Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 11

Results: 23

Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1500, doi. 10.1134/S1063782619110083

By:

Isayev, A. I.;
Mekhtiyeva, S. I.;
Mammadova, H. I.;
Alekberov, R. I.

Publication type:

Article

On the Anisotropic Trigger Electrical Properties of Two-Dimensional Superlattices.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1496, doi. 10.1134/S1063782619110241

By:

Zav'yalov, D. V.;
Konchenkov, V. I.;
Kryuchkov, S. V.

Publication type:

Article

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1489, doi. 10.1134/S1063782619110150

By:

Nadtochiy, A. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.;
Sannikov, D. A.;
Yagafarov, T. F.;
Zhukov, A. E.

Publication type:

Article

Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1479, doi. 10.1134/S1063782619110058

By:

Davydov, V. Yu.;
Jmerik, V. N.;
Roginskii, E. M.;
Kitaev, Yu. E.;
Beltukov, Y. M.;
Smirnov, M. B.;
Nechaev, D. V.;
Smirnov, A. N.;
Eliseyev, I. A.;
Brunkov, P. N.;
Ivanov, S. V.

Publication type:

Article

Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1472, doi. 10.1134/S106378261911006X

By:

Gagis, G. S.;
Levin, R. V.;
Marichev, A. E.;
Pushnyi, B. V.;
Scheglov, M. P.;
Ber, B. Ya.;
Kazantsev, D. Yu.;
Kudriavtsev, Yu. A.;
Vlasov, A. S.;
Popova, T. B.;
Chistyakov, D. V.;
Kuchinskii, V. I.;
Vasil'ev, V. I.

Publication type:

Article

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1558, doi. 10.1134/S1063782619110034

By:

Breev, I. D.;
Anisimov, A. N.;
Wolfson, A. A.;
Kazarova, O. P.;
Mokhov, E. N.

Publication type:

Article

On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1550, doi. 10.1134/S1063782619110174

By:

Seredin, P. V.;
Fedyukin, A. V.;
Terekhov, V. A.;
Barkov, K. A.;
Arsentyev, I. N.;
Bondarev, A. D.;
Fomin, E. V.;
Pikhtin, N. A.

Publication type:

Article

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1545, doi. 10.1134/S1063782619110101

By:

Levitskii, Ya. V.;
Mitrofanov, M. I.;
Voznyuk, G. V.;
Nikolayev, D. N.;
Mizerov, M. N.;
Evtikhiev, V. P.

Publication type:

Article

On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1540, doi. 10.1134/S1063782619110198

By:

Svit, K. A.;
Zhuravlev, K. S.

Publication type:

Article

Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1535, doi. 10.1134/S1063782619110149

By:

Mintairov, M. A.;
Evstropov, V. V.;
Mintairov, S. A.;
Shvarts, M. Z.;
Kalyuzhnyy, N. A.

Publication type:

Article

High-Voltage AlInGaN LED Chips.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1529, doi. 10.1134/S1063782619110125

By:

Markov, L. K.;
Kukushkin, M. V.;
Pavlyuchenko, A. S.;
Smirnova, I. P.;
Itkinson, G. V.;
Osipov, O. V.

Publication type:

Article

Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1524, doi. 10.1134/S1063782619110113

By:

Lipkova, E. A.;
Efimova, A. I.;
Gonchar, K. A.;
Presnov, D. E.;
Eliseev, A. A.;
Lapshin, A. N.;
Timoshenko, V. Yu.

Publication type:

Article

Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase (= 21.5 mol %).

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1514, doi. 10.1134/S1063782619110228

By:

Undalov, Yu. K.;
Terukov, E. I.;
Trapeznikova, I. N.

Publication type:

Article

Spectra of SmS Films in the Far- and Mid-Infrared Regions.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1511, doi. 10.1134/S1063782619110216

By:

Ulashkevich, Yu. V.;
Kaminski, V. V.;
Soloviev, S. M.;
Sharenkova, N. V.

Publication type:

Article

Structure of Se95As5 Chalcogenide Glassy Semiconductor Doped by EuF3 Impurity.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1507, doi. 10.1134/S1063782619110071

By:

Garibova, S. N.;
Isayev, A. I.;
Mekhtiyeva, S. I.;
Atayeva, S. U.

