Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 7

Results: 24

Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 947, doi. 10.1134/S1063782619070236

By:

Talyzin, I. V.;
Samsonov, M. V.;
Samsonov, V. M.;
Pushkar, M. Yu.;
Dronnikov, V. V.

Publication type:

Article

Orientation Relationships upon the Structural Transformation of Monoclinic and Cubic Phases in Silver Sulfide.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 941, doi. 10.1134/S1063782619070212

By:

Sadovnikov, S. I.;
Rempel, A. A.

Publication type:

Article

Epitaxial Carbyne: Analytical Results.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 954, doi. 10.1134/S1063782619070078

By:

Davydov, S. Yu.

Publication type:

Article

Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 936, doi. 10.1134/S1063782619070108

By:

Guseva, E. A.;
Forsh, E. A.

Publication type:

Article

Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 930, doi. 10.1134/S1063782619070248

By:

Vasilyeva, G. Yu.;
Greshnov, A. A.;
Vasilyev, Yu. B.;
Mikhailov, N. N.;
Usikova, A. A.;
Haug, R. J.

Publication type:

Article

Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 993, doi. 10.1134/S1063782619070224

By:

Seredin, P. V.;
Lenshin, A. S.;
Zolotukhin, D. S.;
Goloshchapov, D. L.;
Mizerov, A. M.;
Arsentyev, I. N.;
Beltyukov, A. N.

Publication type:

Article

Properties of Semipolar GaN Grown on a Si(100) Substrate.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 989, doi. 10.1134/S1063782619070054

By:

Bessolov, V. N.;
Konenkova, E. V.;
Orlova, T. A.;
Rodin, S. N.;
Seredova, N. V.;
Solomnikova, A. V.;
Shcheglov, M. P.;
Kibalov, D. S.;
Smirnov, V. K.

Publication type:

Article

Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 979, doi. 10.1134/S1063782619070182

By:

Orlov, L. K.;
Ivina, N. L.;
Bozhenkin, V. A.

Publication type:

Article

Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 975, doi. 10.1134/S1063782619070133

By:

Korolkov, O. M.;
Kozlovski, V. V.;
Lebedev, A. A.;
Sleptsuk, N.;
Toompuu, J.;
Rang, T.

Publication type:

Article

High-Voltage Diffused Step Recovery Diodes: II. Theory.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 969, doi. 10.1134/S1063782619070157

By:

Kyuregyan, A. S.

Publication type:

Article

High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 962, doi. 10.1134/S1063782619070145

By:

Kyuregyan, A. S.

Publication type:

Article

On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 923, doi. 10.1134/S106378261907008X

By:

Domashevskaya, E. P.;
Goloshchapov, D. L.;
Dambos, Al Khailani Hasan Ismail;
Rudnev, E. V.;
Grechkina, M. V.;
Ryabtsev, S. V.

Publication type:

Article

Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 906, doi. 10.1134/S1063782619070091

By:

Guseynov, R. R.;
Tanriverdiyev, V. A.;
Belenky, G. L.;
Kipshidze, G.;
Aliyeva, Y. N.;
Aliguliyeva, Kh. V.;
Alizade, E. G.;
Ahmadova, Kh. N.;
Abdullayev, N. A.;
Mamedov, N. T.;
Zverev, V. N.

Publication type:

Article

Spherical Distributed Bragg Reflector with an Omnidirectional Stop Band in the Near-IR Spectral Range.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 901, doi. 10.1134/S1063782619070170

By:

Medvedev, A. V.;
Dukin, A. A.;
Feoktistov, N. A.;
Golubev, V. G.

Publication type:

Article

On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 919, doi. 10.1134/S1063782619070194

By:

Podgornykh, S. M.;
Yakunin, M. V.;
Krishtopenko, S. S.;
Popov, M. R.;
Mikhailov, N. N.;
Dvoretskii, S. A.

Publication type:

Article

Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 911, doi. 10.1134/S1063782619070042

By:

Badikova, P. V.;
Glazov, S. Yu.;
Syrodoev, G. A.

