Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 14

Results: 26

Monopolar Resistive Switching in Diamond-Like Carbon Films.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1970, doi. 10.1134/S1063782619140252

By:

Vedeneev, A. S.;
Luzanov, V. A.;
Rylkov, V. V.

Publication type:

Article

Optical Estimation of the Carrier Concentration and the Value of Strain in Monolayer Graphene Grown on 4H-SiC.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1904, doi. 10.1134/S1063782619140057

By:

Eliseyev, I. A.;
Davydov, V. Yu.;
Smirnov, A. N.;
Nestoklon, M. O.;
Dementev, P. A.;
Lebedev, S. P.;
Lebedev, A. A.;
Zubov, A. V.;
Mathew, S.;
Pezoldt, J.;
Bokai, K. A.;
Usachov, D. Yu.

Publication type:

Article

Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1900, doi. 10.1134/S1063782619140033

By:

Arteev, D. S.;
Sakharov, A. V.;
Lundin, W. V.;
Zavarin, E. E.;
Zakheim, D. A.;
Tsatsulnikov, A. F.

Publication type:

Article

A New Algorithm for Measuring the Young's Modulus of Suspended Nanoobjects by the Bending-Based Test Method of Atomic Force Microscopy.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1891, doi. 10.1134/S1063782619140021

By:

Ankudinov, A. V.

Publication type:

Article

Record Low Threshold Current Density in Quantum Dot Microdisk Laser.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1888, doi. 10.1134/S106378261914015X

By:

Moiseev, E. I.;
Kryzhanovskaya, N. V.;
Zubov, F. I.;
Mikhailovskii, M. S.;
Abramov, A. N.;
Maximov, M. V.;
Kulagina, M. M.;
Guseva, Yu. A.;
Livshits, D. A.;
Zhukov, A. E.

Publication type:

Article

Luminescent Sensing via Photonic Nanojets.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1884, doi. 10.1134/S1063782619140203

By:

Sergeev, A. A.;
Sergeeva, K. A.;
Leonov, A. A.;
Nepomnyaschiy, A. V.;
Voznesenskiy, S. S.;
Kulchin, Yu. N.

Publication type:

Article

High Directivity in the Narrow Band of Spherical Dielectric Antennas in GHz and THz Ranges.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1967, doi. 10.1134/S1063782619140227

By:

Storozhenko, D. V.;
Nepomnyaschiy, A. V.;
Deev, A. V.

Publication type:

Article

Magnetoimpedance Effect in a SOI-Based Structure.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1964, doi. 10.1134/S1063782619140215

By:

Smolyakov, D. A.;
Tarasov, A. S.;
Yakovlev, I. A.;
Volochaev, M. N.

Publication type:

Article

Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1959, doi. 10.1134/S1063782619140069

By:

Emelyanov, V. M.;
Pokrovskiy, P. V.;
Kalyuzhnyy, N. A.;
Nakhimovich, M. V.;
Shvarts, M. Z.

Publication type:

Article

Study of the Photovoltage in Mn/SiO2/n-Si MOS Structure at Cryogenic Temperatures.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1954, doi. 10.1134/S1063782619140045

By:

Bondarev, I. A.;
Rautskii, M. V.;
Yakovlev, I. A.;
Volochaev, M. N.;
Lukyanenko, A. V.;
Tarasov, A. S.;
Volkov, N. V.

Publication type:

Article

Synthesis, Structural and Spectral Properties of Surface Noble Metal Nanostructures for Fiber-Optic Photoacoustic Generation.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1950, doi. 10.1134/S1063782619140070

By:

Goncharov, V. K.;
Kozadaev, K. V.;
Mikitchuk, A. P.;
Puzyrev, M. V.

Publication type:

Article

Fullerene for the Improvement of PbS QDs-Based Hybrid Solar Cells.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1946, doi. 10.1134/S1063782619140112

By:

Korzhenevskii, I. G.;
Onishchuk, D. A.;
Babaev, A. A.;
Dubavik, A.;
Parfenov, P. S.;
Litvin, A. P.

