Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 6

Results: 28

Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 853, doi. 10.1134/S1063782619060113
By:
- Maskaeva, L. N.;
- Fedorova, E. A.;
- Markov, V. F.;
- Kuznetsov, M. V.;
- Lipina, O. A.
Publication type:
Article
Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 850, doi. 10.1134/S106378261906006X
By:
- Ivanov, P. A.;
- Kudoyarov, M. F.;
- Potapov, A. S.;
- Samsonova, T. P.
Publication type:
Article
Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 844, doi. 10.1134/S1063782619060071
By:
- Kalinina, E. V.;
- Violina, G. N.;
- Nikitina, I. P.;
- Yagovkina, M. A.;
- Ivanova, E. V.;
- Zabrodski, V. V.
Publication type:
Article
Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 838, doi. 10.1134/S1063782619060198
By:
- Shashkina, A. S.;
- Hanin, S. D.
Publication type:
Article
Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 833, doi. 10.1134/S1063782619060034
By:
- Banshchikov, A. G.;
- Illarionov, Yu. Yu.;
- Vexler, M. I.;
- Wachter, S.;
- Sokolov, N. S.
Publication type:
Article
Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 828, doi. 10.1134/S1063782619060162
By:
- Podoskin, A. A.;
- Romanovich, D. N.;
- Shashkin, I. S.;
- Gavrina, P. S.;
- Sokolova, Z. N.;
- Slipchenko, S. O.;
- Pikhtin, N. A.
Publication type:
Article
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 822, doi. 10.1134/S1063782619060174
By:
- Romanov, V. V.;
- Belykh, I. A.;
- Ivanov, E. V.;
- Alekseev, P. A.;
- Il'inskaya, N. D.;
- Yakovlev, Yu. P.
Publication type:
Article
Urbach Rule in MnGa2Se4 Single Crystals Upon Optical Absorption.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 819, doi. 10.1134/S1063782619060137
By:
- Niftiyev, N. N.
Publication type:
Article
Optically Induced Charge Exchange in ZnO-Based Composite Structures with Embedded CsPbBr3 Nanocrystals.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 814, doi. 10.1134/S1063782619060058
By:
- Drozdov, K. A.;
- Krylov, I. V.;
- Chizhov, A. S.;
- Rumyantseva, M. N.;
- Ryabova, L. I.;
- Khokhlov, D. R.
Publication type:
Article
Specific Features of Carrier Transport in n+–n0–n+ Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 806, doi. 10.1134/S1063782619060241
By:
- Slipchenko, S. O.;
- Podoskin, A. A.;
- Soboleva, O. S.;
- Yuferev, V. S.;
- Golovin, V. S.;
- Gavrina, P. S.;
- Romanovich, D. N.;
- Miroshnikov, I. V.;
- Pikhtin, N. A.
Publication type:
Article
Features of Defect Formation in Nanostructured Silicon under Ion Irradiation.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 800, doi. 10.1134/S1063782619060095
By:
- Kozhemiako, A. V.;
- Evseev, A. P.;
- Balakshin, Yu. V.;
- Shemukhin, A. A.
Publication type:
Article
Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 795, doi. 10.1134/S106378261906023X
By:
- Sitnikov, S. V.;
- Rodyakina, E. E.;
- Latyshev, A. V.
Publication type:
Article
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 789, doi. 10.1134/S1063782619060290
By:
- Yarykin, N.;
- Shuman, V. B.;
- Portsel, L. M.;
- Lodygin, A. N.;
- Astrov, Yu. A.;
- Abrosimov, N. V.;
- Weber, J.
Publication type:
Article
Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 784, doi. 10.1134/S1063782619060125
By:
- Morozova, N. K.;
- Miroshnikova, I. N.;
- Galstyan, V. G.
Publication type:
Article
Thick α-Ga2O3 Layers on Sapphire Substrates Grown by Halide Epitaxy.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 780, doi. 10.1134/S1063782619060150
By:
- Pechnikov, A. I.;
- Stepanov, S. I.;
- Chikiryaka, A. V.;
- Scheglov, M. P.;
- Odnobludov, M. A.;
- Nikolaev, V. I.
Publication type:
Article
Structure and Thermoelectric Properties of CoSi-Based Film Composites.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 775, doi. 10.1134/S1063782619060101
