Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 6

Results: 24

Variation in the Conductivity of Polyaniline Nanotubes During Their Formation.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 816, doi. 10.1134/S1063782618060076

By:

Kapralova, V. M.;
Sapurina, I. Yu.;
Sudar’, N. T.

Publication type:

Article

Laser-Induced Modification of the Surface of Ge2Sb2Te5 Thin Films: Phase Changes and Periodic-Structure Formation.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 809, doi. 10.1134/S1063782618060246

By:

Yakovlev, S. A.;
Ankudinov, A. V.;
Vorobyov, Yu. V.;
Voronov, M. M.;
Kozyukhin, S. A.;
Melekh, B. T.;
Pevtsov, A. B.

Publication type:

Article

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 802, doi. 10.1134/S1063782618060118

By:

Kalinkin, I. P.;
Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Study of the Properties of II-VI and III-V Semiconductor Quantum Dots.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 750, doi. 10.1134/S1063782618060155

By:

Mikhailov, A. I.;
Kabanov, V. F.;
Gorbachev, I. A.;
Glukhovsky, E. G.

Publication type:

Article

Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 776, doi. 10.1134/S1063782618060131

By:

Maiboroda, I. O.;
Grishchenko, J. V.;
Ezubchenko, I. S.;
Sokolov, I. S.;
Chernych, I. A.;
Andreev, A. A.;
Zanaveskin, M. L.

Publication type:

Article

On the Possibility of the Propagation of Solitary Electromagnetic Waves in Bigraphene.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 766, doi. 10.1134/S1063782618060106

By:

Kukhar, E. I.;
Kryuchkov, S. V.;
Ionkina, E. S.

Publication type:

Article

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 789, doi. 10.1134/S1063782618060143

By:

Malin, T. V.;
Milakhin, D. S.;
Mansurov, V. G.;
Galitsyn, Yu. G.;
Kozhuhov, A. S.;
Ratnikov, V. V.;
Smirnov, A. N.;
Davydov, V. Yu.;
Zhuravlev, K. S.

Publication type:

Article

Properties of Lead-Sulfide Nanoparticles in a Multicrystalline Structure.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 755, doi. 10.1134/S1063782618060258

By:

Zhukov, N. D.;
Rokakh, A. G.;
Shishkin, M. I.

Publication type:

Article

Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 797, doi. 10.1134/S1063782618060064

By:

Ivanova, M. M.;
Kachemtsev, A. N.;
Mikhaylov, A. N.;
Filatov, D. O.;
Gorshkov, A. P.;
Volkova, N. S.;
Chalkov, V. Yu.;
Shengurov, V. G.

Publication type:

Article

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 692, doi. 10.1134/S1063782618060192

By:

Poklonski, N. A.;
Vyrko, S. A.;
Dzeraviaha, A. N.

Publication type:

Article

Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 783, doi. 10.1134/S1063782618060027

By:

Aleksandrov, O. V.;
Mokrushina, S. A.

Publication type:

Article

High-Sensitivity Photodetector Based on Atomically Thin MoS2.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 771, doi. 10.1134/S106378261806012X

By:

Lavrov, S. D.;
Shestakova, A. P.;
Mishina, E. D.;
Efimenkov, Yu. R.;
Sigov, A. S.

Publication type:

Article

Quantum Oscillations of Photoconductivity Relaxation in p-i-n GaAs/InAs/AlAs Heterodiodes.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 739, doi. 10.1134/S1063782618060088

By:

Khanin, Yu. N.;
Vdovin, E. E.

Publication type:

Article

X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al0.32Ga0.68N HEMT-Heterostructures by the Williamson-Hall Method.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 734, doi. 10.1134/S1063782618060209

By:

Pushkarev, S. S.;
Grekhov, M. M.;
Zenchenko, N. V.

Publication type:

Article

Effect of the Dehydrogenation of Graphane on Its Mechanical and Electronic Properties.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 760, doi. 10.1134/S1063782618060179

By:

Openov, L. A.;
Podlivaev, A. I.

Publication type:

Article

Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 729, doi. 10.1134/S1063782618060180

By:

Pashchenko, A. S.;
Lunin, L. S.;
Chebotarev, S. N.;
Lunina, M. L.

Publication type:

Article

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg1 - xCdxTe Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 702, doi. 10.1134/S1063782618060052

By:

Evstigneev, V. S.;
Varavin, V. S.;
Chilyasov, A. V.;
Remesnik, V. G.;
Moiseev, A. N.;
Stepanov, B. S.

