Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 1

Results: 23

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 132, doi. 10.1134/S1063782619010196
By:
- Shvets, V. A.;
- Azarov, I. A.;
- Marin, D. V.;
- Yakushev, M. V.;
- Rykhlitsky, S. V.
Publication type:
Article
Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 127, doi. 10.1134/S1063782619010184
By:
- Shchukin, V. G.;
- Sharafutdinov, R. G.;
- Konstantinov, V. O.
Publication type:
Article
Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 114, doi. 10.1134/S1063782619010147
By:
- Li, G. V.;
- Astrova, E. V.;
- Lihachev, A. I.
Publication type:
Article
Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO2 Interface in a MOS Transistor.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 110, doi. 10.1134/S1063782619010123
By:
- Kulikov, N. A.;
- Popov, V. D.
Publication type:
Article
Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 106, doi. 10.1134/S1063782619010135
By:
- Kuzmichev, N. D.;
- Vasyutin, M. A.
Publication type:
Article
Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 99, doi. 10.1134/S1063782619010032
By:
- Bochkareva, N. I.;
- Ivanov, A. M.;
- Klochkov, A. V.;
- Shreter, Y. G.
Publication type:
Article
Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 60, doi. 10.1134/S1063782619010238
By:
- Tyschenko, I. E.;
- Zhanaev, E. D.;
- Popov, V. P.
Publication type:
Article
Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 96, doi. 10.1134/S1063782619010214
By:
- Svintsov, A. A.;
- Yakimov, E. B.;
- Dorokhin, M. V.;
- Demina, P. B.;
- Kuznetsov, Yu. M.
Publication type:
Article
Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 89, doi. 10.1134/S1063782619010111
By:
- Khrypunov, G. S.;
- Meriuts, A. V.;
- Shelest, T. N.;
- Khrypunov, M. G
Publication type:
Article
A Chainlike Model of the Zigzag Edge Decoration of Graphene.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 78, doi. 10.1134/S1063782619010044
By:
- Davydov, S. Yu.
Publication type:
Article
Investigation into the Memristor Effect in Nanocrystalline ZnO Films.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 72, doi. 10.1134/S1063782619010202
By:
- Smirnov, V. A.;
- Tominov, R. V.;
- Avilov, V. I.;
- Alyabieva, N. I.;
- Vakulov, Z. E.;
- Zamburg, E. G.;
- Khakhulin, D. A.;
- Ageev, O. A.
Publication type:
Article
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 65, doi. 10.1134/S1063782619010172
By:
- Seredin, P. V.;
- Goloshchapov, D. L.;
- Zolotukhin, D. S.;
- Lenshin, A. S.;
- Lukin, A. N.;
- Mizerov, A. M.;
- Nikitina, E. V.;
- Arsentyev, I. N.;
- Leiste, H.;
- Rinke, M.
Publication type:
Article
Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 55, doi. 10.1134/S1063782619010160
By:
- Peshcherova, S. M.;
- Yakimov, E. B.;
- Nepomnyashchikh, A. I.;
- Orlov, V. I.;
- Feklisova, O. V.;
- Pavlova, L. A.;
- Presnyakov, R. V.
Publication type:
Article
On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 85, doi. 10.1134/S1063782619010093
By:
- Goldman, E. I.;
- Nabiev, A.;
- Naryshkina, V. G.;
- Chucheva, G. V.
Publication type:
Article
The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 51, doi. 10.1134/S1063782619010056
By:
- Elistratova, M. A.;
- Zakharova, I. B.;
- Li, G. V.;
- Dubrovin, R. M.;
- Sreseli, O. M.
Publication type:
Article
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 46, doi. 10.1134/S1063782619010159
By:
- Mikhailova, M. P.;
- Ivanov, E. V.;
- Danilov, L. V.;
- Levin, R. V.;
- Andreev, I. A.;
- Kunitsyna, E. V.;
- Yakovlev, Yu. P.
Publication type:
Article
Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 42, doi. 10.1134/S1063782619010081
By:
- Goldman, E. I.;
- Kuharskaya, N. F.;
- Levashov, S. A.;
- Chucheva, G. V.
Publication type:
Article
Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi1 –xSbx)2Te3 Topological Insulators.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 37, doi. 10.1134/S1063782619010068
By:
- Galeeva, A. V.;
- Gomanko, M. A.;
- Tamm, M. E.;
- Yashina, L. V.;
- Danilov, S. N.;
- Ryabova, L. I.;
- Khokhlov, D. R.
Publication type:
Article
Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 28, doi. 10.1134/S1063782619010226
By:
- Torkhov, N. A.
Publication type:
Article
Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 22, doi. 10.1134/S106378261901010X
By:
- Gruzintsev, A. N.;
- Redkin, A. N.
Publication type:
Article
Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 14, doi. 10.1134/S106378261901024X
By:
- Yafarov, R. K.
Publication type:
Article
Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 9, doi. 10.1134/S1063782619010020
By:
- Bannaya, V. F.;
- Nikitina, E. V.
Publication type:
Article
Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals.
Published in:
Semiconductors, 2019, v. 53, n. 1, p. 1, doi. 10.1134/S106378261901007X
By:
- Gladilin, A. A.;
- Ilichev, N. N.;
- Kalinushkin, V. P.;
- Studenikin, M. I.;
- Uvarov, O. V.;
- Chapnin, V. A.;
- Tumorin, V. V.;
- Novikov, G. G.
Publication type:
Article

