Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 12

Results: 28

InxAl1 –xN Solid Solutions: Composition Stability Issues.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1724, doi. 10.1134/S1063782619160061
By:
- Brudnyi, V. N.;
- Vilisova, M. D.;
- Velikovskiy, L. E.
Publication type:
Article
Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1717, doi. 10.1134/S1063782619160176
By:
- Mokhov, D. V.;
- Berezovskaya, T. N.;
- Nikitina, E. V.;
- Shubina, K. Yu.;
- Mizerov, A. M.;
- Bouravleuv, A. D.
Publication type:
Article
Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1712, doi. 10.1134/S1063782619160255
By:
- Shchukin, V. G.;
- Konstantinov, V. O.;
- Sharafutdinov, R. G.
Publication type:
Article
GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1709, doi. 10.1134/S1063782619160085
By:
- Dikareva, N. V.;
- Zvonkov, B. N.;
- Samartsev, I. V.;
- Nekorkin, S. M.;
- Baidus, N. V.;
- Dubinov, A. A.
Publication type:
Article
Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1705, doi. 10.1134/S1063782619160115
By:
- Karlina, L. B.;
- Vlasov, A. S.;
- Shvarts, M. Z.;
- Soshnikov, I. P.;
- Smirnova, I. P.;
- Komissarenko, F. E.;
- Ankudinov, A. V.
Publication type:
Article
InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1699, doi. 10.1134/S1063782619160218
By:
- Nadtochiy, A. M.;
- Shernyakov, Yu. M.;
- Kulagina, M. M.;
- Payusov, A. S.;
- Gordeev, N. Yu.;
- Maximov, M. V.;
- Zhukov, A. E.;
- Denneulin, T.;
- Cherkashin, N.;
- Shchukin, V. A.;
- Ledentsov, N. N.
Publication type:
Article
On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1688, doi. 10.1134/S1063782619160280
By:
- Torkhov, N. A.;
- Babak, L. I.;
- Kokolov, A. A.
Publication type:
Article
Modification of Carbon-Nanotube Wettability by Ion Irradiation.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1683, doi. 10.1134/S1063782619160188
By:
- Morkovkin, A. I.;
- Vorobyeva, E. A.;
- Evseev, A. P.;
- Balakshin, Yu. V.;
- Shemukhin, A. A.
Publication type:
Article
Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1677, doi. 10.1134/S1063782619160097
By:
- Glukhova, O. E.;
- Slepchenkov, M. M.;
- Mitrofanov, V. V.;
- Barkov, P. V.
Publication type:
Article
Edge Doping in Graphene Devices on SiO2 Substrates.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1672, doi. 10.1134/S1063782619160292
By:
- Vasilyeva, G. Yu.;
- Smirnov, D.;
- Vasilyev, Yu. B.;
- Greshnov, A. A.;
- Haug, R. J.
Publication type:
Article
Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb1 –xAgxS Solid Solutions.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1665, doi. 10.1134/S1063782619160243
By:
- Sadovnikov, S. I.
Publication type:
Article
Synthesis and Characterization of Semiconductor Polymer Doped with FeCl3 and I2.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1656, doi. 10.1134/S1063782619160073
By:
- Bouabdallah Daho;
- Fontanesi, Claudio;
- Messori, Massimo;
- Dehbi, Abdelkader;
- Belfedal, Abdelkader
Publication type:
Article
Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1651, doi. 10.1134/S1063782619160279
By:
- Sovtus, N. V.;
- Mynbaev, K. D.
Publication type:
Article
Charge Transfer in Gap Structures Based on the Chalcogenide System (As2Se3)100 –xBix.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1646, doi. 10.1134/S1063782619160127
By:
- Castro, R. A.;
- Khanin, S. D.;
- Smirnov, A. P.;
- Kononov, A. A.
Publication type:
Article
Effect of the Samarium Impurity on the Local Structure of Se95Te5 Chalcogenide Glassy Semiconductor and Current Passage through Al–Se95Te5〈Sm〉–Te Structures.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1637, doi. 10.1134/S1063782619160048
By:
- Ataeva, S. U.;
- Mekhtieva, S. I.;
- Isaev, A. I.;
- Garibova, S. N.;
- Huseynova, A. S.
Publication type:
Article
Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1633, doi. 10.1134/S106378261916022X
By:
- Romanov, V. V.;
- Kozhevnikov, V. A.;
- Bagraev, N. T.
Publication type:
Article
De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1629, doi. 10.1134/S1063782619160231
By:
- Romanov, V. V.;
- Kozhevnikov, V. A.;
- Tracey, C. T.;
- Bagraev, N. T.
Publication type:
Article
Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1622, doi. 10.1134/S106378261916019X
By:
- Muhammad Tariq Saeed Chani;
- Karimov, Khasan S.;
- Asiri, Abdullah M.
Publication type:
Article
Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1617, doi. 10.1134/S1063782619160164
By:
- Maslov, A. Yu.;
- Proshina, O. V.
Publication type:
Article
Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1608, doi. 10.1134/S1063782619160139
By:
- Krivobok, V. S.;
- Litvinov, D. A.;
- Nikolaev, S. N.;
- Onishchenko, E. E.;
- Pashkeev, D. A.;
- Chernopittsky, M. A.;
- Grigor'eva, L. N.
Publication type:
Article
The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO2 Thin Films.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1603, doi. 10.1134/S1063782619160036
By:
- Asalzadeh, S.;
- Yasserian, K.
Publication type:
Article
Features of the Temperature Dependences of the Photoconductivity of Organometallic CH3NH3PbI3 Perovskite Films.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1597, doi. 10.1134/S1063782619160024
By:
- Amasev, D. V.;
- Tameev, A. R.;
- Kazanskii, A. G.
Publication type:
Article
Temperature Dependence of the Band Gap of MnAgIn7S12 Single Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1593, doi. 10.1134/S106378261916005X
By:
- Bodnar, I. V.;
- Chan, B. T.;
- Pavlovskii, V. N.;
- Svitsiankou, I. E.;
- Yablonskii, G. P.
Publication type:
Article
On the Characteristic Features of the Impurity Energy Spectrum in Arsenides.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1578, doi. 10.1134/S1063782619160103
By:
- Kamiliov, I. K.;
- Daunov, M. I.;
- Gajiev, G. M.;
- Arslanov, R. K.
Publication type:
Article
Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1573, doi. 10.1134/S1063782619160206
By:
- Muratov, T. T.
Publication type:
Article
Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1568, doi. 10.1134/S1063782619160140
By:
- Lebedev, A. A.;
- Levinshtein, M. E.;
- Ivanov, P. A.;
- Kozlovski, V. V.;
- Strel'chuk, A. M.;
- Shabunina, E. I.;
- Fursin, L.
Publication type:
Article
High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1563, doi. 10.1134/S1063782619160152
By:
- Levin, R. V.;
- Vlasov, A. S.;
- Smirnov, A. N.;
- Pushnyi, B. V.
Publication type:
Article
First-Principles Investigation of Electronic Properties of GaAsxSb1 –x Ternary Alloys.
Published in:
Semiconductors, 2019, v. 53, n. 12, p. 1584, doi. 10.1134/S1063782619160267
By:
- Singh, A. K.;
- Chandra, Devesh;
- Kattayat, Sandhya;
- Kumar, Shalendra;
- Alvi, P. A.;
- Rathi, Amit
Publication type:
Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 12

