Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 7

Results: 25

Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 954, doi. 10.1134/S1063782618070151
By:
- Mitrofanov, M. I.;
- Levitskii, I. V.;
- Voznyuk, G. V.;
- Tatarinov, E. E.;
- Rodin, S. N.;
- Kaliteevski, M. A.;
- Evtikhiev, V. P.
Publication type:
Article
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 950, doi. 10.1134/S106378261807014X
By:
- Mamutin, V. V.;
- Vasilyev, A. P.;
- Lyutetskiy, A. V.;
- Ilyinskaya, N. D.;
- Zadiranov, Yu. M.;
- Sofronov, A. N.;
- Firsov, D. A.;
- Vorobjev, L. E.;
- Maleev, N. A.;
- Ustinov, V. M.
Publication type:
Article
Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 942, doi. 10.1134/S1063782618070072
By:
- Emtsev, V. V.;
- Gushchina, E. V.;
- Petrov, V. N.;
- Tal’nishnih, N. A.;
- Chernyakov, A. E.;
- Shabunina, E. I.;
- Shmidt, N. M.;
- Usikov, A. S.;
- Kartashova, A. P.;
- Zybin, A. A.;
- Kozlovski, V. V.;
- Kudoyarov, M. F.;
- Saharov, A. V.;
- Oganesyan, A. G.;
- Poloskin, D. S.;
- Lundin, V. V.
Publication type:
Article
Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 934, doi. 10.1134/S1063782618070035
By:
- Bochkareva, N. I.;
- Shreter, Y. G.
Publication type:
Article
Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 931, doi. 10.1134/S1063782618070230
By:
- Terukov, E. I.;
- Abramov, A. S.;
- Andronikov, D. A.;
- Emtsev, K. V.;
- Panaiotti, I. E.;
- Titov, A. S.;
- Shelopin, G. G.
Publication type:
Article
Study of Deep Levels in a HIT Solar Cell.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 926, doi. 10.1134/S1063782618070254
By:
- Vikhrov, S. P.;
- Vishnyakov, N. V.;
- Gudzev, V. V.;
- Ermachikhin, A. V.;
- Shilina, D. V.;
- Litvinov, V. G.;
- Maslov, A. D.;
- Mishustin, V. G.;
- Terukov, E. I.;
- Titov, A. S.
Publication type:
Article
Effect of Electron-Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 921, doi. 10.1134/S1063782618070047
By:
- Davydov, S. Yu.
Publication type:
Article
Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 914, doi. 10.1134/S1063782618070266
By:
- Vinogradov, A. Ya.;
- Grudinkin, S. A.;
- Besedina, N. A.;
- Koniakhin, S. V.;
- Rabchinskii, M. K.;
- Eidelman, E. D.;
- Golubev, V. G.
Publication type:
Article
Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 907, doi. 10.1134/S1063782618070102
By:
- Ivanenko, I. P.;
- Krasnoshchekov, S. V.;
- Pavlikov, A. V.
Publication type:
Article
Modification of Photoconductivity Spectra in ZnO-CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 902, doi. 10.1134/S1063782618070059
By:
- Drozdov, K. A.;
- Krylov, I. V.;
- Chizhov, A. S.;
- Rumyantseva, M. N.;
- Ryabova, L. I.;
- Khokhlov, D. R.
Publication type:
Article
Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 897, doi. 10.1134/S1063782618070126
By:
- Kurbanov, S. S.;
- Urolov, Sh. Z.;
- Shaymardanov, Z. Sh.;
- Cho, H. D.;
- Kang, T. W.
Publication type:
Article
Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 891, doi. 10.1134/S1063782618070242
By:
- Tregulov, V. V.;
- Litvinov, V. G.;
- Ermachikhin, A. V.
Publication type:
Article
Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223-293 K.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 885, doi. 10.1134/S1063782618070114
By:
- Kozyukhin, S. A.;
- Bedin, S. A.;
- Rudakovskaya, P. G.;
- Ivanova, O. S.;
- Ivanov, V. K.
Publication type:
Article
Photoelectric Properties of ZnO Threadlike Crystals.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 881, doi. 10.1134/S1063782618070205
By:
- Shkumbatjuk, P. S.
Publication type:
Article
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 877, doi. 10.1134/S1063782618070187
By:
- Pozina, G.;
- Kaliteevski, M. A.;
- Nikitina, E. V.;
- Gubaidullin, A. R.;
- Ivanov, K. A.;
- Egorov, A. Yu.
Publication type:
Article
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 870, doi. 10.1134/S1063782618070199
By:
- Salii, R. A.;
- Kosarev, I. S.;
- Mintairov, S. A.;
- Nadtochiy, A. M.;
- Shvarts, M. Z.;
- Kalyuzhnyy, N. A.
Publication type:
Article
Ultrafast Dynamics of Photoexcited Charge Carriers in In0.53Ga0.47As/In0.52Al0.48As Superlattices under Femtosecond Laser Excitation.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 864, doi. 10.1134/S1063782618070175
By:
- Ponomarev, D. S.;
- Khabibullin, R. A.;
- Klochkov, A. N.;
- Yachmenev, A. E.;
- Bugaev, A. S.;
- Khusyainov, D. I.;
- Buriakov, A. M.;
- Bilyk, V. P.;
- Mishina, E. D.
Publication type:
Article
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 859, doi. 10.1134/S1063782618070163
By:
- Parkhomenko, H. P.;
- Solovan, M. N.;
- Maryanchuk, P. D.
Publication type:
Article
Transverse Nernst-Ettingshausen Effect in Superlattices Upon Electron-Phonon Scattering.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 853, doi. 10.1134/S1063782618070084
By:
- Figarova, S. R.;
- Huseynov, H. I.;
- Figarov, V. R.
Publication type:
Article
Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 849, doi. 10.1134/S1063782618070023
By:
- Avakyants, L. P.;
- Bokov, P. Yu.;
- Kazakov, I. P.;
- Bazalevsky, M. A.;
- Deev, P. M.;
- Chervyakov, A. V.
Publication type:
Article
Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si+ Ion Implantation.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 843, doi. 10.1134/S1063782618070229
By:
- Tereshchenko, A. N.;
- Korolev, D. S.;
- Mikhaylov, A. N.;
- Belov, A. I.;
- Nikolskaya, A. A.;
- Pavlov, D. A.;
- Tetelbaum, D. I.;
- Steinman, E. A.
Publication type:
Article
Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 840, doi. 10.1134/S1063782618070060
By:
- Jahangirli, Z. A.;
- Hashimzade, F. M.;
- Huseynova, D. A.;
- Mehdiyev, B. G.;
- Mustafaev, N. B.
Publication type:
Article
Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 836, doi. 10.1134/S1063782618070096
By:
- Ishchenko, D. V.;
- Neizvestny, I. G.
Publication type:
Article
Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb1-x-ySnxVyTe Alloys upon Doping.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 828, doi. 10.1134/S1063782618070217
By:
- Skipetrov, E. P.;
- Konstantinov, N. S.;
- Skipetrova, L. A.;
- Knotko, A. V.;
- Slynko, V. E.
Publication type:
Article
Matrix Calculation of the Spectral Characteristics of AII-BVI Semiconductors Doped with Iron-Group Ions.
Published in:
Semiconductors, 2018, v. 52, n. 7, p. 821, doi. 10.1134/S1063782618070138
By:
- Kurchatov, I. S.;
- Kustov, E. F.
Publication type:
Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 7

