al<sub>2</sub>O<sub>3</sub> Substrate.

Tunnel Diodes Based on n<sup>+</sup>-Ge/p<sup>+</sup>-Si(001) Epitaxial Structures Grown by the Hot-Wire Chemical Vapor Deposition.

Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission.

Semiconductor Heterolasers with Double-Mirror Two-Dimensional Bragg Resonators.

On the Spin States of Electrons in a Double Quantum Dot in a Two-Dimensional Topological Insulator with Spin-Orbit Interaction.

Computational and Experimental Simulation of Static Memory Cells of Submicron Microcircuits under the Effect of Neutron Fluxes.

Second-Harmonic Generation of Subterahertz Gyrotron Radiation by Frequency Doubling in InP:Fe and Its Application for Magnetospectroscopy of Semiconductor Structures.

Hyperfine Interaction and Shockley–Read–Hall Recombination in Semiconductors.

On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures.

Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond.

Spectra of Double Acceptors in Layers of Barriers and Quantum Wells of HgTe/CdHgTe Heterostructures.

Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.

On the Specific Features of the Plasma-Assisted MBE Synthesis of n<sup>+</sup>-GaN Layers on GaN/c-Al<sub>2</sub>O<sub>3</sub> Templates.

On the Suppression of Electron-Hole Exchange Interaction in a Reservoir of Nonradiative Excitons.

Lateral Energy Transfer by Plasmons Excited by a Terahertz Wave in a Periodic Spatially Asymmetric Graphene Structure.

In-situ Doping of Thermoelectric Materials Based on SiGe Solid Solutions during Their Synthesis by the Spark Plasma Sintering Technique.

Study of the Auger Recombination Energy Threshold in a Series of Waveguide Heterostructures with HgTe/Cd<sub>0.7</sub>Hg<sub>0.3</sub>Te QWs Near 14 μm.

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates.