Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 5

Results: 29

Hydrogen Desorption from Pentagraphane.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 717, doi. 10.1134/S106378261905021X
By:
- Openov, L. A.;
- Podlivaev, A. I.
Publication type:
Article
Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 711, doi. 10.1134/S1063782619050166
By:
- Marchenko, A. V.;
- Seregin, P. P.;
- Terukov, E. I.;
- Shakhovich, K. B.
Publication type:
Article
Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 703, doi. 10.1134/S1063782619050026
By:
- Abramkin, D. S.;
- Shamirzaev, T. S.
Publication type:
Article
On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 699, doi. 10.1134/S106378261905004X
By:
- Davydov, S. Yu.
Publication type:
Article
Setup for Measuring the Thermoelectric Properties of Ultrathin Wires.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 695, doi. 10.1134/S1063782619050270
By:
- Uryupin, O. N.;
- Shabaldin, A. A.
Publication type:
Article
Materials Based on Solid Solutions of Bismuth Chalcogenides of n-Type Conductivity Prepared by Melt Crystallization in a Liquid.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 691, doi. 10.1134/S1063782619050087
By:
- Ivanova, L. D.;
- Granatkina, Yu. V.;
- Malchev, A. G.;
- Nikhezina, I. Yu.;
- Emel'yanov, M. V.;
- Nikulin, D. S.
Publication type:
Article
Effective Bi–Sb Crystals for Thermoelectric Cooling at Temperatures of T ≲ 180 K.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 686, doi. 10.1134/S1063782619050245
By:
- Sidorenko, N. A.;
- Dashevsky, Z. M.
Publication type:
Article
High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 682, doi. 10.1134/S1063782619050130
By:
- Kuzanyan, A. S.;
- Kuzanyan, A. A.;
- Gurin, V. N.;
- Volkov, M. P.;
- Nikoghosyan, V. R.
Publication type:
Article
Topological Surface States of Dirac Fermions in n-Bi2Te3 –ySey Thermoelectrics.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 647, doi. 10.1134/S1063782619050142
By:
- Lukyanova, L. N.;
- Makarenko, I. V.;
- Usov, O. A.;
- Dementev, P. A.
Publication type:
Article
Coefficient of the Performance of a Segmented Thermoelectric Cooling Leg.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 678, doi. 10.1134/S1063782619050051
By:
- Drabkin, I. A.
Publication type:
Article
Thermoelectric Properties of Cobalt Monosilicide and Its Alloys.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 667, doi. 10.1134/S1063782619050038
By:
- Antonov, A. S.;
- Novikov, S. V.;
- Pshenay-Severin, D. A.;
- Burkov, A. T.
Publication type:
Article
Miniaturized Heat-Flux Sensor Based on a Glass-Insulated Bi–Sn Microwire.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 662, doi. 10.1134/S1063782619050117
By:
- Konopko, L. A.;
- Nikolaeva, A. A.;
- Huber, T. E.;
- Kobylianskaya, A. K.
Publication type:
Article
Thermoelectric Properties of Semimetal and Semiconductor Bi1 –xSbx Foils and Wires.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 657, doi. 10.1134/S1063782619050191
By:
- Nikolaeva, A.;
- Konopko, L.;
- Gherghishan, I.;
- Rogacki, K.;
- Stachowiak, P.;
- Jezowski, A.;
- Shepelevich, V.;
- Prokoshin, V.;
- Gusakova, S.
Publication type:
Article
Materials Based on Solid Solutions of Bismuth and Antimony Tellurides Formed by Rapid Melt Crystallization Methods.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 652, doi. 10.1134/S1063782619050099
By:
- Ivanova, L. D.;
- Granatkina, Yu. V.;
- Malchev, A. G.;
- Nikhezina, I. Yu.;
- Emel'yanov, M. V.
Publication type:
Article
Thermoelectric Properties of Bi2 –xLuxTe2.7Se0.3 Solid Solutions.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 673, doi. 10.1134/S1063782619050282
By:
- Vasil'ev, A. E.;
- Yapryntsev, M. N.;
- Ivanov, O. N.;
- Zhezhu, M. V.
Publication type:
Article
