Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 9

Results: 23

GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1215, doi. 10.1134/S1063782618090099

By:

Kunitsyna, E. V.;
Andreev, I. A.;
Konovalov, G. G.;
Ivanov, E. V.;
Pivovarova, A. A.;
Il’inskaya, N. D.;
Yakovlev, Yu. P.

Publication type:

Article

Intercalation of C60 Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1198, doi. 10.1134/S1063782618090130

By:

Rut’kov, E. V.;
Gall, N. R.

Publication type:

Article

Effect of Injection Depletion in p-Si-n-(Si2)1 -x(ZnSe)x (0 ≤ x ≤ 0.01) Heterostructure.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1188, doi. 10.1134/S1063782618090142

By:

Saidov, A. S.;
Leyderman, A. Yu.;
Usmonov, Sh. N.;
Amonov, K. A.

Publication type:

Article

Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization).

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1145, doi. 10.1134/S106378261809004X

By:

Ivanov, K. A.;
Gubaydullin, A. R.;
Kaliteevski, M. A.

Publication type:

Article

Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1221, doi. 10.1134/S1063782618090038

By:

Dubinov, A. A.;
Aleshkin, V. Ya.;
Morozov, S. V.

Publication type:

Article

Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1225, doi. 10.1134/S1063782618090026

By:

Anisimov, A. N.;
Wolfson, A. A.;
Mokhov, E. N.

Publication type:

Article

Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1193, doi. 10.1134/S106378261809021X

By:

Teplyakov, M. P.;
Ken, O. S.;
Goryachev, D. N.;
Sreseli, O. M.

Publication type:

Article

Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1137, doi. 10.1134/S1063782618090087

By:

Kondratenko, T. S.;
Smirnov, M. S.;
Ovchinnikov, O. V.;
Shabunya-Klyachkovskaya, E. V.;
Matsukovich, A. S.;
Zvyagin, A. I.;
Vinokur, Y. A.

Publication type:

Article

Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1203, doi. 10.1134/S1063782618090063

By:

Klochko, N. P.;
Kopach, V. R.;
Khrypunov, G. S.;
Korsun, V. E.;
Lyubov, V. M.;
Zhadan, D. O.;
Otchenashko, A. N.;
Kirichenko, M. V.;
Khrypunov, M. G.

Publication type:

Article

On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO2 Films.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1178, doi. 10.1134/S1063782618090233

By:

Volodin, V. A.;
Rui, Zhang;
Krivyakin, G. K.;
Antonenko, A. Kh.;
Stoffel, M.;
Rinnert, H.;
Vergnat, M.

Publication type:

Article

Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 -xZnxTe Heterojunctions.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1171, doi. 10.1134/S1063782618090117

By:

Orletskyi, I. G.;
Ilashchuk, M. I.;
Solovan, M. N.;
Maryanchuk, P. D.;
Parfenyuk, O. A.;
Maistruk, E. V.;
Nichyi, S. V.

Publication type:

Article

On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1156, doi. 10.1134/S1063782618090075

By:

Kolodeznyi, E. S.;
Kurochkin, A. S.;
Rochas, S. S.;
Babichev, A. V.;
Novikov, I. I.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Savelyev, A. V.;
Egorov, A. Yu.;
Denisov, D. V.

Publication type:

Article

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1163, doi. 10.1134/S1063782618090154

By:

Seredin, P. V.;
Lenshin, A. S.;
Fedyukin, A. V.;
Goloshchapov, D. L.;
Lukin, A. N.;
Arsentyev, I. N.;
Zhabotinsky, A. V.

Publication type:

Article

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1118, doi. 10.1134/S106378261809018X

By:

Sitnikov, A. V.;
Zhilova, O. V.;
Babkina, I. V.;
Makagonov, V. A.;
Kalinin, Yu. E.;
Remizova, O. I.

Publication type:

Article

Low-Frequency Dielectric Relaxation in Iron-Doped Ge28.5Pb15S56.5 Glassy System.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1160, doi. 10.1134/S1063782618090051

By:

Castro, R. A.;
Grabko, G. I.;
Kononov, A. A.

Publication type:

Article

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1150, doi. 10.1134/S1063782618090191

By:

Smagina, Zh. V.;
Zinovyev, V. A.;
Krivyakin, G. K.;
Rodyakina, E. E.;
Kuchinskaya, P. A.;
Fomin, B. I.;
Yablonskiy, A. N.;
Stepikhova, M. V.;
Novikov, A. V.;
Dvurechenskii, A. V.