In<sub>x</sub>Al<sub>1 –</sub><sub>x</sub>N Solid Solutions: Composition Stability Issues.

Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers.

Deposition of Amorphous and Microcrystalline Films of Silicon by the Gas-Jet Plasma-Chemical Method.

GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells.

Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters.

InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm).

On the Application of Schottky Contacts in the Microwave, Extremely High Frequency, and THz Ranges.

Modification of Carbon-Nanotube Wettability by Ion Irradiation.

Current–Voltage Characteristics of Composite Graphene–Nanotube Films with Irregular Nanotube Arrangement.

Edge Doping in Graphene Devices on SiO<sub>2</sub> Substrates.

Effects of Doping of Lead Sulfide with Silver on the Lattice and Optical Properties of Pb<sub>1 –</sub><sub>x</sub>Ag<sub>x</sub>S Solid Solutions.

Synthesis and Characterization of Semiconductor Polymer Doped with FeCl<sub>3</sub> and I<sub>2</sub>.

Parameters of Lateral and Unsteady Cord Currents in a Cylindrical Chalcogenide Glassy Semiconductor.

Charge Transfer in Gap Structures Based on the Chalcogenide System (As<sub>2</sub>Se<sub>3</sub>)<sub>100 –</sub><sub>x</sub>Bi<sub>x</sub>.

Effect of the Samarium Impurity on the Local Structure of Se<sub>95</sub>Te<sub>5</sub> Chalcogenide Glassy Semiconductor and Current Passage through Al–Se<sub>95</sub>Te<sub>5</sub>〈Sm〉–Te Structures.

Thermodynamic Description of Oscillations of the Magnetization of a Silicon Nanostructure in Weak Fields at Room Temperature. Density of States.

De Haas–van Alphen Oscillations of the Silicon Nanostructure in Weak Magnetic Fields at Room Temperature. Density of States.

Carbon Nanotubes and Graphene Powder based Multifunctional Pressure, Displacement and Gradient of Temperature Sensors.

Electron–Phonon Interaction in Quantum Wells Based on Uniaxial Materials.

Excitonic Effects and Impurity–Defect Emission in GaAs/AlGaAs Structures Used for the Production of Mid-IR Photodetectors.

The Effect of Various Annealing Cooling Rates on Electrical and Morphological Properties of TiO<sub>2</sub> Thin Films.

Features of the Temperature Dependences of the Photoconductivity of Organometallic CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> Perovskite Films.

Temperature Dependence of the Band Gap of MnAgIn<sub>7</sub>S<sub>12</sub> Single Crystals.

On the Characteristic Features of the Impurity Energy Spectrum in Arsenides.

Recombination of Mobile Carriers Across Boron Excited Levels in Silicon at Low Temperatures.

Effect of Irradiation with 15-MeV Protons on Low Frequency Noise in Power SiC MOSFETs.

High-Resistivity Gallium Antimonide Produced by Metal–Organic Vapor-Phase Epitaxy.

First-Principles Investigation of Electronic Properties of GaAs<sub>x</sub>Sb<sub>1 –</sub><sub>x</sub> Ternary Alloys.