By:
- Kuznetsova, V. S.;
- Novikov, S. V.;
- Nichenametla, C. K.;
- Calvo, J.;
- Wagner-Reetz, M.
Publication type:
Article
Simulation of Thermoelectric Materials Densification during Spark Plasma Sintering with the Example of Ge–Si.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 772, doi. 10.1134/S1063782619060289
By:
- Tukmakova, A. S.;
- Samusevich, K. L.;
- Novotelnova, A. V.;
- Tkhorzhevskiy, I. L.;
- Makarova, E. S.
Publication type:
Article
Influence of V Doping on the Thermoelectric Properties of Fe2Ti1 –xVxSn Heusler Alloys.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 768, doi. 10.1134/S1063782619060277
By:
- Taranova, A. I.;
- Novitskii, A. P.;
- Voronin, A. I.;
- Taskaev, S. V.;
- Khovaylo, V. V.
Publication type:
Article
Correlation of the Optical and Magnetic Properties of Bi2Te3–Sb2Te3 Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 765, doi. 10.1134/S1063782619060265
By:
- Stepanov, N. P.;
- Gilfanov, A. K.;
- Trubitsyna, E. N.
Publication type:
Article
On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 761, doi. 10.1134/S1063782619060253
By:
- Solomkin, F. Yu.;
- Orekhov, A. S.;
- Novikov, S. V.;
- Arkharova, N. A.;
- Isachenko, G. N.;
- Zaitseva, N. V.;
- Sharenkova, N. V.;
- Samunin, A. U.;
- Klechkovskaya, V. V.;
- Burkov, A. T.
Publication type:
Article
Thermoelectric and Thermoelectrokinetic Phenomena in Colloidal Solutions.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 756, doi. 10.1134/S1063782619060228
By:
- Sidorov, A. V.;
- Grabov, V. M.;
- Zaitsev, A. A.;
- Kuznetsov, D. V.
Publication type:
Article
Cryogenic Thermoelectric Cooler for Operating Temperatures below 90 K.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 752, doi. 10.1134/S1063782619060216
By:
- Sidorenko, N. A.;
- Dashevsky, Z. M.
Publication type:
Article
Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 747, doi. 10.1134/S1063782619060204
By:
- Shupenev, A. E.;
- Korshunov, I. S.;
- Iliin, A. S.;
- Osipkov, A. S.;
- Grigoryants, A. G.
Publication type:
Article
Thermoelectric Properties of Nanocomposite Bi0.45Sb1.55Te2.985 Solid Solution with SiO2 Microparticles.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 742, doi. 10.1134/S1063782619060186
By:
- Shabaldin, A. A.;
- Konstantinov, P. P.;
- Kurdyukov, D. A.;
- Lukyanova, L. N.;
- Samunin, A. Yu.;
- Stovpiaga, E. Yu.;
- Burkov, A. T.
Publication type:
Article
Galvanomagnetic Properties of Cobalt Monosilicide and Alloys Based on It.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 737, doi. 10.1134/S1063782619060149
By:
- Ovchinnikov, A. Yu.;
- Konstantinov, P. P.;
- Pshenay-Severin, D. A.;
- Burkov, A. T.
Publication type:
Article
On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 732, doi. 10.1134/S1063782619060083
By:
- Korobeinikov, I. V.;
- Morozova, N. V.;
- Lukyanova, L. N.;
- Usov, O. A.;
- Ovsyannikov, S. V.
Publication type:
Article
Specific Features of the Quantum-Size Effect in Transport Phenomena in Bismuth-Thin Films on Mica Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 727, doi. 10.1134/S1063782619060046
By:
- Demidov, E. V.;
- Grabov, V. M.;
- Komarov, V. A.;
- Krushelnitckii, A. N.;
- Suslov, A. V.;
- Suslov, M. V.
Publication type:
Article
Effect of Sample-Shape Imperfection on Uncertainty in Measurements of the Thermal-Conductivity by the Laser-Flash Method.
Published in:
Semiconductors, 2019, v. 53, n. 6, p. 723, doi. 10.1134/S1063782619060022
By:
- Asach, A. V.;
- Isachenko, G. N.;
- Novotelnova, A. V.;
- Fomin, V. E.;
- Samusevich, K. L.;
- Tkhorgevskii, I. L.
Publication type:
Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 6