Thermoelectric Power of a Luttinger Liquid.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 641, doi. 10.1134/S1063782619050075
By:
- Ivanov, Yu. V.;
- Uryupin, O. N.
Publication type:
Article
Thermoelectric Properties of Sb2Te3-Based Nanocomposites with Graphite.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 638, doi. 10.1134/S1063782619050129
By:
- Kulbachinskii, V. A.;
- Kytin, V. G.;
- Zinoviev, D. A.;
- Maslov, N. V.;
- Singha, P.;
- Das, S.;
- Banerjee, A.
Publication type:
Article
Variation in the State of 119mSn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of 119mTe/119Sb Isotopes.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 633, doi. 10.1134/S1063782619050233
By:
- Seregin, P. P.;
- Marchenko, A. V.;
- Nasredinov, F. S.;
- Zharkoy, A. B.
Publication type:
Article
Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔTmax Mode.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 628, doi. 10.1134/S1063782619050178
By:
- Melnikov, A. A.;
- Tarasov, O. M.;
- Chekov, A. V.;
- Bashkin, M. A.
Publication type:
Article
Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 624, doi. 10.1134/S1063782619050221
By:
- Pankratova, D. S.;
- Novitskii, A. P.;
- Kuskov, K. V.;
- Sergienko, I. A.;
- Leybo, D. V.;
- Burkov, A. T.;
- Konstantinov, P. P.;
- Khovaylo, V. V.
Publication type:
Article
Thermoelectric and Galvanomagnetic Properties of Layered n-Bi2 –xSbxTe3 –ySey Films.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 620, doi. 10.1134/S1063782619050154
By:
- Lukyanova, L. N.;
- Usov, O. A.;
- Volkov, M. P.
Publication type:
Article
Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi1.9Gd0.1Te3 Compound.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 615, doi. 10.1134/S1063782619050300
By:
- Yapryntsev, M. N.;
- Vasiliev, A. E.;
- Ivanov, O. N.
Publication type:
Article
Thermoelectric Properties of In0.2Ce0.1Co4Sb12.3 Ribbons Prepared by the Rapid-Quenching Technique.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 583, doi. 10.1134/S1063782619050208
By:
- Novikov, S. V.;
- Burkov, A. T.;
- Tang, X.;
- Yan, Y.;
- Orekhov, A. S.
Publication type:
Article
The Band-Structure Parameters of Bi1 –xSbx (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 611, doi. 10.1134/S1063782619050269
By:
- Suslov, A.V.;
- Grabov, V. M.;
- Komarov, V. A.;
- Demidov, E. V.;
- Senkevich, S. V.;
- Suslov, M. V.
Publication type:
Article
On the Band Structure of Bi2Te3.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 603, doi. 10.1134/S106378261905018X
By:
- Nemov, S. A.;
- Ulashkevich, Yu. V.;
- Rulimov, A. A.;
- Demchenko, A. E.;
- Allahkhah, A. A.;
- Sveshnikov, I. V.;
- Dzhafarov, M.
Publication type:
Article
Miniature Thermoelectric Modules Developed for Cycling Applications.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 599, doi. 10.1134/S1063782619050294
By:
- Volkov, M. P.;
- Drabkin, I. A.;
- Ershova, L. B.;
- Nazarenko, A. A.
Publication type:
Article
The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 593, doi. 10.1134/S1063782619050105
By:
- Komarov, V. A.;
- Grabov, V. M.;
- Suslov, A. V.;
- Kablukova, N. S.;
- Suslov, M. V.
Publication type:
Article
The Thermoelectric Power of Bi1 –xSbx Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 589, doi. 10.1134/S1063782619050257
By:
- Suslov, M. V.;
- Grabov, V. M.;
- Komarov, V. A.;
- Demidov, E. V.;
- Senkevich, S. V.;
- Suslov, A. V.
Publication type:
Article
Thermoelectric Properties of n-Mg2(SiGe)0.8Sn0.2 Solid Solution.
Published in:
Semiconductors, 2019, v. 53, n. 5, p. 607, doi. 10.1134/S1063782619050063
By:
- Isachenko, G. N.;
- Samunin, A. Yu.;
- Konstantinov, P. P.;
- Kasyanov, A. A.;
- Masalimov, A.
Publication type:
Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 5

Hydrogen Desorption from Pentagraphane.

