Works matching IS 10637826 AND DT 2018 AND VI 52 AND IP 5
Results: 35
Air-Oxidation of Nb Nano-Films.
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- Semiconductors, 2018, v. 52, n. 5, p. 678, doi. 10.1134/S1063782618050196
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Dip-Pen Nanolithography Method for Fabrication of Biofunctionalized Magnetic Nanodiscs Applied in Medicine.
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- Semiconductors, 2018, v. 52, n. 5, p. 675, doi. 10.1134/S1063782618050305
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Resistance Switching in Ag, Au, and Cu Films at the Percolation Threshold.
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- Semiconductors, 2018, v. 52, n. 5, p. 671, doi. 10.1134/S1063782618050093
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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on μ-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE.
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- Semiconductors, 2018, v. 52, n. 5, p. 667, doi. 10.1134/S1063782618050123
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Kinetics of Structural Changes on GaSb(001) Singular and Vicinal Surfaces During the UHV Annealing.
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- Semiconductors, 2018, v. 52, n. 5, p. 664, doi. 10.1134/S1063782618050354
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Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy.
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- Semiconductors, 2018, v. 52, n. 5, p. 660, doi. 10.1134/S1063782618050342
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Effect of Epitaxial Alignment on Electron Transport from Quasi-Two-Dimensional Iron Silicide α-FeSi<sub>2</sub> Nanocrystals Into <italic>p</italic>-Si(001).
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- Semiconductors, 2018, v. 52, n. 5, p. 654, doi. 10.1134/S1063782618050330
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MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In on Si and Strongly Mismatched SiC/Si(111) Substrates.
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- Semiconductors, 2018, v. 52, n. 5, p. 651, doi. 10.1134/S1063782618050251
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Nanoparticle Formation in Zn<sup>+</sup> and O<sup>+</sup> Ion Sequentially Implanted SiO<sub>2</sub> Film.
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- Semiconductors, 2018, v. 52, n. 5, p. 645, doi. 10.1134/S106378261805024X
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Сoncentric GaAs Nanorings Growth Modelling.
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- Semiconductors, 2018, v. 52, n. 5, p. 639, doi. 10.1134/S1063782618050226
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Alternative Technology for Creating Nanostructures Using Dip Pen Nanolithography.
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- Semiconductors, 2018, v. 52, n. 5, p. 636, doi. 10.1134/S1063782618050202
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Fabrication of Silicon Nanostructures for Application in Photonics.
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- Semiconductors, 2018, v. 52, n. 5, p. 632, doi. 10.1134/S1063782618050135
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New Method of Porous Ge Layer Fabrication: Structure and Optical Properties.
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- Semiconductors, 2018, v. 52, n. 5, p. 628, doi. 10.1134/S1063782618050111
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Ion Synthesis: Si-Ge Quantum Dots.
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- Semiconductors, 2018, v. 52, n. 5, p. 625, doi. 10.1134/S1063782618050081
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Metal-Semiconductor Nanoheterostructures with an AlGaN Quantum Well and In Situ Formed Surface Al Nanoislands.
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- Semiconductors, 2018, v. 52, n. 5, p. 622, doi. 10.1134/S1063782618050056
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Thermal Smoothing and Roughening of GaAs Surfaces: Experiment and Monte Carlo Simulation.
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- Semiconductors, 2018, v. 52, n. 5, p. 618, doi. 10.1134/S1063782618050147
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Molecular Beam Epitaxy of Materials Interfaces with Atomic Precision.
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- Semiconductors, 2018, v. 52, n. 5, p. 615, doi. 10.1134/S1063782618050238
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Dielectric Properties of Oligonucleotides on the Surface of Si Nanosandwich Structures.
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- Semiconductors, 2018, v. 52, n. 5, p. 612, doi. 10.1134/S106378261805007X
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GaAs Wurtzite Nanowires for Hybrid Piezoelectric Solar Cells.
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- Semiconductors, 2018, v. 52, n. 5, p. 609, doi. 10.1134/S1063782618050020
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The Features of GaAs Nanowire SEM Images.
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- Semiconductors, 2018, v. 52, n. 5, p. 605, doi. 10.1134/S1063782618050317
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Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate.
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- Semiconductors, 2018, v. 52, n. 5, p. 602, doi. 10.1134/S1063782618050299
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TiN Nanoporous Electrode Covered by Single Cell as Bio-Electronic Sensor of Radiation Hazard.
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- Semiconductors, 2018, v. 52, n. 5, p. 600, doi. 10.1134/S1063782618050329
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Geometry Optimization and Charge Density Distribution of Single Layer of ZN-Based Metal-Organic Framework.
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- Semiconductors, 2018, v. 52, n. 5, p. 597, doi. 10.1134/S1063782618050287
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Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer.
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- Semiconductors, 2018, v. 52, n. 5, p. 593, doi. 10.1134/S1063782618050214
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Ballistic Hole Emission Spectroscopy of Self-Assembled GeSi/Si(001) Nanoislands.
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- Semiconductors, 2018, v. 52, n. 5, p. 590, doi. 10.1134/S1063782618050068
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Luminescence Decay of Colloidal Quantum Dots and Stretched Exponential (Kohlrausch) Relaxation Function.
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- Semiconductors, 2018, v. 52, n. 5, p. 587, doi. 10.1134/S1063782618050044
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Polymer Composition Influence on Optical Properties of Laser-Generated Au Nanoparticles Based Nanocomposites.
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- Semiconductors, 2018, v. 52, n. 5, p. 583, doi. 10.1134/S1063782618050366
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Plasmon-Excitonic Polaritons in Metal-Semiconductor Nanostructures with Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 5, p. 579, doi. 10.1134/S1063782618050159
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Long-Lived Magnetoexcitons and Two-Dimensional Magnetofermionic Condensate in GaAs/AlGaAs Heterostructure.
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- Semiconductors, 2018, v. 52, n. 5, p. 575, doi. 10.1134/S1063782618050160
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Dangling Bond Spins Controlling Recombination Dynamics of Excitons in Colloidal Nanocrystals and Nanoplatelets.
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- Semiconductors, 2018, v. 52, n. 5, p. 572, doi. 10.1134/S1063782618050263
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The Impact of the Substrate Material on the Optical Properties of 2D WSe<sub>2</sub> Monolayers.
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- Semiconductors, 2018, v. 52, n. 5, p. 565, doi. 10.1134/S1063782618050275
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Effect of Transverse Electric Field on Polariton Reflectance Spectra of Wide Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 5, p. 562, doi. 10.1134/S1063782618050184
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Spectroscopy of PbS and PbSe Quantum Dots in Fluorine Phosphate Glasses.
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- Semiconductors, 2018, v. 52, n. 5, p. 558, doi. 10.1134/S1063782618050172
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Biexciton Binding Energy in Spherical Quantum Dots with Γ<sub>8</sub> Valence Band.
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- Semiconductors, 2018, v. 52, n. 5, p. 554, doi. 10.1134/S106378261805010X
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Calculation of Energy States of Excitons in Square Quantum Wells.
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- Semiconductors, 2018, v. 52, n. 5, p. 551, doi. 10.1134/S1063782618050032
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