Publication type:

Article

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1129, doi. 10.1134/S1063782618090129

By:

Orlov, M. L.;
Volkova, N. S.;
Ivina, N. L.;
Orlov, L. K.

Publication type:

Article

Template Synthesis of Monodisperse Spherical Nanocomposite SiO2/GaN:Eu3+ Particles.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1123, doi. 10.1134/S1063782618090208

By:

Stovpiaga, E. Yu.;
Eurov, D. A.;
Kurdyukov, D. A.;
Smirnov, A. N.;
Yagovkina, M. A.;
Yakovlev, D. R.;
Golubev, V. G.

Publication type:

Article

Poole-Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1114, doi. 10.1134/S1063782618090166

By:

Shiryaev, A. A.;
Vorotyntsev, V. M.;
Shobolov, E. L.

Publication type:

Article

Superficial Defect Formation in CdTe under the Radiation Effect of a CO2 Laser.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1110, doi. 10.1134/S1063782618090178

By:

Shkumbatjuk, P. S.

Publication type:

Article

Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1104, doi. 10.1134/S1063782618090245

By:

Yafarov, R. K.

Publication type:

Article

Optical Properties and the Mechanism of the Formation of V2O2 and V3O2 Vacancy-Oxygen Complexes in Irradiated Silicon Crystals.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1097, doi. 10.1134/S1063782618090221

By:

Tolkacheva, E. A.;
Markevich, V. P.;
Murin, L. I.

Publication type:

Article

Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1091, doi. 10.1134/S1063782618090105

By:

Okulich, E. V.;
Okulich, V. I.;
Tetelbaum, D. I.

Publication type:

Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 9

GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range.

Intercalation of C<sub>60</sub> Fullerene Molecules under Single-Layer Graphene on Molybdenum Carbide.

Effect of Injection Depletion in p-Si-n-(Si<sub>2</sub>)<sub>1 -</sub><sub>x</sub>(ZnSe)<sub>x</sub> (0 ≤ x ≤ 0.01) Heterostructure.

Quantization of the Electromagnetic Field in Three-Dimensional Photonic Structures on the Basis of the Scattering Matrix Formalism (S Quantization).

Lowering the Lasing Threshold by Doping in Mid-Infrared Lasers Based on HgCdTe with HgTe Quantum Wells.

Raman Spectra of Thick Epitaxial GaN Layers Formed on SiC by the Sublimation Sandwich Method.

Transport and Photosensitivity in Structures: A Composite Layer of Silicon and Gold Nanoparticles on p-Si.

Size-Dependent Optical Properties of Colloidal CdS Quantum Dots Passivated by Thioglycolic Acid.

Backward-Diode Heterostructure Based on a Zinc-Oxide Nanoarray Formed by Pulsed Electrodeposition and a Cooper-Iodide Film Grown by the SILAR Method.

On the Formation of IR-Light-Emitting Ge Nanocrystals in Ge:SiO<sub>2</sub> Films.

Electrical Properties and Energy Parameters of n-FeS<sub>2</sub>/p-Cd<sub>1 -</sub><sub>x</sub>Zn<sub>x</sub>Te Heterojunctions.

On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures.

Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide.

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films.

Low-Frequency Dielectric Relaxation in Iron-Doped Ge<sub>28.5</sub>Pb<sub>15</sub>S<sub>56.5</sub> Glassy System.

Study of the Structural and Emission Properties of Ge(Si) Quantum Dots Ordered on the Si(001) Surface.

Electric-Field Behavior of the Resonance Features of the Tunneling Photocurrent Component in InAs(QD)/GaAs Heterostructures.

Template Synthesis of Monodisperse Spherical Nanocomposite SiO<sub>2</sub>/GaN:Eu<sup>3+</sup> Particles.

Poole-Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide.

Superficial Defect Formation in CdTe under the Radiation Effect of a CO<sub>2</sub> Laser.

Effect of High-Dose Carbon Implantation on the Phase Composition, Morphology, and Field-Emission Properties of Silicon Crystals.

Optical Properties and the Mechanism of the Formation of V<sub>2</sub>O<sub>2</sub> and V<sub>3</sub>O<sub>2</sub> Vacancy-Oxygen Complexes in Irradiated Silicon Crystals.

Calculation of the Influence of the Ion Current Density and Temperature on the Accumulation Kinetics of Point Defects under the Irradiation of Si with Light Ions.