Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 3

Results: 22

Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 406, doi. 10.1134/S1063782619030187
By:
- Tsai, Jung-Hui;
- Lin, Pao-Sheng;
- Chen, Yu-Chi;
- Liou, Syuan-Hao;
- Niu, Jing-Shiuan
Publication type:
Article
Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 400, doi. 10.1134/S1063782619030217
By:
- Volodin, V. A.;
- Krivyakin, G. K.;
- Ivlev, G. D.;
- Prokopyev, S. L.;
- Gusakova, S. V.;
- Popov, A. A.
Publication type:
Article
Formation of Nanoporous Copper-Silicide Films.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 395, doi. 10.1134/S1063782619030059
By:
- Buchin, E. Yu.;
- Naumov, V. V.;
- Vasilyev, S. V.
Publication type:
Article
Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 388, doi. 10.1134/S1063782619030096
By:
- Kalygina, V. M.;
- Lygdenova, T. Z.;
- Novikov, V. A.;
- Petrova, Yu. S.;
- Tsymbalov, A. V.;
- Yaskevich, T. M.
Publication type:
Article
Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package).
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 385, doi. 10.1134/S1063782619030072
By:
- Ivanov, P. A.;
- Potapov, A. S.;
- Samsonova, T. P.
Publication type:
Article
Subnanosecond Avalanche Switching Simulations of n+–n–n+ Silicon Structures.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 379, doi. 10.1134/S1063782619030151
By:
- Podolska, N. I.;
- Rodin, P. B.
Publication type:
Article
EMF Induced in a p–n Junction under a Strong Microwave Field and Light.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 375, doi. 10.1134/S1063782619030060
By:
- Gulyamov, G.;
- Erkaboev, U. I.;
- Sharibaev, N. Yu.;
- Gulyamov, A. G.
Publication type:
Article
Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 368, doi. 10.1134/S1063782619030084
By:
- Kabalnov, Yu. A.;
- Trufanov, A. N.;
- Obolensky, S. V.
Publication type:
Article
Optical Properties of CdS Nanocrystals Doped with Zinc and Copper.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 361, doi. 10.1134/S1063782619030138
By:
- Nitsuk, Yu. A.;
- Kiose, M. I.;
- Vaksman, Yu. F.;
- Smyntyna, V. A.;
- Yatsunskyi, I. R.
Publication type:
Article
On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 350, doi. 10.1134/S1063782619030102
By:
- Koryakin, A. A.;
- Kukushkin, S. A.;
- Sibirev, N. V.
Publication type:
Article
Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 345, doi. 10.1134/S1063782619030023
By:
- Babichev, A. V.;
- Gladyshev, A. G.;
- Kurochkin, A. S.;
- Kolodeznyi, E. S.;
- Nevedomskii, V. N.;
- Karachinsky, L. Ya.;
- Novikov, I. I.;
- Sofronov, A. N.;
- Egorov, A. Yu.
Publication type:
Article
Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 339, doi. 10.1134/S1063782619030205
By:
- Vinichenko, A. N.;
- Safonov, D. A.;
- Kargin, N. I.;
- Vasil'evskii, I. S.
Publication type:
Article
Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 332, doi. 10.1134/S1063782619030230
By:
- Zvonkov, B. N.;
- Vikhrova, O. V.;
- Danilov, Yu. A.;
- Dorokhin, M. V.;
- Kudrin, A. V.;
- Kalentyeva, I. L.;
- Larionova, E. A.;
- Kovalskiy, V. A.;
- Soltanovich, O. A.
Publication type:
Article
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 326, doi. 10.1134/S1063782619030047
By:
- Baidus, N. V.;
- Kukushkin, V. A.;
- Nekorkin, S. M.;
- Kruglov, A. V.;
- Reunov, D. G.
Publication type:
Article
Mechanism and Features of Field Emission in Semiconductors.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 321, doi. 10.1134/S1063782619030229
By:
- Zhukov, N. D.;
- Mikhailov, A. I.;
- Mosiyash, D. S.
Publication type:
Article
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 291, doi. 10.1134/S1063782619030035
By:
- Badalova, Z. I.;
- Abdullayev, N. A.;
- Azhdarov, G. H.;
- Aliguliyeva, Kh. V.;
- Gahramanov, S. Sh.;
- Nemov, S. A.;
- Mamedov, N. T.
Publication type:
Article
Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 310, doi. 10.1134/S1063782619030114
By:
- Makhniy, V. P.;
- Vakhnyak, N. D.;
- Kinzerska, O. V.;
- Pyryatynsky, Yu. P.
Publication type:
Article
Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 304, doi. 10.1134/S106378261903014X
By:
- Novikov, G. F.;
- Rabenok, E. V.;
- Orishina, P. S.;
- Gapanovich, M. V.;
- Odin, I. N.
Publication type:
Article
Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 298, doi. 10.1134/S1063782619030199
By:
- Veinger, A. I.;
- Kochman, I. V.;
- Okulov, V. I.;
- Govorkova, T. A.;
- Andriichuk, M. D.;
- Paranchich, L. D.
Publication type:
Article
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 296, doi. 10.1134/S1063782619030175
By:
- Shuman, V. B.;
- Lodygin, A. N.;
- Portsel, L. M.;
- Yakovleva, A. A.;
- Abrosimov, N. V.;
- Astrov, Yu. A.
Publication type:
Article
Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 313, doi. 10.1134/S1063782619030163
By:
- Privezentsev, V. V.;
- Kulikauskas, V. S.;
- Skuratov, V. A.;
- Zilova, O. S.;
- Burmistrov, A. A.;
- Presnyakov, M. Yu.;
- Goryachev, A. V.
Publication type:
Article
Discovery of III–V Semiconductors: Physical Properties and Application.
Published in:
Semiconductors, 2019, v. 53, n. 3, p. 273, doi. 10.1134/S1063782619030126
By:
- Mikhailova, M. P.;
- Moiseev, K. D.;
- Yakovlev, Yu. P.
Publication type:
Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 3

Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches.

Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation.

Formation of Nanoporous Copper-Silicide Films.

Structure and Properties of Gallium-Oxide Films Produced by High-Frequency Magnetron-Assisted Deposition.

Simulation of Transient Processes in 4H-SiC Based Semiconductor Devices (Taking into Account the Incomplete Ionization of Dopants in the ATLAS Module of the SILVACO TCAD Software Package).

Subnanosecond Avalanche Switching Simulations of n<sup>+</sup>–n–n<sup>+</sup> Silicon Structures.

EMF Induced in a p–n Junction under a Strong Microwave Field and Light.

Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures.

Optical Properties of CdS Nanocrystals Doped with Zinc and Copper.

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires.

Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser.

Electron-Quantum Transport in Pseudomorphic and Metamorphic In<sub>0.2</sub>Ga<sub>0.8</sub>As-Based Quantum Wells.

Studying Magnetic Diodes with a GaMnAs Layer Formed by Pulsed Laser Deposition.

MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons.

Mechanism and Features of Field Emission in Semiconductors.

Anharmonicity of Lattice Vibrations in Bi<sub>2</sub>Se<sub>3</sub> Single Crystals.

Luminescence of (ZnSe:Al):Yb Сrystals at 4.2 K.

Effect of the Copper Content on the Kinetics of the Microwave Photoconductivity of CIGS Solid Solutions.

Specific Features of the Electron Spin Resonance of an Iron Impurity in HgSe Crystals.

Decomposition of a Solid Solution of Interstitial Magnesium in Silicon.

Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of <sup>132</sup>Xe<sup>26+</sup> Ions with Energy of 167 MeV.

Discovery of III–V Semiconductors: Physical Properties and Application.