Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 12

Results: 28

InxAl1 –xN Solid Solutions: Composition Stability Issues.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1724, doi. 10.1134/S1063782619160061

By:

Brudnyi, V. N.;
Vilisova, M. D.;
Velikovskiy, L. E.

Publication type:

Article

Modification of Carbon-Nanotube Wettability by Ion Irradiation.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1683, doi. 10.1134/S1063782619160188

By:

Morkovkin, A. I.;
Vorobyeva, E. A.;
Evseev, A. P.;
Balakshin, Yu. V.;
Shemukhin, A. A.

Publication type:

Article

Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1712, doi. 10.1134/S1063782619160255

By:

Shchukin, V. G.;
Konstantinov, V. O.;
Sharafutdinov, R. G.

Publication type:

Article

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1709, doi. 10.1134/S1063782619160085

By:

Dikareva, N. V.;
Zvonkov, B. N.;
Samartsev, I. V.;
Nekorkin, S. M.;
Baidus, N. V.;
Dubinov, A. A.

Publication type:

Article

Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1705, doi. 10.1134/S1063782619160115

By:

Karlina, L. B.;
Vlasov, A. S.;
Shvarts, M. Z.;
Soshnikov, I. P.;
Smirnova, I. P.;
Komissarenko, F. E.;
Ankudinov, A. V.

Publication type:

Article

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1699, doi. 10.1134/S1063782619160218

By:

Nadtochiy, A. M.;
Shernyakov, Yu. M.;
Kulagina, M. M.;
Payusov, A. S.;
Gordeev, N. Yu.;
Maximov, M. V.;
Zhukov, A. E.;
Denneulin, T.;
Cherkashin, N.;
Shchukin, V. A.;
Ledentsov, N. N.

Publication type:

Article

Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1717, doi. 10.1134/S1063782619160176

By:

Mokhov, D. V.;
Berezovskaya, T. N.;
Nikitina, E. V.;
Shubina, K. Yu.;
Mizerov, A. M.;
Bouravleuv, A. D.

Publication type:

Article

Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1677, doi. 10.1134/S1063782619160097

By:

Glukhova, O. E.;
Slepchenkov, M. M.;
Mitrofanov, V. V.;
Barkov, P. V.

Publication type:

Article

Edge Doping in Graphene Devices on SiO2 Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1672, doi. 10.1134/S1063782619160292

By:

Vasilyeva, G. Yu.;
Smirnov, D.;
Vasilyev, Yu. B.;
Greshnov, A. A.;
Haug, R. J.

Publication type:

Article

On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1688, doi. 10.1134/S1063782619160280

By:

Torkhov, N. A.;
Babak, L. I.;
Kokolov, A. A.

Publication type:

Article

Synthesis and Characterization of Semiconductor Polymer Doped with FeCl3 and I2.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1656, doi. 10.1134/S1063782619160073

By:

Bouabdallah Daho;
Fontanesi, Claudio;
Messori, Massimo;
Dehbi, Abdelkader;
Belfedal, Abdelkader

Publication type:

Article

Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb1 –xAgxS Solid Solutions.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1665, doi. 10.1134/S1063782619160243

By:

Sadovnikov, S. I.

Publication type:

Article

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1651, doi. 10.1134/S1063782619160279

By:

Sovtus, N. V.;
Mynbaev, K. D.

Publication type:

Article

Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1646, doi. 10.1134/S1063782619160127

By:

Castro, R. A.;
Khanin, S. D.;
Smirnov, A. P.;
Kononov, A. A.

Publication type:

Article

Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1637, doi. 10.1134/S1063782619160048

By:

Ataeva, S. U.;
Mekhtieva, S. I.;
Isaev, A. I.;
Garibova, S. N.;
Huseynova, A. S.

Publication type:

Article

Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1633, doi. 10.1134/S106378261916022X

By:

Romanov, V. V.;
Kozhevnikov, V. A.;
Bagraev, N. T.

Publication type:

Article

De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1629, doi. 10.1134/S1063782619160231

By:

Romanov, V. V.;
Kozhevnikov, V. A.;
Tracey, C. T.;
Bagraev, N. T.