Composition, Structure, and Semiconductor Properties of Chemically Deposited SnSe Films.

Correction of the Reverse Recovery Characteristics of High-Voltage 4H-SiC Junction Diodes Using Proton Irradiation.

Proton Irradiation of 4H-SiC Photodetectors with Schottky Barriers.

Simulation Approach to Modeling of the Avalanche Breakdown of a p–n Junction.

Trends in Reverse-Current Change in Tunnel MIS Diodes with Calcium Fluoride on Si(111) Upon the Formation of an Extra Oxide Layer.

Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers.

Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO<sub>2</sub> (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection.

Urbach Rule in MnGa<sub>2</sub>Se<sub>4</sub> Single Crystals Upon Optical Absorption.

Optically Induced Charge Exchange in ZnO-Based Composite Structures with Embedded CsPbBr<sub>3</sub> Nanocrystals.

Specific Features of Carrier Transport in n<sup>+</sup>–n<sup>0</sup>–n<sup>+</sup> Structures with a GaAs/AlGaAs Heterojunction at Ultrahigh Current Densities.

Features of Defect Formation in Nanostructured Silicon under Ion Irradiation.

Electromigration Effect on Vacancy Islands Nucleation on Si(100) Surface during Sublimation.

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals.

Analysis of the Optical Properties of Plastically Deformed ZnS(O) Using Band-Anticrossing Theory.

Thick α-Ga<sub>2</sub>O<sub>3</sub> Layers on Sapphire Substrates Grown by Halide Epitaxy.

Structure and Thermoelectric Properties of CoSi-Based Film Composites.

Simulation of Thermoelectric Materials Densification during Spark Plasma Sintering with the Example of Ge–Si.

Influence of V Doping on the Thermoelectric Properties of Fe<sub>2</sub>Ti<sub>1 –</sub><sub>x</sub>V<sub>x</sub>Sn Heusler Alloys.

Correlation of the Optical and Magnetic Properties of Bi<sub>2</sub>Te<sub>3</sub>–Sb<sub>2</sub>Te<sub>3</sub> Crystals.

On the Structure and Thermoelectric Properties of CoSi Obtained from a Supersaturated Solution–Melt in Sn.

Thermoelectric and Thermoelectrokinetic Phenomena in Colloidal Solutions.

Cryogenic Thermoelectric Cooler for Operating Temperatures below 90 K.

Bismuth-Telluride-Based Radiation Thermopiles Prepared by Pulsed Laser Deposition.

Thermoelectric Properties of Nanocomposite Bi<sub>0.45</sub>Sb<sub>1.55</sub>Te<sub>2.985</sub> Solid Solution with SiO<sub>2</sub> Microparticles.

Galvanomagnetic Properties of Cobalt Monosilicide and Alloys Based on It.

On the Power Factor of Bismuth-Telluride-Based Alloys near Topological Phase Transitions at High Pressures.

Specific Features of the Quantum-Size Effect in Transport Phenomena in Bismuth-Thin Films on Mica Substrates.

Effect of Sample-Shape Imperfection on Uncertainty in Measurements of the Thermal-Conductivity by the Laser-Flash Method.