Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 4

Results: 27

Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 573, doi. 10.1134/S106378261904016X

By:

Kumar, B. Rajesh;
Hymavathi, B.

Publication type:

Article

Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 566, doi. 10.1134/S1063782619040274

By:

Zharova, Yu. A.;
Tolmachev, V. A.;
Pavlov, S. I.

Publication type:

Article

Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 552, doi. 10.1134/S1063782619040158

By:

Kononov, N. N.;
Davydova, D. V.;
Bubenov, S. S.;
Dorofeev, S. G.

Publication type:

Article

Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 545, doi. 10.1134/S1063782619040080

By:

Dobrov, V. A.;
Kozlovski, V. V.;
Mescheryakov, A. V.;
Usychenko, V. G.;
Chernova, A. S.;
Shabunina, E. I.;
Shmidt, N. M.

Publication type:

Article

Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 540, doi. 10.1134/S1063782619040213

By:

Nikolskaia, A. B.;
Kozlov, S. S.;
Vildanova, M. F.;
Shevaleevskiy, O. I.

Publication type:

Article

Formation of Porous Silicon by Nanopowder Sintering.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 530, doi. 10.1134/S1063782619040031

By:

Astrova, E. V.;
Voronkov, V. B.;
Nashchekin, A. V.;
Parfeneva, A. V.;
Lozhkina, D. A.;
Tomkovich, M. V.;
Kukushkina, Yu. A.

Publication type:

Article

Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 524, doi. 10.1134/S1063782619040110

By:

Gorbatyuk, A. V.;
Ivanov, B. V.

Publication type:

Article

High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 519, doi. 10.1134/S1063782619040183

By:

Kyuregyan, A. S.

Publication type:

Article

Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 511, doi. 10.1134/S1063782619040171

By:

Kyuregyan, A. S.

Publication type:

Article

The Growth of InAsxSb1 –x Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 503, doi. 10.1134/S1063782619040092

By:

Emelyanov, E. A.;
Vasev, A. V.;
Semyagin, B. R.;
Yesin, M. Yu.;
Loshkarev, I. D.;
Vasilenko, A. P.;
Putyato, M. A.;
Petrushkov, M. O.;
Preobrazhenskii, V. V.

Publication type:

Article

Optical Properties of CdSe/ZnS Nanoparticles in Heat-Treated Polyvinylchloride Films.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 499, doi. 10.1134/S1063782619040249

By:

Rasmagin, S. I.;
Novikov, I. K.

Publication type:

Article

Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 493, doi. 10.1134/S1063782619040262

By:

Tyschenko, I. E.;
Volodin, V. A.;
Popov, V. P.

Publication type:

Article

Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 489, doi. 10.1134/S1063782619040067

By:

Jyoti Chaudhary;
Choudhary, Shaily;
Negi, Chandra Mohan Singh;
Gupta, Saral K.;
Verma, Ajay Singh

Publication type:

Article

Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 484, doi. 10.1134/S1063782619040146

By:

Khmissi, H.;
El Sayed, A. M.

Publication type:

Article

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 477, doi. 10.1134/S106378261904002X

By:

Aslanyan, A. E.;
Avakyants, L. P.;
Bokov, P. Yu.;
Chervyakov, A. V.

Publication type:

Article

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n+–n-Si Diffusion Silicon Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 469, doi. 10.1134/S1063782619040055

By:

Belyaev, A. E.;
Boltovets, N. S.;
Klad'ko, V. P.;
Safryuk-Romanenko, N. V.;
Lubchenko, A. I.;
Sheremet, V. N.;
Shynkarenko, V. V.;
Slepova, A. S.;
Pilipenko, V. A.;
Petlitskaya, T. V.;
Pilipchuk, A. S.;
Konakova, R. V.;
Sachenko, A. V.

Publication type:

Article

Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 465, doi. 10.1134/S1063782619040109

By:

Goldman, E. I.;
Levashov, S. A.;
Chucheva, G. V.

Publication type:

Article

Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 458, doi. 10.1134/S1063782619040134

By:

Karpunin, V. V.;
Margulis, V. A.

Publication type:

Article

Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 452, doi. 10.1134/S1063782619040122

By:

Kalygina, V. M.;
Lygdenova, T. Z.;
Petrova, Yu. S.;
Chernikov, E. V.