Publication type:

Article

Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1622, doi. 10.1134/S106378261916019X

By:

Muhammad Tariq Saeed Chani;
Karimov, Khasan S.;
Asiri, Abdullah M.

Publication type:

Article

Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1617, doi. 10.1134/S1063782619160164

By:

Maslov, A. Yu.;
Proshina, O. V.

Publication type:

Article

Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1608, doi. 10.1134/S1063782619160139

By:

Krivobok, V. S.;
Litvinov, D. A.;
Nikolaev, S. N.;
Onishchenko, E. E.;
Pashkeev, D. A.;
Chernopittsky, M. A.;
Grigor'eva, L. N.

Publication type:

Article

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1603, doi. 10.1134/S1063782619160036

By:

Asalzadeh, S.;
Yasserian, K.

Publication type:

Article

Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1597, doi. 10.1134/S1063782619160024

By:

Amasev, D. V.;
Tameev, A. R.;
Kazanskii, A. G.

Publication type:

Article

Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1593, doi. 10.1134/S106378261916005X

By:

Bodnar, I. V.;
Chan, B. T.;
Pavlovskii, V. N.;
Svitsiankou, I. E.;
Yablonskii, G. P.

Publication type:

Article

First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1584, doi. 10.1134/S1063782619160267

By:

Singh, A. K.;
Chandra, Devesh;
Kattayat, Sandhya;
Kumar, Shalendra;
Alvi, P. A.;
Rathi, Amit

Publication type:

Article

On the Characteristic Features of the Impurity Energy Spectrum in Arsenides.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1578, doi. 10.1134/S1063782619160103

By:

Kamiliov, I. K.;
Daunov, M. I.;
Gajiev, G. M.;
Arslanov, R. K.

Publication type:

Article

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1573, doi. 10.1134/S1063782619160206

By:

Muratov, T. T.

Publication type:

Article

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1568, doi. 10.1134/S1063782619160140

By:

Lebedev, A. A.;
Levinshtein, M. E.;
Ivanov, P. A.;
Kozlovski, V. V.;
Strel'chuk, A. M.;
Shabunina, E. I.;
Fursin, L.

Publication type:

Article

High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 12, p. 1563, doi. 10.1134/S1063782619160152

By:

Levin, R. V.;
Vlasov, A. S.;
Smirnov, A. N.;
Pushnyi, B. V.

Publication type:

Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 12

In<sub>x</sub>Al<sub>1 –</sub><sub>x</sub>N Solid Solutions: Composition Stability Issues.

Modification of Carbon-Nanotube Wettability by Ion Irradiation.

Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method.

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.

Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters.

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).

Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers.

Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement.

Edge Doping in Graphene Devices on SiO<sub>2</sub> Substrates.

On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges.

Synthesis and Characterization of Semiconductor Polymer Doped with FeCl<sub>3</sub> and I<sub>2</sub>.

Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb<sub>1 –</sub><sub>x</sub>Ag<sub>x</sub>S Solid Solutions.

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor.

Charge Transfer in Gap Structures Based on the Chalcogenide System (As<sub>2</sub>Se<sub>3</sub>)<sub>100 –</sub><sub>x</sub>Bi<sub>x</sub>.

Effect of the Samarium Impurity on the Local Structure of Se<sub>95</sub>Te<sub>5</sub> Chalcogenide Glassy Semiconductor and Current Passage through Al–Se<sub>95</sub>Te<sub>5</sub>〈Sm〉–Te Structures.

Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States.

De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States.

Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors.

Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials.

Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors.

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO<sub>2</sub> Thin Films.

Features of the Temperature Dependences of the Photoconductivity of Organometallic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Perovskite Films.

Temperature Dependence of the Band Gap of MnAgIn<sub>7</sub>S<sub>12</sub> Single Crystals.

First-Principles Investigation of Electronic Properties of GaAs<sub>x</sub>Sb<sub>1 –</sub><sub>x</sub> Ternary Alloys.

On the Characteristic Features of the Impurity Energy Spectrum in Arsenides.

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures.

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs.

High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy.