Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 16
Results: 30
Probability Density Operator and Darwin Term in ID Spinless Semi-Relativistic System.
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- Semiconductors, 2019, v. 53, n. 16, p. 2147, doi. 10.1134/S1063782619120248
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Dielectric Measurements of Polymer Composite Based on CdS Quantum Dots in Low Density Polyethylene at Microwave Frequencies.
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- Semiconductors, 2019, v. 53, n. 16, p. 2162, doi. 10.1134/S1063782619120315
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Electronic and Optical Properties of Perovskite Quantum-Dot Dimer.
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- Semiconductors, 2019, v. 53, n. 16, p. 2158, doi. 10.1134/S1063782619120303
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Differential Absorption Features of CdSe QDs in the Case of Resonant and Nonresonant Excitons Excitation.
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- Semiconductors, 2019, v. 53, n. 16, p. 2155, doi. 10.1134/S1063782619120285
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Enhanced Photocatalytic Activity of ZnS:Mn2+ Quantum Dots.
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- Semiconductors, 2019, v. 53, n. 16, p. 2151, doi. 10.1134/S1063782619120261
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Observation of Intralayer and Interlayer Excitons in Monolayered WSe2/WS2 Heterostructure.
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- Semiconductors, 2019, v. 53, n. 16, p. 2140, doi. 10.1134/S1063782619120273
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Electronic States in Cylindrical Core-Multi-Shell Nanowire.
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- Semiconductors, 2019, v. 53, n. 16, p. 2137, doi. 10.1134/S1063782619120236
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Kinetics of Photoluminescence Decay of Colloidal Quantum Dots: Reversible Trapping of Photogenerated Charge Carriers.
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- Semiconductors, 2019, v. 53, n. 16, p. 2133, doi. 10.1134/S1063782619120078
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Influence of Impurities on Polarization Properties of Lattice Vibrations.
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- Semiconductors, 2019, v. 53, n. 16, p. 2129, doi. 10.1134/S1063782619120042
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Initial Stages of Planar GaAs Nanowire Growth—Monte Carlo Simulation.
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- Semiconductors, 2019, v. 53, n. 16, p. 2125, doi. 10.1134/S1063782619120297
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Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam.
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- Semiconductors, 2019, v. 53, n. 16, p. 2121, doi. 10.1134/S106378261912025X
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Selective Epitaxy of Submicron GaN Structures.
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- Semiconductors, 2019, v. 53, n. 16, p. 2118, doi. 10.1134/S1063782619120157
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XAFS Investigation of Nanoparticle Formation in 64Zn+ Ion Implanted and Thermo Oxidized Quartz.
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- Semiconductors, 2019, v. 53, n. 16, p. 2115, doi. 10.1134/S1063782619120145
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The Study of Nanoindentation of Atomically Flat GaAs Surface using the Tip of Atomic-Force Microscope.
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- Semiconductors, 2019, v. 53, n. 16, p. 2110, doi. 10.1134/S1063782619120224
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Examination of Self-Catalyzed III–V Nanowire Growth by Monte Carlo Simulation.
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- Semiconductors, 2019, v. 53, n. 16, p. 2106, doi. 10.1134/S1063782619120194
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The Influence of the Crystal Structure of the GaSb–InAs Matrix on the Formation of InSb Quantum Dots.
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- Semiconductors, 2019, v. 53, n. 16, p. 2103, doi. 10.1134/S1063782619120200
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Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB.
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- Semiconductors, 2019, v. 53, n. 16, p. 2100, doi. 10.1134/S1063782619120170
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Femtosecond Laser-Induced Periodical Nanomodification of Surface Composition.
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- Semiconductors, 2019, v. 53, n. 16, p. 2094, doi. 10.1134/S106378261912011X
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Synthesis and Comparison of the Electrical Properties of Polyaniline and Poly[(N-2-hydroxyethyl)aniline].
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- Semiconductors, 2019, v. 53, n. 16, p. 2090, doi. 10.1134/S1063782619120133
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The Cavity-Effect in Site-Controlled GaN Nanocolumns with InGaN Insertions.
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- Semiconductors, 2019, v. 53, n. 16, p. 2085, doi. 10.1134/S1063782619120121
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Photoactive ZnO–Al2O3 Transparent Coatings and Nanocomposites Prepared by a Simple Polymer-Salt Synthesis.
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- Semiconductors, 2019, v. 53, n. 16, p. 2082, doi. 10.1134/S1063782619120169
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Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD.
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- Semiconductors, 2019, v. 53, n. 16, p. 2078, doi. 10.1134/S1063782619120091
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Ultrasonic-Assisted Exfoliation of Graphitic Carbon Nitride and its Electrocatalytic Performance in Process of Ethanol Reforming.
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- Semiconductors, 2019, v. 53, n. 16, p. 2072, doi. 10.1134/S106378261912008X
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Widening the Length Distributions in Irregular Arrays of Self-Catalyzed III–V Nanowires.
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- Semiconductors, 2019, v. 53, n. 16, p. 2068, doi. 10.1134/S1063782619120066
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Study of Structural Modification of Composites with Ge Nanoclusters by Optical and Electron Microscopy Methods.
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- Semiconductors, 2019, v. 53, n. 16, p. 2064, doi. 10.1134/S1063782619120030
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Exciton Spectra and Energy Transfer in CdTe/ZnTe Double Quantum Wells Grown by Atomic-Layer Epitaxy.
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- Semiconductors, 2019, v. 53, n. 16, p. 2060, doi. 10.1134/S1063782619120029
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Two Dimensional Bright and Dark Magnetoexcitons Interacting with Quantum Point Vortices.
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- Semiconductors, 2019, v. 53, n. 16, p. 2055, doi. 10.1134/S1063782619120182
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Emission of Light from Compositionally Graded CdSSe/CdS Heterostructure with Smooth Near-surface Excitonic Potential.
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- Semiconductors, 2019, v. 53, n. 16, p. 2052, doi. 10.1134/S1063782619120108
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An Estimate for the Nonradiative Linewidths of the Quasibound Electron-Hole Pairs in Narrow Quantum Wells.
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- Semiconductors, 2019, v. 53, n. 16, p. 2049, doi. 10.1134/S1063782619120054
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The Indirect Excitons Contribution to the Polarizability of a Dielectric Nanoparticle.
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- Semiconductors, 2019, v. 53, n. 16, p. 2045, doi. 10.1134/S1063782619120212
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