Publication type:

Article

Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 419, doi. 10.1134/S1063782619040079

By:

Dmitriev, A. V.

Publication type:

Article

Simulated Contrast of Two Dislocations.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 442, doi. 10.1134/S1063782619040195

By:

Ledra, M.;
El Hdiy, A.

Publication type:

Article

Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 439, doi. 10.1134/S1063782619040201

By:

Nabiullin, I. R.;
Gadiev, R. M.;
Lachinov, A. N.

Publication type:

Article

Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 434, doi. 10.1134/S1063782619040237

By:

Petrov, A. S.;
Sitnikov, S. V.;
Kosolobov, S. S.;
Latyshev, A. V.

Publication type:

Article

Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 428, doi. 10.1134/S1063782619040043

By:

Bazhenov, N. L.;
Mynbaev, K. D.;
Semakova, A. A.;
Zegrya, G. G.

Publication type:

Article

Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 447, doi. 10.1134/S1063782619040286

By:

Kumar, K. Deva Arun;
Valanarasu, S.;
Rosario, S. Rex

Publication type:

Article

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 415, doi. 10.1134/S1063782619040250

By:

Sobolev, N. A.;
Sakharov, V. I.;
Serenkov, I. T.;
Bondarev, A. D.;
Karabeshkin, K. V.;
Fomin, E. V.;
Kalyadin, A. E.;
Mikoushkin, V. M.;
Shek, E. I.;
Sherstnev, E. V.

Publication type:

Article

Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 411, doi. 10.1134/S1063782619040225

By:

Orlov, V. I.;
Yarykin, N. A.;
Yakimov, E. B.

Publication type:

Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 4

Effect of Oxygen Flow Rate on Structural, Electrical and Optical Properties of Zinc Aluminum Oxide Thin Films Deposited by DC Magnetron Sputtering.

Optical and Structural Properties of Ag and c-Si Nanostructures Formed During the Metal-Assisted Chemical Etching of Silicon.

Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols.

Effect of Electron Irradiation with an Energy of 0.9 MeV on the I–V Characteristics and Low-Frequency Noise in 4H–SiC pin Diodes.

Power Conversion Efficiencies of Perovskite and Dye-Sensitized Solar Cells under Various Solar Radiation Intensities.

Formation of Porous Silicon by Nanopowder Sintering.

Inhomogeneous Injection and Heat-Transfer Processes in Reversely Switched Dynistors Operating in the Pulse-Frequency Repetition Modes with a Limited Heat Sink.

High-Power Nano- and Picosecond Optoelectronic Switches Based on High-Voltage Silicon Structures with p–n Junctions. III. Self-Heating Effects.

Large-Amplitude Shock Electromagnetic Wave in a Nonlinear Transmission Line Based on a Distributed Semiconductor Diode.

The Growth of InAs<sub>x</sub>Sb<sub>1 –</sub><sub>x</sub> Solid Solutions on Misoriented GaAs(001) Substrates by Molecular-Beam Epitaxy.

Optical Properties of CdSe/ZnS Nanoparticles in Heat-Treated Polyvinylchloride Films.

Raman Scattering in InSb Spherical Nanocrystals Ion-Synthesized in Silicon-Oxide Films.

Electrical Characterization of Hybrid Halide Perovskites Based Heterojunction Device.

Quantum Confined Stark Effect and Temperature Dependencies of Photoluminescence of InAs Quantum Dots Coupled with AlGaAs/GaAs Two Dimensional Electron Gas.

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy.

Features of the Temperature Dependence of the Specific Contact Resistance of Au–Ti–Pd–n<sup>+</sup>–n-Si Diffusion Silicon Structures.

Features of the Characteristics of Field-Resistant Silicon–Ultrathin Oxide–Polysilicon Structures.

Resonance Absorption of Electromagnetic Radiation in a Phosphorene Single Layer.

Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures.

Thermoelectric Characteristics of Heavily Doped p-Type Lead Telluride at Different Heavy-Hole Band Depths.

Simulated Contrast of Two Dislocations.

Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures.

Evolution of Micropits on Large Terraces of the Si(111) Surface during High-Temperature Annealing.

Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies.

Preparation and Characterization of Sol–Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-Electronic Application.

Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film.

Effect of Nickel and Copper Introduced at Room Temperature on the Recombination Properties of Extended Defects in Silicon.