Publication type:

Article

Structure and Electrical Properties of (ZnO/SiO2)25 Thin Films.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1465, doi. 10.1134/S106378261911023X

By:

Volochaev, M. N.;
Kalinin, Yu. E.;
Kashirin, M. A.;
Makagonov, V. A.;
Pankov, S. Yu.;
Bassarab, V. V.

Publication type:

Article

Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1457, doi. 10.1134/S1063782619110095

By:

Krylov, P. N.;
Alalykin, A. S.;
Durman, E. A.;
Zakirova, R. M.;
Fedotova, I. V.

Publication type:

Article

Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1445, doi. 10.1134/S1063782619110162

By:

Samosvat, D. M.;
Chikalova-Luzina, O. P.;
Zegrya, G. G.

Publication type:

Article

Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd3 –xMnxAs2 Films.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1439, doi. 10.1134/S1063782619110137

By:

Mekhiya, A. B.;
Kazakov, A. A.;
Oveshnikov, L. N.;
Davydov, A. B.;
Ril, A. I.;
Marenkin, S. F.;
Aronzon, B. A.

Publication type:

Article

Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1431, doi. 10.1134/S1063782619110022

By:

Ageeva, N. N.;
Bronevoi, I. L.;
Zabegaev, D. N.;
Krivonosov, A. N.

Publication type:

Article

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1427, doi. 10.1134/S1063782619110046

By:

Cherkova, S. G.;
Skuratov, V. A.;
Volodin, V. A.

Publication type:

Article

Temperature Coefficient of Movement of the Resonance Level of Iron in Pb1 – x – ySnxFeyTe Alloys.

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1419, doi. 10.1134/S1063782619110186

By:

Skipetrov, E. P.;
Kovalev, B. B.;
Skipetrova, L. A.;
Knotko, A. V.;
Slynko, V. E.

Publication type:

Article

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

Published in:

Semiconductors, 2019, v. 53, n. 11, p. 1415, doi. 10.1134/S1063782619110204

By:

Titov, A. I.;
Karabeshkin, K. V.;
Karaseov, P. A.;
Struchkov, A. I.

Publication type:

Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 11

Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System.

On the Anisotropic Trigger Electrical Properties of Two-Dimensional Superlattices.

Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality.

Boson Peak Related to Ga Nanoclusters in AlGaN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy at Ga-Rich Conditions.

Investigation of Composition Uniformity in Thickness of GaInAsP Layers Grown on InP Substrates by Vapor-Phase Epitaxy.

Raman Scattering in AlN Crystals Grown by Sublimation on SiC and AlN Seeds.

On the Phase Composition, Morphology, and Optical and Electronic Characteristics of AlN Nanofilms Grown on Misoriented GaAs(100) Substrates.

Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching.

On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique.

Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells.

High-Voltage AlInGaN LED Chips.

Determination of the Free Charge Carrier Concentration in Boron-Doped Silicon Nanowires Using Attenuated Total Reflection Infrared Spectroscopy.

Formation of ncl-Si in the Amorphous Matrix a-SiO<sub>x</sub>:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH<sub>4</sub>–Ar–O<sub>2</sub>) Gas Phase (= 21.5 mol %).

Spectra of SmS Films in the Far- and Mid-Infrared Regions.

Structure of Se<sub>95</sub>As<sub>5</sub> Chalcogenide Glassy Semiconductor Doped by EuF<sub>3</sub> Impurity.

Structure and Electrical Properties of (ZnO/SiO<sub>2</sub>)<sub>25</sub> Thin Films.

Effect of Ion-Beam Processing during RF Magnetron Sputtering on the properties of ZnO Films.

Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon.

Quantum Corrections and Magnetotransport in 3D Dirac Semimetal Cd<sub>3 –</sub><sub>x</sub>Mn<sub>x</sub>As<sub>2</sub> Films.

Relation between the Relaxation of Intrinsic Stimulated Picosecond Emission from GaAs with a Characteristic Charge-Carrier Cooling Time.

Luminescence Properties of FZ Silicon Irradiated with Swift Heavy Ions.

Temperature Coefficient of Movement of the Resonance Level of Iron in Pb<sub>1 – x</sub> <sub>– y</sub>Sn<sub>x</sub>Fe<sub>y</sub>Te Alloys.

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?