Concentric Hexagonal GaN Structures for Nanophotonics, Fabricated by Selective Vapor-Phase Epitaxy with Ion-Beam Etching.

On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers.

Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System.

Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency.

Investigation of the Characteristics of Heterojunction Solar Cells Based on Thin Single-Crystal Silicon Wafers.

Study of Deep Levels in a HIT Solar Cell.

Effect of Electron-Phonon Interaction on the Conductivity and Work Function of Epitaxial Graphene.

Structure and Properties of Thin Graphite-Like Films Produced by Magnetron-Assisted Sputtering.

Analysis of the Structure and Conductivity of Kinked Carbon Chains Obtained by Pulsed Plasma Deposition on Various Metal Substrates.

Modification of Photoconductivity Spectra in ZnO-CdSe Quantum- Dot Composites upon Exposure to Additional Photoexcitation.

Photoluminescence Properties of ZnO Nanorods Synthesized by Different Methods.

Study of Current Flow Mechanisms in a CdS/por-Si/p-Si Heterostructure.

Dielectric Properties of Nanocrystalline Tungsten Oxide in the Temperature Range of 223-293 K.

Photoelectric Properties of ZnO Threadlike Crystals.

Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells.

In<sub>0.8</sub>Ga<sub>0.2</sub>As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties.

Ultrafast Dynamics of Photoexcited Charge Carriers in In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As Superlattices under Femtosecond Laser Excitation.

Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon.

Transverse Nernst-Ettingshausen Effect in Superlattices Upon Electron-Phonon Scattering.

Photoreflectance Spectroscopy Study of LT-GaAs Layers Grown on Si and GaAs Substrates.

Effect of Boron Impurity on the Light-Emitting Properties of Dislocation Structures Formed in Silicon by Si<sup>+</sup> Ion Implantation.

Photothreshold of an α-GeS Layered Crystal: First-Principles Calculation.

Radiative Recombination, Carrier Capture at Traps, and Photocurrent Relaxation in PbSnTe:In with a Composition Close to Band Inversion.

Kinetics of the Variation in the Magnetic Impurity Ion Concentration in Pb<sub>1-x-y</sub>Sn<sub>x</sub>V<sub>y</sub>Te Alloys upon Doping.

Matrix Calculation of the Spectral Characteristics of AII-BVI Semiconductors Doped with Iron-Group Ions.