Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 8
Results: 25
Crystal Structure and Band Gap of (MnIn<sub>2</sub>S<sub>4</sub>)<sub>1-x</sub> • (AgIn<sub>5</sub>S<sub>8</sub>)<sub>x</sub> Alloys.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1086, doi. 10.1134/S1063782618080043
- By:
- Publication type:
- Article
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1082, doi. 10.1134/S1063782618080031
- By:
- Publication type:
- Article
On the Fabrication of Graphene p-n Junctions and Their Application for Detecting Terahertz Radiation.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1077, doi. 10.1134/S1063782618080225
- By:
- Publication type:
- Article
Effect of Deep Centers on the Statistical Delay of Microplasma Breakdown in Gallium-Arsenide Light-Emitting Diodes.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1072, doi. 10.1134/S1063782618080080
- By:
- Publication type:
- Article
Modulation of the Charge of Germanium MIS Structures with Fluorine-Containing Insulators.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1068, doi. 10.1134/S1063782618080201
- By:
- Publication type:
- Article
Degradation of the Photoluminescence of ZnTPP and ZnTPP-C<sub>60</sub> Thin Films under Gamma Irradiation.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1061, doi. 10.1134/S1063782618080183
- By:
- Publication type:
- Article
On the Application of Silicate Glasses with CdS<sub>x</sub>Se<sub>1-x</sub> Semiconductor Nanocrystals as Optical Thermometers and Optical Filters with a Controlled Absorption Edge.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1056, doi. 10.1134/S1063782618080158
- By:
- Publication type:
- Article
Dynamics of Changes in the Photoluminescence of Porous Silicon after Gamma Irradiation.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1051, doi. 10.1134/S1063782618080067
- By:
- Publication type:
- Article
Magnetic Properties of Vacancies and Doped Chromium in a ZnO Crystal.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1047, doi. 10.1134/S1063782618080055
- By:
- Publication type:
- Article
Dielectric Relaxation in Thin Layers of the Ge<sub>28.5</sub>Pb<sub>15</sub>S<sub>56.5</sub> Glassy System.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1043, doi. 10.1134/S1063782618080092
- By:
- Publication type:
- Article
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1037, doi. 10.1134/S1063782618080146
- By:
- Publication type:
- Article
Simulating Tunneling Electron Transport in the Semiconductor-Crystalline Insulator-Si(111) System.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1031, doi. 10.1134/S1063782618080249
- By:
- Publication type:
- Article
Influence of Isotropic Pressure on the Current-Voltage Characteristics of Surface-Barrier Diodes Sb-p-Si〈Mn〉-Au.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1027, doi. 10.1134/S1063782618080262
- By:
- Publication type:
- Article
Photoluminescence of ZnS:Cu in a Polymethyl Methacrylate Matrix.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1022, doi. 10.1134/S1063782618080213
- By:
- Publication type:
- Article
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1012, doi. 10.1134/S1063782618080195
- By:
- Publication type:
- Article
Specific Features of the Electrochemical Capacitance-Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 1004, doi. 10.1134/S1063782618080250
- By:
- Publication type:
- Article
Nonlinear Optical Properties of CdS/ZnS Quantum Dots in a High-Molecular-Weight Polyvinylpyrrolidone Matrix.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 997, doi. 10.1134/S1063782618080110
- By:
- Publication type:
- Article
Effect of the Ag Nanoparticle Concentration in TiO<sub>2</sub>-Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 993, doi. 10.1134/S1063782618080122
- By:
- Publication type:
- Article
On Recombination Processes in CdS-PbS Films.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 986, doi. 10.1134/S1063782618080171
- By:
- Publication type:
- Article
Microwave Magnetoabsorption Oscillations in Fe-Doped HgSe Crystals.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 980, doi. 10.1134/S1063782618080237
- By:
- Publication type:
- Article
Optical Absorption of Copper-Activated Zinc-Sulfide Polycrystalline Layers.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 977, doi. 10.1134/S106378261808002X
- By:
- Publication type:
- Article
Electronic Processes in CdIn<sub>2</sub>Te<sub>4</sub> Crystals.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 973, doi. 10.1134/S1063782618080079
- By:
- Publication type:
- Article
Features of <sup>63,65</sup>Cu NMR Spectra in the Local Field of Samples of CuFeS<sub>2</sub> Semiconductor Mineral from Oceanic Sulfide Deposits.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 969, doi. 10.1134/S1063782618080134
- By:
- Publication type:
- Article
Formation of Precipitates in Si Implanted with <sup>64</sup>Zn<sup>+</sup> and <sup>16</sup>O<sup>+</sup> Ions.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 961, doi. 10.1134/S106378261808016X
- By:
- Publication type:
- Article
Solid-Phase Reactions and Phase Transformations in a Nanoscale Bismuth/Selenium Film Structure.
- Published in:
- Semiconductors, 2018, v. 52, n. 8, p. 957, doi. 10.1134/S1063782618080109
- By:
- Publication type:
- Article