Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 13
Results: 20
Effect of Spark Plasma Sintering Temperature on Thermoelectric Properties of Grained Bi1.9Gd0.1Te3 Compound.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1838, doi. 10.1134/S1063782619130219
- By:
- Publication type:
- Article
Hardness and Fracture Toughness of Solid Solutions of Mg2Si and Mg2Sn.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1831, doi. 10.1134/S1063782619130098
- By:
- Publication type:
- Article
Magnetoresistance of Polycrystalline Ytterbium at Low Temperatures.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1853, doi. 10.1134/S1063782619130116
- By:
- Publication type:
- Article
The Surface Preparation of Thermoelectric Materials for Deposition of Thin-Film Contact Systems.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1848, doi. 10.1134/S1063782619130177
- By:
- Publication type:
- Article
The Thermopower and Electron Mobility in Monophase Monocrystalline SmS in a Wide Temperature Range.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1845, doi. 10.1134/S1063782619130165
- By:
- Publication type:
- Article
Topological Surface States of Multicomponent Thermoelectrics Based on Bismuth Telluride.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1860, doi. 10.1134/S1063782619130128
- By:
- Publication type:
- Article
Electrical Transport Properties of Nb and Ga Double Substituted Fe2VAl Heusler Compounds.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1856, doi. 10.1134/S1063782619130207
- By:
- Publication type:
- Article
Contacting Cu Electrodes to Mg2Si0.3Sn0.7: Direct vs. Indirect Resistive Heating.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1825, doi. 10.1134/S1063782619130025
- By:
- Publication type:
- Article
Towards the Use of Cu–S Based Synthetic Minerals for Thermoelectric Applications.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1817, doi. 10.1134/S1063782619130086
- By:
- Publication type:
- Article
Influence of Heat Treatments on the Properties of ZnO Nanorods Prepared by Hydrothermal Synthesis.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1811, doi. 10.1134/S106378261913013X
- By:
- Publication type:
- Article
Comparative Analysis of Double Gate Junction Less (DG JL) and Gate Stacked Double Gate Junction Less (GS DG JL) MOSFETs.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1804, doi. 10.1134/S1063782619130190
- By:
- Publication type:
- Article
Analytical Modeling of Surface Potential and Drain Current of Hetero-Dielectric DG TFET and Its Analog and Radio-Frequency Performance Evaluation.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1797, doi. 10.1134/S1063782619130153
- By:
- Publication type:
- Article
Influence of Si-Doping on the Performance of InGaN/GaN Multiple Quantum Well Solar Cells.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1792, doi. 10.1134/S1063782619130049
- By:
- Publication type:
- Article
Analysis of Al0.15Ga0.85N/GaN/Al0.15Ga0.85N DH-HEMT for RF and Microwave Frequency Applications.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1784, doi. 10.1134/S1063782619130050
- By:
- Publication type:
- Article
Mg-Doped ZnO and Zn-Doped MgO Semiconductor Nanoparticles; Synthesis and Catalytic, Optical and Electro-Optical Characterization.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1769, doi. 10.1134/S1063782619130141
- By:
- Publication type:
- Article
Diameter Dependent Electronic, Optical and Transport Properties of CdSe Nanowire: Ab-Initio Study.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1759, doi. 10.1134/S1063782619130104
- By:
- Publication type:
- Article
Microstructure and Optical Bandgap of Cobalt Selenide Nanofilms.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1751, doi. 10.1134/S1063782619130074
- By:
- Publication type:
- Article
Effect of Deposition Time on Structural, Morphological and Optical Properties of PVA Capped SnS Films Grown by CBD Process.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1745, doi. 10.1134/S1063782619130062
- By:
- Publication type:
- Article
Electron Mobility Calculation of Diluted III–V-Nitrides Alloys.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1740, doi. 10.1134/S1063782619130037
- By:
- Publication type:
- Article
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys.
- Published in:
- Semiconductors, 2019, v. 53, n. 13, p. 1731, doi. 10.1134/S1063782619130189
- By:
- Publication type:
- Article