Publication type:

Article

Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 745, doi. 10.1134/S1063782618060039

By:

Babichev, A. V.;
Kurochkin, A. S.;
Kolodeznyi, E. C.;
Filimonov, A. V.;
Usikova, A. A.;
Nevedomsky, V. N.;
Gladyshev, A. G.;
Karachinsky, L. Ya.;
Novikov, I. I.;
Egorov, A. Yu.

Publication type:

Article

Optical Properties of Multilayered Sol-Gel Zinc-Oxide Films.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 723, doi. 10.1134/S1063782618060040

By:

Denisov, N. M.;
Chubenko, E. B.;
Bondarenko, V. P.;
Borisenko, V. E.

Publication type:

Article

Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 717, doi. 10.1134/S1063782618060234

By:

Volodin, V. A.;
Sachkov, V. A.;
Sinyukov, M. P.

Publication type:

Article

Rb1 - xCsxNO3 (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 713, doi. 10.1134/S106378261806009X

By:

Haziyeva, A. F.;
Nasirov, V. I.;
Asadov, Y. G.;
Aliyev, Y. I.;
Jabarov, S. H.

Publication type:

Article

On the Structure of the Mössbauer Spectra of 119mSn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of 119mTe/119Sb Isotopes.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 708, doi. 10.1134/S1063782618060222

By:

Terukov, E. I.;
Marchenko, A. V.;
Seregin, P. P.;
Zhukov, N. N.

Publication type:

Article

Contribution of Iron Clusters to the Magnetic Properties of Pb1 - yFeyTe Alloys.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 686, doi. 10.1134/S1063782618060210

By:

Skipetrov, E. P.;
Solovev, A. A.;
Slynko, V. E.

Publication type:

Article

AC Electrical Conductivity of FeIn2Se4 Single Crystals.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 683, doi. 10.1134/S1063782618060167

By:

Niftiyev, N. N.;
Mammadov, F. M.;
Quseynov, V. I.;
Kurbanov, S. Sh.

Publication type:

Article

Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 6

Variation in the Conductivity of Polyaniline Nanotubes During Their Formation.

Laser-Induced Modification of the Surface of Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub> Thin Films: Phase Changes and Periodic-Structure Formation.

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Epitaxial Films Synthesized by Atom Substitution.

Study of the Properties of II-VI and III-V Semiconductor Quantum Dots.

Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal.

On the Possibility of the Propagation of Solitary Electromagnetic Waves in Bigraphene.

Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers.

Properties of Lead-Sulfide Nanoparticles in a Multicrystalline Structure.

Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers.

Quasi-Classical Model of the Static Electrical Conductivity of Heavily Doped Degenerate Semiconductors at Low Temperatures.

Model for Charge Accumulation in n- and p-MOS Transistors during Tunneling Electron Injection from a Gate.

High-Sensitivity Photodetector Based on Atomically Thin MoS<sub>2</sub>.

Quantum Oscillations of Photoconductivity Relaxation in p-i-n GaAs/InAs/AlAs Heterodiodes.

X-Ray Diffraction Analysis of Features of the Crystal Structure of GaN/Al<sub>0.32</sub>Ga<sub>0.68</sub>N HEMT-Heterostructures by the Williamson-Hall Method.

Effect of the Dehydrogenation of Graphane on Its Mechanical and Electronic Properties.

Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers.

Electrophysical Properties of p-Type Undoped and Arsenic-Doped Hg<sub>1 - x</sub>Cd<sub>x</sub>Te Epitaxial Layers with x ≈ 0.4 Grown by the MOCVD Method.

Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers.

Optical Properties of Multilayered Sol-Gel Zinc-Oxide Films.

Forbidden Resonant Raman Scattering in GaAs/AlAs Superlattices: Experiment and Calculations.

Rb<sub>1 - x</sub>Cs<sub>x</sub>NO<sub>3</sub> (x = 0.025, 0.05, 0.1) Single Crystals and Their High-Temperature X-Ray Study.

On the Structure of the Mössbauer Spectra of <sup>119m</sup>Sn Impurity Atoms in Lead Chalcogenides under Conditions of the Radioactive Equilibrium of <sup>119m</sup>Te/<sup>119</sup>Sb Isotopes.

Contribution of Iron Clusters to the Magnetic Properties of Pb<sub>1 - y</sub>Fe<sub>y</sub>Te Alloys.

AC Electrical Conductivity of FeIn<sub>2</sub>Se<sub>4</sub> Single Crystals.