Publication type:

Article

Increase of the Zero-Phonon-Line Emission from Color Centers in Nanodiamonds by Coupling with Dielectric Nanocavity.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1942, doi. 10.1134/S1063782619140197

By:

Sergaeva, O. N.;
Yaroshenko, V. V.;
Volkov, I. A.;
Zuev, D. A.;
Savelev, R. S.

Publication type:

Article

Temperature Dependences of the Hysteresis Optical Properties of CdS-LDPE Polymer Nanocomposites.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1939, doi. 10.1134/S1063782619140240

By:

Ushakov, N. M.;
Kosobudsky, I. D.

Publication type:

Article

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1935, doi. 10.1134/S1063782619140239

By:

Timoshnev, S. N.;
Mizerov, A. M.;
Lapushkin, M. N.;
Kukushkin, S. A.;
Bouravleuv, A. D.

Publication type:

Article

Ab Initio Study of Absorption Resonance Correlations between Nanotubes and Nanoribbons of Graphene and Hexagonal Boron Nitride.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1929, doi. 10.1134/S1063782619140161

By:

Payod, Renebeth B.;
Saroka, Vasil A.

Publication type:

Article

Lithography and Plasma Treatment Effect on Conductivity of Carbon Nanotubes.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1926, doi. 10.1134/S1063782619140148

By:

Mitin, D. M.;
Raudik, S. A.;
Mozharov, A. M.;
Bolshakov, A. D.;
Fedorov, V. V.;
Nepokh, V. V.;
Rajanna, P. M.;
Nasibulin, A. G.;
Mukhin, I. S.

Publication type:

Article

J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1922, doi. 10.1134/S1063782619140136

By:

Mikoushkin, V. M.;
Kalinovskii, V. S.;
Kontrosh, E. V.;
Makarevskaya, E. A.

Publication type:

Article

Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1918, doi. 10.1134/S1063782619140124

By:

Mikoushkin, V. M.;
Solonitsyna, A. P.;
Makarevskaya, E. A.;
Novikov, D. A.

Publication type:

Article

Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1914, doi. 10.1134/S1063782619140094

By:

Goray, L. I.;
Pirogov, E. V.;
Nikitina, E. V.;
Ubyivovk, E. V.;
Gerchikov, L. G.;
Ipatov, A. N.;
Dashkov, A. S.;
Sobolev, M. S.;
Ilkiv, I. V.;
Bouravlev, A. D.

Publication type:

Article

Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1910, doi. 10.1134/S1063782619140082

By:

Goray, L. I.;
Pirogov, E. V.;
Sobolev, M. S.;
Ilkiv, I. V.;
Dashkov, A. S.;
Vainer, Yu. A.;
Svechnikov, M. V.;
Yunin, P. A.;
Chkhalo, N. I.;
Bouravlev, A. D.

Publication type:

Article

Whispering Gallery Modes and Spontaneous Emission in Compact VCSEL Structures.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1880, doi. 10.1134/S1063782619140185

By:

Savelyev, A. V.;
Breuer, S.;
Maximov, M. V.;
Zhukov, A. E.;
Shchukin, V. A.;
Ledentsov, N. N.

Publication type:

Article

Spontaneous Emission in the Anti-Waveguiding VCSEL.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1876, doi. 10.1134/S1063782619140173

By:

Savelyev, A. V.;
Nadtochiy, A. M.;
Maximov, M. V.;
Zhukov, A. E.;
Shchukin, V. A.;
Ledentsov, N. N.

Publication type:

Article

Microwave Absorption by Axisymmetric Plasmon Mode in 2D Electron Disk.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1873, doi. 10.1134/S1063782619140288

By:

Zagorodnev, I. V.;
Rodionov, D. A.;
Zabolotnykh, A. A.;
Volkov, V. A.

Publication type:

Article

Plasmons in Infinite 2D Electron System Screened by the Disk-Shaped Metallic Gate.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1870, doi. 10.1134/S1063782619140276

By:

Zabolotnykh, A. A.;
Volkov, V. A.

Publication type:

Article

Topological Electronic States on the Surface of a Strained Gapless Semiconductor.

Published in:

Semiconductors, 2019, v. 53, n. 14, p. 1867, doi. 10.1134/S1063782619140100

By:

Kibis, O. V.;
Kyriienko, O.;
Shelykh, I. A.

Publication type:

Article