Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 14
Results: 26
Monopolar Resistive Switching in Diamond-Like Carbon Films.
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- Semiconductors, 2019, v. 53, n. 14, p. 1970, doi. 10.1134/S1063782619140252
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High Directivity in the Narrow Band of Spherical Dielectric Antennas in GHz and THz Ranges.
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- Semiconductors, 2019, v. 53, n. 14, p. 1967, doi. 10.1134/S1063782619140227
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Magnetoimpedance Effect in a SOI-Based Structure.
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- Semiconductors, 2019, v. 53, n. 14, p. 1964, doi. 10.1134/S1063782619140215
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Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting.
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- Semiconductors, 2019, v. 53, n. 14, p. 1959, doi. 10.1134/S1063782619140069
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Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures.
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- Semiconductors, 2019, v. 53, n. 14, p. 1954, doi. 10.1134/S1063782619140045
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Synthesis, Structural and Spectral Properties of Surface Noble Metal Nanostructures for Fiber-Optic Photoacoustic Generation.
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- Semiconductors, 2019, v. 53, n. 14, p. 1950, doi. 10.1134/S1063782619140070
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- Article
Fullerene for the Improvement of PbS QDs-Based Hybrid Solar Cells.
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- Semiconductors, 2019, v. 53, n. 14, p. 1946, doi. 10.1134/S1063782619140112
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Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity.
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- Semiconductors, 2019, v. 53, n. 14, p. 1942, doi. 10.1134/S1063782619140197
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Temperature Dependences of the Hysteresis Optical Properties of CdS-LDPE Polymer Nanocomposites.
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- Semiconductors, 2019, v. 53, n. 14, p. 1939, doi. 10.1134/S1063782619140240
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Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.
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- Semiconductors, 2019, v. 53, n. 14, p. 1935, doi. 10.1134/S1063782619140239
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Ab Initio Study of Absorption Resonance Correlations between Nanotubes and Nanoribbons of Graphene and Hexagonal Boron Nitride.
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- Semiconductors, 2019, v. 53, n. 14, p. 1929, doi. 10.1134/S1063782619140161
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Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes.
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- Semiconductors, 2019, v. 53, n. 14, p. 1926, doi. 10.1134/S1063782619140148
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J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam.
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- Semiconductors, 2019, v. 53, n. 14, p. 1922, doi. 10.1134/S1063782619140136
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Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface.
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- Semiconductors, 2019, v. 53, n. 14, p. 1918, doi. 10.1134/S1063782619140124
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Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures.
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- Semiconductors, 2019, v. 53, n. 14, p. 1914, doi. 10.1134/S1063782619140094
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Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy.
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- Semiconductors, 2019, v. 53, n. 14, p. 1910, doi. 10.1134/S1063782619140082
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Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC.
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- Semiconductors, 2019, v. 53, n. 14, p. 1904, doi. 10.1134/S1063782619140057
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Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells.
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- Semiconductors, 2019, v. 53, n. 14, p. 1900, doi. 10.1134/S1063782619140033
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A New Algorithm for Measuring the Young's Modulus of Suspended Nanoobjects by the Bending-Based Test Method of Atomic Force Microscopy.
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- Semiconductors, 2019, v. 53, n. 14, p. 1891, doi. 10.1134/S1063782619140021
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Record Low Threshold Current Density in Quantum Dot Microdisk Laser.
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- Semiconductors, 2019, v. 53, n. 14, p. 1888, doi. 10.1134/S106378261914015X
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Luminescent Sensing via Photonic Nanojets.
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- Semiconductors, 2019, v. 53, n. 14, p. 1884, doi. 10.1134/S1063782619140203
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Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures.
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- Semiconductors, 2019, v. 53, n. 14, p. 1880, doi. 10.1134/S1063782619140185
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Spontaneous Emission in the Anti-Waveguiding VCSEL.
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- Semiconductors, 2019, v. 53, n. 14, p. 1876, doi. 10.1134/S1063782619140173
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Microwave Absorption by Axisymmetric Plasmon Mode in 2D Electron Disk.
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- Semiconductors, 2019, v. 53, n. 14, p. 1873, doi. 10.1134/S1063782619140288
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Plasmons in Infinite 2D Electron System Screened by the Disk-Shaped Metallic Gate.
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- Semiconductors, 2019, v. 53, n. 14, p. 1870, doi. 10.1134/S1063782619140276
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Topological Electronic States on the Surface of a Strained Gapless Semiconductor.
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- Semiconductors, 2019, v. 53, n. 14, p. 1867, doi. 10.1134/S1063782619140100
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