Publication type:

Article

New Direction in the Application of Thermoelectric Energy Converters.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 861, doi. 10.1134/S1063782619070066

By:

Dashevsky, Z. M.;
Konstantinov, P. P.;
Skipidarov, S. Ya.

Publication type:

Article

Theoretical Modeling of the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 865, doi. 10.1134/S1063782619070030

By:

Ashim, Ye. Zh.;
Inerbaev, T. M.;
Akilbekov, A. T.;
Miki, H.;
Takagi, T.;
Khovaylo, V. V.

Publication type:

Article

Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 892, doi. 10.1134/S1063782619070169

By:

Lebedev, M. V.;
Lvova, T. V.;
Shakhmin, A. L.;
Rakhimova, O. V.;
Dementev, P. A.;
Sedova, I. V.

Publication type:

Article

Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 882, doi. 10.1134/S106378261907025X

By:

Yurasov, D. V.;
Baidakova, N. A.;
Drozdov, M. N.;
Morozova, E. E.;
Kalinnikov, M. A.;
Novikov, A. V.

Publication type:

Article

On the Properties of Isoparametric AlInGaAsP/InP Heterostructures.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 887, doi. 10.1134/S1063782619070029

By:

Alfimova, D. L.;
Lunin, L. S.;
Lunina, M. L.;
Pashchenko, A. S.;
Danilina, E. M.

Publication type:

Article

On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 872, doi. 10.1134/S1063782619070121

By:

Kazanin, M. M.;
Kaminski, V. V.;
Grevtsev, M. A.

Publication type:

Article

Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 875, doi. 10.1134/S1063782619070200

By:

Prokofieva, L. V.;
Konstantinov, P. P.

Publication type:

Article

Thermoelectric Intensifier of Heat Transfer between Two Moving Media with Different Temperatures.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 869, doi. 10.1134/S106378261907011X

By:

Kadirova, D. K.

Publication type:

Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 7

Size Dependence of the Melting Point of Silicon Nanoparticles: Molecular Dynamics and Thermodynamic Simulation.

Orientation Relationships upon the Structural Transformation of Monoclinic and Cubic Phases in Silver Sulfide.

Epitaxial Carbyne: Analytical Results.

Dependence of the Conductivity of Porous Silicon Layers on the Carrier-Transport Direction.

Magnetotransport Spectroscopy of the Interface, Quantum Well, and Hybrid States in Structures with 16-nm-Thick Multiple HgTe Layers.

Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of A<sup>III</sup>N/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy.

Properties of Semipolar GaN Grown on a Si(100) Substrate.

Features of the Initial Stage of the Heteroepitaxy of Silicon Layers on Germanium When Grown from Silicon Hydrides.

Low-Temperature Annealing of Lightly Doped n-4H-SiC Layers after Irradiation with Fast Electrons.

High-Voltage Diffused Step Recovery Diodes: II. Theory.

High-Voltage Diffused Step Recovery Diodes: I. Numerical Simulation.

On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure.

Electrical and Optical Properties of Unrelaxed InAs<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> Heteroepitaxial Structures.

Spherical Distributed Bragg Reflector with an Omnidirectional Stop Band in the Near-IR Spectral Range.

On the Thermal Activation of Conductivity Electrons in a p-Type HgTe/CdHgTe Double Quantum Well with HgTe Layers of Critical Width.

Differences in the Impurity Ionization in Quasi-Classically Strong Constant and Alternating Electric Fields in a Two-Dimensional Superlattice Based on Graphene.

New Direction in the Application of Thermoelectric Energy Converters.

Theoretical Modeling of the Thermoelectric Properties of Fe<sub>2</sub>Ti<sub>1 –</sub><sub>x</sub>V<sub>x</sub>Sn Heusler Alloys.

Development of the Physicochemical Properties of the GaSb(100) Surface in Ammonium Sulfide Solutions.

Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium.

On the Properties of Isoparametric AlInGaAsP/InP Heterostructures.

On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide.

Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint.

Thermoelectric Intensifier of Heat Transfer between Two Moving Media with Different Temperatures.