Antisite Defects in Ge–Te and Ge–As–Te Semiconductor Glasses.

Type-I Indirect-Gap Semiconductor Heterostructures on (110) Substrates.

On Estimates of the Electron Affinity of Silicon-Carbide Polytypes and the Band Offsets in Heterojunctions Based on These Polytypes.

Setup for Measuring the Thermoelectric Properties of Ultrathin Wires.

Materials Based on Solid Solutions of Bismuth Chalcogenides of n-Type Conductivity Prepared by Melt Crystallization in a Liquid.

Effective Bi–Sb Crystals for Thermoelectric Cooling at Temperatures of T ≲ 180 K.

High-Efficiency Thermoelectric Single-Photon Detector Based on Lanthanum and Cerium Hexaborides.

Topological Surface States of Dirac Fermions in n-Bi<sub>2</sub>Te<sub>3 –</sub><sub>y</sub>Se<sub>y</sub> Thermoelectrics.

Coefficient of the Performance of a Segmented Thermoelectric Cooling Leg.

Thermoelectric Properties of Cobalt Monosilicide and Its Alloys.

Miniaturized Heat-Flux Sensor Based on a Glass-Insulated Bi–Sn Microwire.

Thermoelectric Properties of Semimetal and Semiconductor Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> Foils and Wires.

Materials Based on Solid Solutions of Bismuth and Antimony Tellurides Formed by Rapid Melt Crystallization Methods.

Thermoelectric Properties of Bi<sub>2 –</sub><sub>x</sub>Lu<sub>x</sub>Te<sub>2.7</sub>Se<sub>0.3</sub> Solid Solutions.

Thermoelectric Power of a Luttinger Liquid.

Thermoelectric Properties of Sb<sub>2</sub>Te<sub>3</sub>-Based Nanocomposites with Graphite.

Variation in the State of <sup>119m</sup>Sn Impurity Atoms in PbTe during the Establishment of the Radioactive Equilibrium of <sup>119m</sup>Te/<sup>119</sup>Sb Isotopes.

Dimensionless Mathematical Model of a Thermoelectric Cooler: ΔT<sub>max</sub> Mode.

Influence of La Doping on the Transport Properties of Bi<sub>1 –</sub><sub>x</sub>La<sub>x</sub>CuSeO Oxyselenides.

Thermoelectric and Galvanomagnetic Properties of Layered n-Bi<sub>2 –</sub><sub>x</sub>Sb<sub>x</sub>Te<sub>3 –</sub><sub>y</sub>Se<sub>y</sub> Films.

Influence of the Sintering Temperature on the Thermoelectric Properties of the Bi<sub>1.9</sub>Gd<sub>0.1</sub>Te<sub>3</sub> Compound.

Thermoelectric Properties of In<sub>0.2</sub>Ce<sub>0.1</sub>Co<sub>4</sub>Sb<sub>12.3</sub> Ribbons Prepared by the Rapid-Quenching Technique.

The Band-Structure Parameters of Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> (0 ≤ x ≤ 0.15) Thin Films on Substrates with Different Thermal-Expansion Coefficients.

On the Band Structure of Bi<sub>2</sub>Te<sub>3</sub>.

Miniature Thermoelectric Modules Developed for Cycling Applications.

The Hall and Seebeck Effects in Bismuth Thin Films on Mica Substrates in the Temperature Range of 77–300 K.

The Thermoelectric Power of Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub> Films (0 ≤ x ≤ 0.15) on Mica and Polyimide Substrates in the Temperature Range of 77–300 K.

Thermoelectric Properties of n-Mg<sub>2</sub>(SiGe)<sub>0.8</sub>Sn<sub>0.2</sub> Solid Solution.