Works matching IS 10637826 AND DT 2019 AND VI 53 AND IP 1

Ellipsometric Method for Measuring the CdTe Buffer-Layer Temperature in the Molecular-Beam Epitaxy of CdHgTe.

Deposition of Silicon Films Doped with Boron and Phosphorus by the Gas-Jet Plasma-Chemical Method.

Photoanodization of n-Si in the Presence of Hydrogen Peroxide: Voltage Dependence.

Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO<sub>2</sub> Interface in a MOS Transistor.

Differential Equations for Reconstructing the Derived Anhysteretic Nonlinear I–V Characteristics of a Semiconductor Structure.

Current Noise and Efficiency Droop of Light-Emitting Diodes in Defect-Assisted Carrier Tunneling from an InGaN/GaN Quantum Well.

Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.

Simulation of the Parameters of a Titanium-Tritide-Based Beta-Voltaic Cell.

Influence of Annealing in Freon on the Crystalline Structure of Cadmium-Telluride Layers and the Efficiency of Thin-Film Solar Cells on Their Basis.

A Chainlike Model of the Zigzag Edge Decoration of Graphene.

Investigation into the Memristor Effect in Nanocrystalline ZnO Films.

Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial In<sub>x</sub>Ga<sub>1 –</sub><sub>x</sub>N/Si(111) Heterostructures with a Nanocolumnar Film Morphology.

Dependence of the Bulk Electrical Properties of Multisilicon on the Grain Misorientation Parameters.

On the Nature of the Increase in the Electron Mobility in the Inversion Channel at the Silicon–Oxide Interface after the Field Effect.

The Effect of Crystallization Conditions on the Spectral Characteristics of Tetraphenylporphyrin Thin Films.

Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE.

Determination of the Parameters of Metal–Insulator–Semiconductor Structures with Ultrathin Insulating Layer from High-Frequency Capacitance–Voltage Measurements.

Photoelectromagnetic Effect Induced by Terahertz Radiation in (Bi<sub>1 –</sub><sub>x</sub>Sb<sub>x</sub>)<sub>2</sub>Te<sub>3</sub> Topological Insulators.

Sheet Resistance of the TiAlNiAu Thin-Film Metallization of Ohmic Contacts to Nitride Semiconductor Structures.

Nonresonance Phase Conjugation of Light at the Surface of GaN Films Upon High-Power Optical Pumping.

Effect of Plasma-Chemical Surface Modification on the Electron Transport and Work Function in Silicon Crystals.

Influence of a Quantum Magnetic Field on the Heating of Charge Carriers in Pure Germanium.

Study of the Effect of Doping with Iron on the Luminescence of Zinc-Selenide Single Crystals.