Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 16

Results: 30

Enhanced Photocatalytic Activity of ZnS:Mn2+ Quantum Dots.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2151, doi. 10.1134/S1063782619120261

By:

Sergeeva, K. A.;
Sergeev, A. A.;
Postnova, I. V.;
Shchipunov, Y. A.;
Voznesenskiy, S. S.

Publication type:

Article

Observation of Intralayer and Interlayer Excitons in Monolayered WSe2/WS2 Heterostructure.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2140, doi. 10.1134/S1063782619120273

By:

Shah, M.;
Schneider, L. M.;
Rahimi-Iman, A.

Publication type:

Article

Probability Density Operator and Darwin Term in ID Spinless Semi-Relativistic System.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2147, doi. 10.1134/S1063782619120248

By:

Rumyantsev, E. L.;
Kunavin, P. E.;
Germanenko, A. V.

Publication type:

Article

Influence of Impurities on Polarization Properties of Lattice Vibrations.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2129, doi. 10.1134/S1063782619120042

By:

Bairamov, B. H.;
Toporov, V. V.;
Bayramov, F. B.

Publication type:

Article

Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2125, doi. 10.1134/S1063782619120297

By:

Spirina, A. A.;
Neizvestny, I. G.;
Shwartz, N. L.

Publication type:

Article

Dielectric Measurements of Polymer Composite Based on CdS Quantum Dots in Low Density Polyethylene at Microwave Frequencies.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2162, doi. 10.1134/S1063782619120315

By:

Ushakov, N. M.;
Kosobudsky, I. D.

Publication type:

Article

Electronic and Optical Properties of Perovskite Quantum-Dot Dimer.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2158, doi. 10.1134/S1063782619120303

By:

Tepliakov, N. V.;
Vovk, I. A.;
Leonov, M. Yu.;
Baranov, A. V.;
Fedorov, A. V.;
Rukhlenko, I. D.

Publication type:

Article

Differential Absorption Features of CdSe QDs in the Case of Resonant and Nonresonant Excitons Excitation.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2155, doi. 10.1134/S1063782619120285

By:

Smirnov, A. M.;
Golinskaya, A. D.;
Zharkova, E. V.;
Bubenov, S. S.;
Dorofeev, S. G.;
Dneprovskii, V. S.

Publication type:

Article

Electronic States in Cylindrical Core-Multi-Shell Nanowire.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2137, doi. 10.1134/S1063782619120236

By:

Rudakov, A. O.;
Kokurin, I. A.

Publication type:

Article

Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2052, doi. 10.1134/S1063782619120108

By:

Grigorieva, N. R.;
Sel'kin, A. V.

Publication type:

Article

Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2133, doi. 10.1134/S1063782619120078

By:

Bodunov, E. N.;
Simões Gamboa, A. L.

Publication type:

Article

XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Quartz.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2115, doi. 10.1134/S1063782619120145

By:

Khramov, E. V.;
Privezentsev, V. V.;
Palagushkin, A. N.

Publication type:

Article

Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2121, doi. 10.1134/S106378261912025X

By:

Sakharov, A. V.;
Usov, S. O.;
Rodin, S. N.;
Lundin, W. V.;
Tsatsulnikov, A. F.;
Mitrofanov, M. I.;
Levitskii, I. V.;
Voznyuk, G. V.;
Kaliteevskii, M. A.;
Evtikhiev, V. P.

Publication type:

Article

Selective Epitaxy of Submicron GaN Structures.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2118, doi. 10.1134/S1063782619120157

By:

Lundin, W. V.;
Tsatsulnikov, A. F.;
Rodin, S. N.;
Sakharov, A. V.;
Mitrofanov, M. I.;
Levitskii, I. V.;
Voznyuk, G. V.;
Evtikhiev, V. P.

Publication type:

Article

The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2110, doi. 10.1134/S1063782619120224

By:

Prasolov, N. D.;
Ermakov, I. A.;
Gutkin, A. A.;
Solov'ev, V. A.;
Dorogin, L. M.;
Konnikov, S. G.;
Brunkov, P. N.

Publication type:

Article

Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2106, doi. 10.1134/S1063782619120194

By:

Nastovjak, A. G.;
Usenkova, A. G.;
Shwartz, N. L.;
Neizvestny, I. G.

Publication type:

Article

The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2103, doi. 10.1134/S1063782619120200

By:

Parkhomenko, Ya. A.;
Dement'ev, P. A.;
Moiseev, K. D.

Publication type:

Article

Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2100, doi. 10.1134/S1063782619120170

By:

Mitrofanov, M. I.;
Voznyuk, G. V.;
Rodin, S. N.;
Lundin, W. V.;
Evtikhiev, V. P.;
Tsatsulnikov, A. F.

Publication type:

Article

Femtosecond Laser-Induced Periodical Nanomodification of Surface Composition.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2094, doi. 10.1134/S106378261912011X

By:

Ionin, A. A.;
Kudryashov, S. I.;
Makarov, S. V.

Publication type:

Article

Synthesis and Comparison of the Electrical Properties of Polyaniline and Poly[(N-2-hydroxyethyl)aniline].

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2090, doi. 10.1134/S1063782619120133

By:

Khadieva, A. I.;
Gorbachuk, V. V.;
Latypov, R. R.;
Stoikov, I. I.

Publication type:

Article

The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2085, doi. 10.1134/S1063782619120121

By:

Kazanov, D. R.;
Evropeytsev, E. A.;
Shubina, T. V.

Publication type:

Article

Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2082, doi. 10.1134/S1063782619120169

By:

Maslennikov, S. Y.;
Evstropiev, S. K.;
Gridchin, V. O.;
Soshnikov, I. P.

Publication type:

Article

Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2078, doi. 10.1134/S1063782619120091

By:

Danilov, L. V.;
Levin, R. V.;
Nevedomskyi, V. N.;
Pushnyi, B. V.

Publication type:

Article

Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2072, doi. 10.1134/S106378261912008X

By:

Chebanenko, M. I.;
Zakharova, N. V.;
Lobinsky, A. A.;
Popkov, V. I.

Publication type:

Article

Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2068, doi. 10.1134/S1063782619120066

By:

Berdnikov, Y.;
Sibirev, N. V.;
Koryakin, A.

Publication type:

Article

Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2064, doi. 10.1134/S1063782619120030

By:

Astankova, K. N.;
Gorokhov, E. B.;
Azarov, I. A.;
Volodin, V. A.;
Latyshev, A. V.

Publication type:

Article

Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2060, doi. 10.1134/S1063782619120029

By:

Agekyan, V.;
Chukeev, M.;
Karczewski, G.;
Serov, A.;
Filosofov, N.;
Reznitsky, A.

Publication type:

Article

Two Dimensional Bright and Dark Magnetoexcitons Interacting with Quantum Point Vortices.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2055, doi. 10.1134/S1063782619120182

By:

Moskalenko, S. A.;
Moskalenko, V. A.;
Podlesny, I. V.;
Zubac, I. A.

Publication type:

Article

An Estimate for the Nonradiative Linewidths of the Quasibound Electron-Hole Pairs in Narrow Quantum Wells.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2049, doi. 10.1134/S1063782619120054

By:

Belov, P. A.

Publication type:

Article

The Indirect Excitons Contribution to the Polarizability of a Dielectric Nanoparticle.

Published in:

Semiconductors, 2019, v. 53, n. 16, p. 2045, doi. 10.1134/S1063782619120212

By:

Pokutnyi, S. I.;
Dzyuba, V. P.;
Amosov, A. V.

Publication type:

Article